AAAAAA

   
Results: 1-25 | 26-34
Results: 1-25/34
Vacancy formation energy of silicon determined by a new quenching method
Authors: Fukata, N Kasuya, A Suezawa, M
Citation: N. Fukata et al., Vacancy formation energy of silicon determined by a new quenching method, JPN J A P 2, 40(8B), 2001, pp. L854-L856
Early stages of oxygen clustering in hydrogenated Cz-Si: IR absorption studies
Authors: Murin, LI Markevich, VP Suezawa, M Lindstrom, JL Kleverman, M Hallberg, T
Citation: Li. Murin et al., Early stages of oxygen clustering in hydrogenated Cz-Si: IR absorption studies, PHYSICA B, 302, 2001, pp. 180-187
Optical absorption spectra of Be-H and Zn-H complexes in Si
Authors: Mori, R Fukata, N Suezawa, M Kasuya, A
Citation: R. Mori et al., Optical absorption spectra of Be-H and Zn-H complexes in Si, PHYSICA B, 302, 2001, pp. 206-211
Magnetic resonance studies of shallow donor centers in hydrogenated Cz-Si crystals
Authors: Langhanki, B Greulich-Weber, S Spaeth, JM Markevich, VP Murin, LI Mchedlidze, T Suezawa, M
Citation: B. Langhanki et al., Magnetic resonance studies of shallow donor centers in hydrogenated Cz-Si crystals, PHYSICA B, 302, 2001, pp. 212-219
C-s-H-2 defect in crystalline silicon
Authors: Markevich, VP Murin, LI Hermansson, J Kleverman, M Lindstrom, JL Fukata, N Suezawa, M
Citation: Vp. Markevich et al., C-s-H-2 defect in crystalline silicon, PHYSICA B, 302, 2001, pp. 220-226
Proceedings of the Yamada Conference LIV - The 9th International Conference on Shallow-Level Centers in Semiconductors - SLCS-9 - held in Awaji Island, Hyogo, Japan 24-27 September 2000 - Preface
Authors: Katayama-Yoshida, H Suezawa, M Nakata, H
Citation: H. Katayama-yoshida et al., Proceedings of the Yamada Conference LIV - The 9th International Conference on Shallow-Level Centers in Semiconductors - SLCS-9 - held in Awaji Island, Hyogo, Japan 24-27 September 2000 - Preface, PHYSICA B, 302, 2001, pp. VII-VII
Temperature dependence of vibrational spectra of H-point defect complexes and H-2 in Si - art. no. 085205
Authors: Suezawa, M Fukata, N Takahashi, T Saito, M Yamada-Kaneta, H
Citation: M. Suezawa et al., Temperature dependence of vibrational spectra of H-point defect complexes and H-2 in Si - art. no. 085205, PHYS REV B, 6408(8), 2001, pp. 5205
Formation of defect complexes by electron-irradiation of hydrogenated crystalline silicon - art. no. 035201
Authors: Suezawa, M
Citation: M. Suezawa, Formation of defect complexes by electron-irradiation of hydrogenated crystalline silicon - art. no. 035201, PHYS REV B, 6303(3), 2001, pp. 5201
Hydrogen-related complexes formed by electron-irradiation of hydrogenated silicon - art. no. 035203
Authors: Suezawa, M
Citation: M. Suezawa, Hydrogen-related complexes formed by electron-irradiation of hydrogenated silicon - art. no. 035203, PHYS REV B, 6303(3), 2001, pp. 5203
Early stages of oxygen precipitation in silicon: The effect of hydrogen
Authors: Markevich, VP Murin, LI Lindstrom, JL Suezawa, M
Citation: Vp. Markevich et al., Early stages of oxygen precipitation in silicon: The effect of hydrogen, SEMICONDUCT, 34(9), 2000, pp. 998-1003
Observation and theory of the V-O-H-2 complex in silicon
Authors: Markevich, VP Murin, LI Suezawa, M Lindstrom, JL Coutinho, J Jones, R Briddon, PR Oberg, S
Citation: Vp. Markevich et al., Observation and theory of the V-O-H-2 complex in silicon, PHYS REV B, 61(19), 2000, pp. 12964-12969
Electron-beam-induced-current study of artificial twist boundaries in bonded Si wafers
Authors: Ikeda, K Sekiguchi, T Ito, S Takebe, M Suezawa, M
Citation: K. Ikeda et al., Electron-beam-induced-current study of artificial twist boundaries in bonded Si wafers, J CRYST GR, 210(1-3), 2000, pp. 90-93
