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Citation: Ad. Hanser et al., Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy, MAT SC S PR, 3(3), 2000, pp. 163-171
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Citation: G. Salviati et al., Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire, MRS I J N S, 5, 2000, pp. NIL_647-NIL_654
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Citation: Og. Schmidt et al., Reduced critical thickness and photoluminescence line splitting in multiple layers of self-assembled Ge/Si islands, MAT SCI E B, 74(1-3), 2000, pp. 248-252
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Citation: M. Cazayous et al., Resonant Raman scattering by acoustical phonons in Ge/Si self-assembled quantum dots: Interferences and ordering effects, PHYS REV B, 62(11), 2000, pp. 7243-7248
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Citation: T. Sidiki et al., Optical and structural characterization of Si/SiGe heterostructures grown by RTCVD, THIN SOL FI, 369(1-2), 2000, pp. 431-435