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Results: 1-17 |
Results: 17
Gallium nitride based transistors
Authors: Xing, H Keller, S Wu, YF McCarthy, L Smorchkova, IP Buttari, D Coffie, R Green, DS Parish, G Heikman, S Shen, L Zhang, N Xu, JJ Keller, BP DenBaars, SP Mishra, UK
Citation: H. Xing et al., Gallium nitride based transistors, J PHYS-COND, 13(32), 2001, pp. 7139-7157
Current instabilities in GaN-based devices
Authors: Daumiller, I Theron, D Gaquiere, C Vescan, A Dietrich, R Wieszt, A Leier, H Vetury, R Mishra, UK Smorchkova, IP Keller, S Nguyen, NX Nguyen, C Kohn, E
Citation: I. Daumiller et al., Current instabilities in GaN-based devices, IEEE ELEC D, 22(2), 2001, pp. 62-64
AlGaN/AlN/GaN high-power microwave HEMT
Authors: Shen, L Heikman, S Moran, B Coffie, R Zhang, NQ Buttari, D Smorchkova, IP Keller, S DenBaars, SP Mishra, UK
Citation: L. Shen et al., AlGaN/AlN/GaN high-power microwave HEMT, IEEE ELEC D, 22(10), 2001, pp. 457-459
AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grownby plasma-assisted molecular-beam epitaxy
Authors: Smorchkova, IP Chen, L Mates, T Shen, L Heikman, S Moran, B Keller, S DenBaars, SP Speck, JS Mishra, UK
Citation: Ip. Smorchkova et al., AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grownby plasma-assisted molecular-beam epitaxy, J APPL PHYS, 90(10), 2001, pp. 5196-5201
GaNHBT: Toward an RF device
Authors: McCarthy, LS Smorchkova, IP Xing, HL Kozodoy, P Fini, P Limb, J Pulfrey, DL Speck, JS Rodwell, MJW DenBaars, SP Mishra, UK
Citation: Ls. Mccarthy et al., GaNHBT: Toward an RF device, IEEE DEVICE, 48(3), 2001, pp. 543-551
Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Smorchkova, IP Ben, HY Haus, E Poblenz, C Fini, P Maranowski, K Petroff, PM DenBaars, SP Mishra, UK Speck, JS Saxler, A Elhamri, S Mitchel, WC
Citation: Cr. Elsass et al., Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, JPN J A P 2, 39(10B), 2000, pp. L1023-L1025
Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure
Authors: Elhamri, S Saxler, A Mitchel, WC Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: S. Elhamri et al., Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure, J APPL PHYS, 88(11), 2000, pp. 6583-6588
Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies
Authors: Zhang, YF Smorchkova, IP Elsass, CR Keller, S Ibbetson, JP Denbaars, S Mishra, UK Singh, J
Citation: Yf. Zhang et al., Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies, J APPL PHYS, 87(11), 2000, pp. 7981-7987
Characterization of an AlGaN/GaN two-dimensional electron gas structure
Authors: Saxler, A Debray, P Perrin, R Elhamri, S Mitchel, WC Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: A. Saxler et al., Characterization of an AlGaN/GaN two-dimensional electron gas structure, J APPL PHYS, 87(1), 2000, pp. 369-374
Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers
Authors: Smorchkova, IP Keller, S Heikman, S Elsass, CR Heying, B Fini, P Speck, JS Mishra, UK
Citation: Ip. Smorchkova et al., Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers, APPL PHYS L, 77(24), 2000, pp. 3998-4000
Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
Authors: Smorchkova, IP Haus, E Heying, B Kozodoy, P Fini, P Ibbetson, JP Keller, S DenBaars, SP Speck, JS Mishra, UK
Citation: Ip. Smorchkova et al., Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy, APPL PHYS L, 76(6), 2000, pp. 718-720
Fabrication and characterization of a two-dimensional electron gas in modulation doped ZnTe/Cd1-xMnxSe quantum wells
Authors: Knobel, R Smorchkova, IP Samarth, N
Citation: R. Knobel et al., Fabrication and characterization of a two-dimensional electron gas in modulation doped ZnTe/Cd1-xMnxSe quantum wells, J VAC SCI B, 17(3), 1999, pp. 1147-1150
Persistent photoconductivity in II-VI magnetic two-dimensional electron gases
Authors: Ray, O Smorchkova, IP Samarth, N
Citation: O. Ray et al., Persistent photoconductivity in II-VI magnetic two-dimensional electron gases, PHYS REV B, 59(15), 1999, pp. 9810-9813
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
Authors: Smorchkova, IP Elsass, CR Ibbetson, JP Vetury, R Heying, B Fini, P Haus, E DenBaars, SP Speck, JS Mishra, UK
Citation: Ip. Smorchkova et al., Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy, J APPL PHYS, 86(8), 1999, pp. 4520-4526
Optical signatures from magnetic two-dimensional electron gases in magnetic fields to 60 T
Authors: Crooker, SA Rickel, DG Smorchkova, IP Samarth, N Kikkawa, JM Awschalom, DD
Citation: Sa. Crooker et al., Optical signatures from magnetic two-dimensional electron gases in magnetic fields to 60 T, J APPL PHYS, 85(8), 1999, pp. 5932-5934
Cyclotron resonance in modulation-doped ZnSe/Zn1-xCdxSe and ZnTe/CdSe single quantum wells
Authors: Ng, HK Leem, YA Knobel, R Smorchkova, IP Sirenko, AA Samarth, N
Citation: Hk. Ng et al., Cyclotron resonance in modulation-doped ZnSe/Zn1-xCdxSe and ZnTe/CdSe single quantum wells, APPL PHYS L, 75(23), 1999, pp. 3662-3664
High mobility two-dimensional electron gas in AlGaN GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Maranowski, K Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: Cr. Elsass et al., High mobility two-dimensional electron gas in AlGaN GaN heterostructures grown by plasma-assisted molecular beam epitaxy, APPL PHYS L, 74(23), 1999, pp. 3528-3530
Risultati: 1-17 |