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Results: 26-50/96
Authors:
Trautmann, T
Krbetschek, MR
Dietrich, A
Stolz, W
Citation: T. Trautmann et al., The basic principle of radioluminescence dating and a localized transitionmodel, RADIAT MEAS, 32(5-6), 2000, pp. 487-492
Authors:
Krbetschek, MR
Trautmann, T
Dietrich, A
Stolz, W
Citation: Mr. Krbetschek et al., Radioluminescence dating of sediments: methodological aspects, RADIAT MEAS, 32(5-6), 2000, pp. 493-498
Authors:
Kuhn, R
Trautmann, T
Singhvi, AK
Krbetschek, MR
Wagner, GA
Stolz, W
Citation: R. Kuhn et al., A study of thermoluminescence emission spectra and optical stimulation spectra of quartz from different provenances, RADIAT MEAS, 32(5-6), 2000, pp. 653-657
Authors:
Trautmann, T
Krbetschek, MR
Stolz, W
Citation: T. Trautmann et al., A systematic study of the radioluminescence properties of single feldspar grains, RADIAT MEAS, 32(5-6), 2000, pp. 685-690
Authors:
Erfurt, G
Krbetschek, MR
Trautmann, T
Stolz, W
Citation: G. Erfurt et al., Radioluminescence (RL) behaviour of Al2O3 : C-potential for dosimetric applications, RADIAT MEAS, 32(5-6), 2000, pp. 735-739
Authors:
Agert, C
Lanyi, P
Sulima, OV
Stolz, W
Bett, AW
Citation: C. Agert et al., Growth of antimony-based materials in a multiwafer planetary MOVPE-reactor, IEE P-OPTO, 147(3), 2000, pp. 188-192
Authors:
Giannini, C
Baumbach, T
Lubbert, D
Felici, R
Tapfer, L
Marschner, T
Stolz, W
Jin-Phillipp, NY
Phillipp, F
Citation: C. Giannini et al., Strain-driven transition from stepped interfaces to regularly spaced macrosteps in (GaIn)As/Ga(PAs) symmetrically strained superlattices, PHYS REV B, 61(3), 2000, pp. 2173-2179
Authors:
Giannini, C
Carlino, E
Tapfer, L
Hohnsdorf, F
Koch, J
Stolz, W
Citation: C. Giannini et al., Structural properties of (GaIn)(AsN)/GaAs MQW structures grown by MOVPE, MRS I J N S, 5, 2000, pp. NIL_222-NIL_227
Authors:
Klar, PJ
Vicente, PMA
Gruning, H
Heimbrodt, W
Koch, J
Hohnsdorf, F
Stolz, W
Camassel, J
Citation: Pj. Klar et al., Nitrogen-induced band formation in GaNxAs1-x studied by photoluminescence under hydrostatic pressure and photomodulated reflectance, HIGH PR RES, 18(1-6), 2000, pp. 29-34
Authors:
Finger, E
Kraft, S
Euteneuer, A
Hofmann, M
Stolz, W
Ruhle, WW
Citation: E. Finger et al., Coherent excitation spectroscopy of disordered quantum-well structures, PHYS ST S-B, 221(1), 2000, pp. 373-378
Authors:
Hetzler, J
Brunner, A
Wegener, M
Leu, S
Nau, S
Stolz, W
Citation: J. Hetzler et al., 100 fs carrier dynamics in GaAs under 100 nm diameter apertures, PHYS ST S-B, 221(1), 2000, pp. 425-428
Authors:
Wagner, A
Ellmers, C
Hohnsdorf, F
Koch, J
Leu, S
Stolz, W
Hofmann, M
Ruhle, WW
Citation: A. Wagner et al., Emission dynamics and gain of (GaIn)(NAs)/GaAs lasers, PHYS ST S-B, 221(1), 2000, pp. 567-569
Authors:
Bernatz, G
Nau, S
Rettig, R
Stolz, W
Citation: G. Bernatz et al., Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphology, J ELEC MAT, 29(1), 2000, pp. 129-133
Authors:
Koch, J
