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Results: 1-10 |
Results: 10
Terahertz electromagnetic wave generation from quantum nanostructure
Authors: Morohashi, I Komori, K Hidaka, T Sugaya, T Wang, XL Ogura, M Nakagawa, T Son, CS
Citation: I. Morohashi et al., Terahertz electromagnetic wave generation from quantum nanostructure, JPN J A P 1, 40(4B), 2001, pp. 3012-3017
Fabrication of AlGaAs-GaAs quantum-wire gain-coupled DFB lasers by a single MOCVD growth step
Authors: Kim, TG Son, CS Ogura, M
Citation: Tg. Kim et al., Fabrication of AlGaAs-GaAs quantum-wire gain-coupled DFB lasers by a single MOCVD growth step, IEEE PHOTON, 13(5), 2001, pp. 409-411
Constant growth of V-groove AlGaAs/GaAs multilayers on submicron gratings for complex optical devices
Authors: Son, CS Kim, TG Wang, XL Ogura, M
Citation: Cs. Son et al., Constant growth of V-groove AlGaAs/GaAs multilayers on submicron gratings for complex optical devices, J CRYST GR, 221, 2000, pp. 201-207
Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy
Authors: Kim, JW Son, CS Choi, IH Park, YK Kim, YT Ambacher, O Stutzmann, M
Citation: Jw. Kim et al., Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy, J CRYST GR, 208(1-4), 2000, pp. 37-41
Atypical pulmonary artery sling with diffuse-type pulmonary arteriovenous fistula
Authors: Huh, J Choi, JY Kim, YW Noh, CI Yun, YS Son, CS Tockgo, YC
Citation: J. Huh et al., Atypical pulmonary artery sling with diffuse-type pulmonary arteriovenous fistula, J KOR MED S, 14(1), 1999, pp. 80-84
Characterization of the absorption edges of epitaxial AlGaN grown by plasma-induced molecular beam epitaxy
Authors: Kim, JW Son, CS Choi, IH Park, YK Kim, YT Ambacher, O Stutzmann, M
Citation: Jw. Kim et al., Characterization of the absorption edges of epitaxial AlGaN grown by plasma-induced molecular beam epitaxy, J KOR PHYS, 35, 1999, pp. S279-S282
Transmission spectra of InGaN single quantum wells and InGaN GaN heterostructures grown by metalorganic chemical vapor deposition
Authors: Kim, JW Park, YK Kim, YT Son, CS Choi, IH Ambacher, O Stutzmann, M
Citation: Jw. Kim et al., Transmission spectra of InGaN single quantum wells and InGaN GaN heterostructures grown by metalorganic chemical vapor deposition, J KOR PHYS, 35(1), 1999, pp. 42-45
Etching effect of carbon tetrabromide in the vertical growth of GaAs during metalorganic chemical vapor deposition
Authors: Park, YK Kim, SI Son, CS
Citation: Yk. Park et al., Etching effect of carbon tetrabromide in the vertical growth of GaAs during metalorganic chemical vapor deposition, J KOR PHYS, 34, 1999, pp. S432-S434
GaAs AlGaAs buried channel stripe lasers fabricated by a single-stage selective epitaxial growth technique
Authors: Kim, TG Son, CS Kim, EK Min, SK Park, JH
Citation: Tg. Kim et al., GaAs AlGaAs buried channel stripe lasers fabricated by a single-stage selective epitaxial growth technique, SEMIC SCI T, 14(6), 1999, pp. 570-574
GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates
Authors: Kim, EK Kim, TG Son, CS Hwang, SM Kim, Y Park, YK Min, SK
Citation: Ek. Kim et al., GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates, J KOR PHYS, 33, 1998, pp. S338-S341
Risultati: 1-10 |