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Results: 1-12 |
Results: 12
Domain structure and electrical properties of highly textured PbZrxTi1-xO3thin films grown on LaNiO3-electrode-buffered Si by metalorganic chemical vapor deposition
Authors: Lin, CH Yen, BM Kuo, HC Chen, HD Wu, TB Stillman, GE
Citation: Ch. Lin et al., Domain structure and electrical properties of highly textured PbZrxTi1-xO3thin films grown on LaNiO3-electrode-buffered Si by metalorganic chemical vapor deposition, J MATER RES, 15(1), 2000, pp. 115-124
Be diffusion in InGaAs/InP heterojunction bipolar transistors
Authors: Bahl, SR Moll, N Robbins, VM Kuo, HC Moser, BG Stillman, GE
Citation: Sr. Bahl et al., Be diffusion in InGaAs/InP heterojunction bipolar transistors, IEEE ELEC D, 21(7), 2000, pp. 332-334
Optimization of emitter cap growth conditions for InGaP/GaAs HBTs with high current gain by LP-MOCVD
Authors: Yang, Q Scott, D Chung, T Stillman, GE
Citation: Q. Yang et al., Optimization of emitter cap growth conditions for InGaP/GaAs HBTs with high current gain by LP-MOCVD, J ELEC MAT, 29(1), 2000, pp. 75-79
188GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs
Authors: Tang, Z Hsia, H Kuo, HC Caruth, D Stillman, GE Feng, M
Citation: Z. Tang et al., 188GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs, ELECTR LETT, 36(19), 2000, pp. 1657-1659
Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition
Authors: Yang, Q Scott, DS Chung, T Stillman, GE
Citation: Q. Yang et al., Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition, APPL PHYS L, 77(2), 2000, pp. 271-273
Growth of high performance InGaAs InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxy
Authors: Kuo, HC Moser, BG Hsia, H Tang, Z Feng, M Stillman, GE Lin, CH Chen, H
Citation: Hc. Kuo et al., Growth of high performance InGaAs InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxy, J VAC SCI B, 17(3), 1999, pp. 1139-1143
Growth of carbon doping Ga0.47In0.53As using CBr4 by gas source molecular beam epitaxy for InP InGaAs heterojunction bipolar transistor applications
Authors: Kuo, HC Ahmari, D Moser, BG Mu, J Hattendorf, M Scott, D Meyer, R Feng, M Stillman, GE
Citation: Hc. Kuo et al., Growth of carbon doping Ga0.47In0.53As using CBr4 by gas source molecular beam epitaxy for InP InGaAs heterojunction bipolar transistor applications, J VAC SCI B, 17(3), 1999, pp. 1185-1189
Activation of silicon ion-implanted gallium nitride by furnace annealing
Authors: Dupuis, RD Eiting, CJ Grudowski, PA Hsia, H Tang, Z Becher, D Kuo, H Stillman, GE Feng, M
Citation: Rd. Dupuis et al., Activation of silicon ion-implanted gallium nitride by furnace annealing, J ELEC MAT, 28(3), 1999, pp. 319-324
Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior
Authors: Ahmari, DA Raghavan, G Hartmann, QJ Hattendorf, ML Feng, M Stillman, GE
Citation: Da. Ahmari et al., Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior, IEEE DEVICE, 46(4), 1999, pp. 634-640
Heterointerface quality of InGaP-GaAs superlattices determined by photopumping, x-ray analysis, and transmission electron microscopy
Authors: Yang, Q Kellogg, DA Lin, C Stillman, GE Holonyak, N
Citation: Q. Yang et al., Heterointerface quality of InGaP-GaAs superlattices determined by photopumping, x-ray analysis, and transmission electron microscopy, APPL PHYS L, 75(8), 1999, pp. 1101-1103
Precipitate formation in carbon-doped base of InGaP GaAs heterojunction bipolar transistors grown by low-pressure metal organic chemical vapor deposition
Authors: Yang, Q Scott, D Miller, J Meyer, P Kuo, HC Baker, JE Stillman, GE
Citation: Q. Yang et al., Precipitate formation in carbon-doped base of InGaP GaAs heterojunction bipolar transistors grown by low-pressure metal organic chemical vapor deposition, APPL PHYS L, 74(20), 1999, pp. 2993-2995
Activation studies of low-dose Si implants in gallium nitride
Authors: Eiting, CJ Grudowski, PA Dupuis, RD Hsia, H Tang, Z Becher, D Kuo, H Stillman, GE Feng, M
Citation: Cj. Eiting et al., Activation studies of low-dose Si implants in gallium nitride, APPL PHYS L, 73(26), 1998, pp. 3875-3877
Risultati: 1-12 |