Hohnsdorf, F
Stolz, W
Citation: J. Koch et al., Optical characterization of (GaIn)(NAs)/GaAs MQW structures, J ELEC MAT, 29(1), 2000, pp. 165-168
Authors:
Hasse, A
Volz, K
Schaper, AK
Koch, J
Hohnsdorf, F
Stolz, W
Citation: A. Hasse et al., TEM investigations of (GaIn)(NAs)/GaAs multi-quantum wells grown by MOVPE, CRYST RES T, 35(6-7), 2000, pp. 787-792
Authors:
Gruss, C
Zillikens, D
Hashimoto, T
Amagai, M
Kroiss, M
Vogt, T
Landthaler, M
Stolz, W
Citation: C. Gruss et al., Rapid response of IgA pemphigus of subcorneal pustular dermatosis type to treatment with isotretinoin, J AM ACAD D, 43(5), 2000, pp. 923-926
Authors:
Schiffner, R
Schiffner-Rohe, J
Vogt, T
Landthaler, M
Wlotzke, U
Cognetta, AB
Stolz, W
Citation: R. Schiffner et al., Improvement of early recognition of lentigo maligna using dermatoscopy, J AM ACAD D, 42(1), 2000, pp. 25-32
Authors:
Weiser, S
Meier, T
Mobius, J
Euteneuer, A
Mayer, EJ
Stolz, W
Hofmann, M
Ruhle, WW
Thomas, P
Koch, SW
Citation: S. Weiser et al., Disorder-induced dephasing in semiconductors, PHYS REV B, 61(19), 2000, pp. 13088-13098
Authors:
Schiffner, R
Glassl, A
Landthaler, M
Stolz, W
Citation: R. Schiffner et al., Tolerance of desirudin in a patient with generalized eczema after intravenous challenge with heparin and a delayed-type skin reaction to high and lowmolecular weight heparins and heparinoids, CONTACT DER, 42(1), 2000, pp. 49-49
Authors:
Hartmann, T
Lampalzer, M
Stolz, W
Megges, K
Lorberth, J
Klar, PJ
Heimbrodt, W
Citation: T. Hartmann et al., Optical characterisation of MOVPE-grown Ga1-xMnxAs semimagnetic semiconductor layers, THIN SOL FI, 364(1-2), 2000, pp. 209-212
Authors:
Hofmann, M
Karaiskaj, D
Ellmers, C
Maxisch, T
Jahnke, F
Kolbe, HJ
Weiser, G
Rettig, R
Leu, S
Stolz, W
Koch, SW
Ruhle, WW
Citation: M. Hofmann et al., Normal-mode linewidths in a semiconductor microcavity with various cavity qualities, PHYS ST S-A, 178(1), 2000, pp. 179-181
Authors:
Euteneuer, A
Finger, E
Stolz, W
Meier, T
Thomas, P
Koch, SW
Hofmann, M
Ruhle, WW
Hey, R
Ploog, KH
Citation: A. Euteneuer et al., Investigation of disordered semiconductor quantum wells by coherent excitation spectroscopy, PHYS ST S-A, 178(1), 2000, pp. 183-188
Authors:
Golub, JE
Eichmann, R
Strasser, G
Bernatz, G
Nau, S
Stolz, W
Thomas, P
Citation: Je. Golub et al., Observations of interaction-assisted hopping transport in GaAs/Gal(1-x)Al(x)As quantum wells, J LUMINESC, 91(1-2), 2000, pp. 7-12
Authors:
Bosserhoff, AK
Hauschild, A
Hein, R
Schadendorf, D
Stockfleth, E
Bogenrieder, T
Landthaler, M
Buettner, R
Stolz, W
Citation: Ak. Bosserhoff et al., Elevated MIA serum levels are of relevance for management of metastasized malignant melanomas: Results of a German multicenter study, J INVES DER, 114(2), 2000, pp. 395-396
Authors:
Baeumler, M
Stibal, R
Stolz, W
Steinegger, T
Jurisch, M
Maier, M
Jantz, W
Citation: M. Baeumler et al., Quantitative topographic assessment of Cu incorporation in GaAs, J CRYST GR, 210(1-3), 2000, pp. 207-211