Formation and annihilation of H-point defect complexes in quenched Si doped with C
Authors: Fukata, N Suezawa, M
Citation: N. Fukata et M. Suezawa, Formation and annihilation of H-point defect complexes in quenched Si doped with C, J APPL PHYS, 88(8), 2000, pp. 4525-4530
Response to "Comment on 'Hydrogen-oxygen interaction in silicon at around 50 degrees C' [J. Appl. Phys. 87, 4635 (2000)]
Authors: Markevich, VP Suezawa, M
Citation: Vp. Markevich et M. Suezawa, Response to "Comment on 'Hydrogen-oxygen interaction in silicon at around 50 degrees C' [J. Appl. Phys. 87, 4635 (2000)], J APPL PHYS, 87(9), 2000, pp. 4637-4637
Annealing behavior of hydrogen-defect complexes in carbon-doped Si quenched in hydrogen atmosphere
Authors: Fukata, N Suezawa, M
Citation: N. Fukata et M. Suezawa, Annealing behavior of hydrogen-defect complexes in carbon-doped Si quenched in hydrogen atmosphere, J APPL PHYS, 87(12), 2000, pp. 8361-8367
Temperature-dependent retardation effect of dopants on oxygen diffusion inheavily doped Czochralski silicon
Authors: Takeno, H Sunakawa, K Suezawa, M
Citation: H. Takeno et al., Temperature-dependent retardation effect of dopants on oxygen diffusion inheavily doped Czochralski silicon, APPL PHYS L, 77(3), 2000, pp. 376-378
Temperature dependence of the optical absorption peaks at around 1990 cm(-1) in electron-irradiated Si doped with hydrogen
Authors: Suezawa, M
Citation: M. Suezawa, Temperature dependence of the optical absorption peaks at around 1990 cm(-1) in electron-irradiated Si doped with hydrogen, JPN J A P 1, 38(6A), 1999, pp. 3632-3633
The formation of H(2) by electron-irradiation of hydrogenated Si
Authors: Suezawa, M
Citation: M. Suezawa, The formation of H(2) by electron-irradiation of hydrogenated Si, JPN J A P 2, 38(7A), 1999, pp. L758-L760
Hydrogen-point defect complexes in electron-irradiated C-doped and high purity Si
Authors: Suezawa, M
Citation: M. Suezawa, Hydrogen-point defect complexes in electron-irradiated C-doped and high purity Si, JPN J A P 2, 38(6AB), 1999, pp. L608-L610
H-2-related defects in Si quenched in H-2 gas studied by optical absorption measurements
Authors: Suezawa, M
Citation: M. Suezawa, H-2-related defects in Si quenched in H-2 gas studied by optical absorption measurements, JPN J A P 2, 38(5A), 1999, pp. L484-L486
Interaction of hydrogen (deuterium) molecules with interstitial oxygen atoms in silicon
Authors: Markevich, VP Suezawa, M Murin, LI
Citation: Vp. Markevich et al., Interaction of hydrogen (deuterium) molecules with interstitial oxygen atoms in silicon, MAT SCI E B, 58(1-2), 1999, pp. 26-30
Infrared absorption study of a DX-like hydrogen-related center in silicon
Authors: Markevich, VP Suezawa, M Murin, LI
Citation: Vp. Markevich et al., Infrared absorption study of a DX-like hydrogen-related center in silicon, MAT SCI E B, 58(1-2), 1999, pp. 104-107
Optical absorption study of Zn-H complexes in Si
Authors: Mori, R Suezawa, M
Citation: R. Mori et M. Suezawa, Optical absorption study of Zn-H complexes in Si, PHYSICA B, 274, 1999, pp. 220-223
Thermal properties of H-related complexes in electron-irradiated Si doped with H
Authors: Suezawa, M
Citation: M. Suezawa, Thermal properties of H-related complexes in electron-irradiated Si doped with H, PHYSICA B, 274, 1999, pp. 224-227
Optical absorption due to H-point defect complexes in quenched Si doped with C
Authors: Fukata, N Suezawa, M
Citation: N. Fukata et M. Suezawa, Optical absorption due to H-point defect complexes in quenched Si doped with C, PHYSICA B, 274, 1999, pp. 247-250
Risultati: 1-25 | 26-34