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Results: 1-14 |
Results: 14
Simultaneous doping of silicon layers with erbium and oxygen in the courseof molecular-beam epitaxy
Authors: Shengurov, VG Svetlov, SP Chalkov, VY Maksimov, GA Krasil'nik, ZF Andreev, BA Stepikhova, MV Shengurov, DV Palmetshofer, L Ellmer, H
Citation: Vg. Shengurov et al., Simultaneous doping of silicon layers with erbium and oxygen in the courseof molecular-beam epitaxy, SEMICONDUCT, 35(8), 2001, pp. 918-923
Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
Authors: Cerqueira, HF Stepikhova, MV Ferreira, JA
Citation: Hf. Cerqueira et al., Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering, MAT SCI E B, 81(1-3), 2001, pp. 32-35
Determination of electrically active impurities in light emitting Si : Er/Si structures grown with sublimation molecular beam epitaxy
Authors: Shmagin, VB Andreev, BA Antonov, AV Krasil'nik, ZF Stepikhova, MV Kuznetsov, VP Uskova, EA Kuznetsov, OA Rubtsova, RA
Citation: Vb. Shmagin et al., Determination of electrically active impurities in light emitting Si : Er/Si structures grown with sublimation molecular beam epitaxy, IAN FIZ, 65(2), 2001, pp. 276-279
The kinetics of Er related electroluminescence in single crystal tunnelinglight emitting diodes based on (111)-oriented silicon
Authors: Shengurov, VG Svetlov, SP Chalkov, VY Maksimov, GA Krasil'nik, ZF Andreev, BA Stepikhova, MV Palmetshofer, L Ellmer, H
Citation: Vg. Shengurov et al., The kinetics of Er related electroluminescence in single crystal tunnelinglight emitting diodes based on (111)-oriented silicon, IAN FIZ, 65(2), 2001, pp. 285-288
Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy
Authors: Shengurov, VG Svetlov, SP Chalkov, VY Maksimov, GA Krasil'nik, ZF Andreev, BA Stepikhova, MV Palmetshofer, L Ellmer, H
Citation: Vg. Shengurov et al., Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy, IAN FIZ, 65(2), 2001, pp. 289-291
Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method (vol 369, pg 320, 2000)
Authors: Stepikhova, MV Andreev, BA Shmagin, VB Krasil'nik, ZF Kuznetsov, VP Shengurov, VG Svetlov, SP Jantsch, W Palmetshofer, L Ellmer, H
Citation: Mv. Stepikhova et al., Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method (vol 369, pg 320, 2000), THIN SOL FI, 381(1), 2001, pp. 164-169
Doping of silicon layers from a sublimating erbium source in molecular beam epitaxy
Authors: Svetlov, SP Chalkov, VY Shengurov, VG Uskova, EA Maksimov, GA Andreev, BA Krasil'nik, ZF Stepikhova, MV Ellmer, H
Citation: Sp. Svetlov et al., Doping of silicon layers from a sublimating erbium source in molecular beam epitaxy, TECH PHYS L, 26(1), 2000, pp. 41-43
Optically active Er-related centers in Si : Er epitaxial layers grown by the sublimation MBE method
Authors: Andreev, BA Andreev, AY Gaponova, DM Krasil'nik, ZF Kuznetsov, VP Novikov, AV Stepikhova, MV Uskova, EA Shmagin, VB Lanzerstorfer, S
Citation: Ba. Andreev et al., Optically active Er-related centers in Si : Er epitaxial layers grown by the sublimation MBE method, IAN FIZ, 64(2), 2000, pp. 269-272
Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method
Authors: Stepikhova, MV Andreev, BA Shmagin, VB Krasil'nik, ZF Kuznetsov, VP Shengurov, VG Svetlov, SP Jantsch, W Palmetshofer, L Ellmer, H
Citation: Mv. Stepikhova et al., Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method, THIN SOL FI, 369(1-2), 2000, pp. 426-430
Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy
Authors: Andreev, AY Andreev, BA Drozdov, MN Krasil'nik, ZF Stepikhova, MV Shmagin, VB Kuznetsov, VP Rubtsova, RA Uskova, EA Karpov, YA Ellmer, H Palmetshofer, L Piplits, K Hutter, H
Citation: Ay. Andreev et al., Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy, SEMICONDUCT, 33(2), 1999, pp. 131-134
Photoluminescence enhancement of nanostructured system "silicon in SiO2" by ion doping with phosphorus
Authors: Tetelbaum, DI Gorshkov, ON Trushin, SA Stepikhova, MV
Citation: Di. Tetelbaum et al., Photoluminescence enhancement of nanostructured system "silicon in SiO2" by ion doping with phosphorus, IAN FIZ, 63(2), 1999, pp. 348-351
Electrical and optical properties of silicon, doped by erbium during sublimational molecular beam epitaxy
Authors: Andreev, AY Andreev, BA Drozdov, MN Ellmer, H Kuznetsov, VP Kalugin, NG Krasilnic, ZF Karpov, YA Palmetshofer, L Piplits, K Rubtsova, RA Stepikhova, MV Uskova, EA Shmagin, VB Hutter, H
Citation: Ay. Andreev et al., Electrical and optical properties of silicon, doped by erbium during sublimational molecular beam epitaxy, IAN FIZ, 63(2), 1999, pp. 392-399
Er-related photoluminescence in porous silicon. Optically active erbium centers
Authors: Stepikhova, MV Jantsch, W Palmetshofer, L von Bardeleben, J
Citation: Mv. Stepikhova et al., Er-related photoluminescence in porous silicon. Optically active erbium centers, IAN FIZ, 63(2), 1999, pp. 400-405
Optical Er-doping of Si during sublimational molecular beam epitaxy
Authors: Andreev, BA Andreev, AY Ellmer, H Hutter, H Krasil'nik, ZF Kuznetsov, VP Lanzerstorfer, S Palmetshofer, L Piplits, K Rubtsova, RA Sokolov, NS Shmagin, VB Stepikhova, MV Uskova, EA
Citation: Ba. Andreev et al., Optical Er-doping of Si during sublimational molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 534-537
Risultati: 1-14 |