AAAAAA
Results:
1-12
|
Results: 12
Authors:
Higa, M
Kinjo, T
Miyagi, J
Sakumoto, N
Iwamasa, T
Kishaba, M
Sunakawa, H
Citation: M. Higa et al., Differences in EBNA2 and LMP-1 carboxy terminal region sequences of Epstein-Barr virus type a between the tumors in a multiple cancer patient, PATH RES PR, 197(6), 2001, pp. 401-409
Authors:
Ozono, K
Obara, M
Usui, A
Sunakawa, H
Citation: K. Ozono et al., High-speed ablation etching of GaN semiconductor using femtosecond laser, OPT COMMUN, 189(1-3), 2001, pp. 103-106
Authors:
Tsuhako, K
Nakazato, I
Miyagi, J
Iwamasa, T
Arasaki, A
Hiratsuka, H
Sunakawa, H
Kohama, G
Abo, T
Citation: K. Tsuhako et al., Comparative study of oral squamous cell carcinoma in Okinawa, Southern Japan and Sapporo in Hokkaido, Northern Japan; with special reference to humanpapillomavirus and Epstein-Barr virus infection, J ORAL PATH, 29(2), 2000, pp. 70-79
Authors:
Kuramoto, M
Yamaguchi, AA
Usui, A
Sasaoka, C
Hisanaga, Y
Kimura, A
Sunakawa, H
Kuroda, N
Nido, M
Mizuta, M
Citation: M. Kuramoto et al., Towards a durable InGaN MQW LD - Room temperature CW operation of InGaN MQW laser, NEC RES DEV, 41(1), 2000, pp. 74-86
Authors:
Natsume, N
Kawai, T
Kohama, G
Teshima, T
Kochi, S
Ohashi, Y
Enomoto, S
Ishii, M
Shigematsu, T
Nakano, Y
Matsuya, T
Kogo, M
Yoshimura, Y
Ohishi, M
Nakamura, N
Katsuki, T
Goto, M
Shimizu, M
Yanagisawa, S
Mimura, T
Sunakawa, H
Citation: N. Natsume et al., Incidence of cleft lip or palate in 303 738 Japanese babies born between 1994 and 1995, BR J ORAL M, 38(6), 2000, pp. 605-607
Authors:
Bozdog, C
Chow, KH
Watkins, GD
Sunakawa, H
Kuroda, N
Usui, A
Citation: C. Bozdog et al., Electron paramagnetic resonance of Cu(d(9)) in GaN, PHYS REV B, 62(19), 2000, pp. 12923-12926
Authors:
Sakai, A
Sunakawa, H
Kimura, A
Usui, A
Citation: A. Sakai et al., Dislocation propagation in GaN films formed by epitaxial lateral overgrowth, J ELEC MICR, 49(2), 2000, pp. 323-330
Authors:
Watanabe, H
Kuroda, N
Sunakawa, H
Usui, A
Citation: H. Watanabe et al., Scanning reflection electron microscopy study of surface defects in GaN films formed by epitaxial lateral overgrowth, APPL PHYS L, 77(12), 2000, pp. 1786-1788
Authors:
Sakai, A
Sunakawa, H
Kimura, A
Usui, A
Citation: A. Sakai et al., Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth, APPL PHYS L, 76(4), 2000, pp. 442-444
Authors:
Kobayashi, K
Yamaguchi, AA
Kimura, S
Sunakawa, H
Kimura, A
Usui, A
Citation: K. Kobayashi et al., X-ray rocking curve determination of twist and tilt angles in GaN films grown by an epitaxial-lateral-overgrowth technique, JPN J A P 2, 38(6AB), 1999, pp. L611-L613
Authors:
Kuramoto, M
Sasaoka, C
Hisanaga, Y
Kimura, A
Yamaguchi, AA
Sunakawa, H
Kuroda, N
Nido, M
Usui, A
Mizuta, M
Citation: M. Kuramoto et al., Room-temperature continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact, JPN J A P 2, 38(2B), 1999, pp. L184-L186
Authors:
Kuramoto, M
Sasaoka, C
Hisanaga, Y
Kimura, A
Yamaguchi, AA
Sunakawa, H
Kuroda, N
Nido, M
Usui, A
Mizuta, M
Citation: M. Kuramoto et al., Continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact, PHYS ST S-A, 176(1), 1999, pp. 35-38
Risultati:
1-12
|