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Results: 1-16 |
Results: 16
Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy
Authors: Sanchez, AM Pacheco, FJ Molina, SI Stemmer, J Aderhold, J Graul, J
Citation: Am. Sanchez et al., Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy, MAT SCI E B, 80(1-3), 2001, pp. 299-303
Critical thickness of high-temperature AlN interlayers in GaN on sapphire (0001)
Authors: Sanchez, AM Pacheco, FJ Molina, SI Stemmer, J Aderhold, J Graul, J
Citation: Am. Sanchez et al., Critical thickness of high-temperature AlN interlayers in GaN on sapphire (0001), J ELEC MAT, 30(5), 2001, pp. L17-L20
Study of MBE-grown GaN/AlGaN quantum well structures by two wavelength excited photoluminescence
Authors: Ocampo, JMZ Klausing, H Semchinova, O Stemmer, J Hirasawa, M Kamata, N Yamada, K
Citation: Jmz. Ocampo et al., Study of MBE-grown GaN/AlGaN quantum well structures by two wavelength excited photoluminescence, PHYS ST S-A, 183(1), 2001, pp. 189-195
Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres
Authors: Mistele, D Fedler, F Klausing, H Rotter, T Stemmer, J Semchinova, OK Aderhold, J
Citation: D. Mistele et al., Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres, J CRYST GR, 230(3-4), 2001, pp. 564-568
Electrical properties of photoanodically generated thin oxide films on n-GaN
Authors: Rotter, T Ferretti, R Mistele, D Fedler, F Klausing, H Stemmer, J Semchinova, OK Aderhold, J Graul, J
Citation: T. Rotter et al., Electrical properties of photoanodically generated thin oxide films on n-GaN, J CRYST GR, 230(3-4), 2001, pp. 602-606
InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates
Authors: Aderhold, J Davydov, VY Fedler, F Klausing, H Mistele, D Rotter, T Semchinova, O Stemmer, J Graul, J
Citation: J. Aderhold et al., InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates, J CRYST GR, 222(4), 2001, pp. 701-705
First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide
Authors: Rotter, T Mistele, D Stemmer, J Seyboth, M Schwegler, V Paprotta, S Fedler, F Klausing, H Semchinova, OK Aderhold, J Graul, J
Citation: T. Rotter et al., First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide, ELECTR LETT, 37(11), 2001, pp. 715-716
Electron beam pumping in nitride vertical cavities with GaN/Al0.25Ga0.75N Bragg reflectors
Authors: Klausing, H Aderhold, J Fedler, F Mistele, D Stemmer, J Semchinova, O Graul, J Danhardt, J Panzer, S
Citation: H. Klausing et al., Electron beam pumping in nitride vertical cavities with GaN/Al0.25Ga0.75N Bragg reflectors, MRS I J N S, 5, 2000, pp. NIL_562-NIL_567
Point defects in gamma-irradiated n-GaN
Authors: Emtsev, VV Davydov, VY Kozlovskii, VV Lundin, VV Poloskin, DS Smirnov, AN Shmidt, NM Usikov, AS Aderhold, J Klausing, H Mistele, D Rotter, T Stemmer, J Semchinova, O Graul, J
Citation: Vv. Emtsev et al., Point defects in gamma-irradiated n-GaN, SEMIC SCI T, 15(1), 2000, pp. 73-78
Statistical Ga clusters and A(1)(TO) gap mode in AlxGa1-xN alloys
Authors: Klochikhin, AA Davydov, VY Goncharuk, IN Smirnov, AN Nikolaev, AE Baidakova, MV Aderhold, J Graul, J Stemmer, J Semchinova, O
Citation: Aa. Klochikhin et al., Statistical Ga clusters and A(1)(TO) gap mode in AlxGa1-xN alloys, PHYS REV B, 62(4), 2000, pp. 2522-2535
High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy
Authors: Stemmer, J Fedler, F Klausing, H Mistele, D Rotter, T Semchinova, O Aderhold, J Sanchez, AM Pacheco, FJ Molina, SI Fehrer, M Hommel, D Graul, J
Citation: J. Stemmer et al., High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy, J CRYST GR, 216(1-4), 2000, pp. 15-20
Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films
Authors: Emtsev, VV Davydov, VY Lundin, VV Poloskin, DS Aderhold, J Klausing, H Mistele, D Rotter, T Stemmer, J Fedler, F Semchinova, O Graul, J
Citation: Vv. Emtsev et al., Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films, J CRYST GR, 210(1-3), 2000, pp. 273-277
Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions
Authors: Rotter, T Mistele, D Stemmer, J Fedler, F Aderhold, J Graul, J Schwegler, V Kirchner, C Kamp, M Heuken, M
Citation: T. Rotter et al., Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions, APPL PHYS L, 76(26), 2000, pp. 3923-3925
Raman spectroscopy of disorder effects in AlxGa1-xN solid solutions
Authors: Davydov, VY Goncharuk, IN Baidakova, MV Smirnov, AN Subashiev, AV Aderhold, J Stemmer, J Rotter, T Uffmann, D Semchinova, O
Citation: Vy. Davydov et al., Raman spectroscopy of disorder effects in AlxGa1-xN solid solutions, MAT SCI E B, 59(1-3), 1999, pp. 222-225
Smooth GaN surfaces by photoinduced electro-chemical etching
Authors: Rotter, T Aderhold, J Mistele, D Semchinova, O Stemmer, J Uffmann, D Graul, J
Citation: T. Rotter et al., Smooth GaN surfaces by photoinduced electro-chemical etching, MAT SCI E B, 59(1-3), 1999, pp. 350-354
Influence of pre-etching on specific contact parameters for metal-GaN contacts
Authors: Mistele, D Adertold, J Klausing, H Rotter, T Semchinova, O Stemmer, J Uffmann, D Graul, J Eberhard, F Mayer, M Schauler, M Kamp, M Ahrens, C
Citation: D. Mistele et al., Influence of pre-etching on specific contact parameters for metal-GaN contacts, SEMIC SCI T, 14(7), 1999, pp. 637-641
Risultati: 1-16 |