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Results: 1-11 |
Results: 11
Numerical modelling of time-dependent deformation around an underground mine in rock salt
Authors: Swift, GM Reddish, DJ Lloyd, PW Dunham, RK
Citation: Gm. Swift et al., Numerical modelling of time-dependent deformation around an underground mine in rock salt, T I MIN M-A, 110, 2001, pp. A107-A113
Angular dependence of DRAM upset susceptibility and implications for testing and analysis
Authors: Guertin, SM Edmonds, LD Swift, GM
Citation: Sm. Guertin et al., Angular dependence of DRAM upset susceptibility and implications for testing and analysis, IEEE NUCL S, 47(6), 2000, pp. 2380-2385
In-flight observations of multiple-bit upset in DRAMs
Authors: Swift, GM Guertin, SM
Citation: Gm. Swift et Sm. Guertin, In-flight observations of multiple-bit upset in DRAMs, IEEE NUCL S, 47(6), 2000, pp. 2386-2391
Analysis of radiation effects on individual DRAM cells
Authors: Scheick, LZ Guertin, SM Swift, GM
Citation: Lz. Scheick et al., Analysis of radiation effects on individual DRAM cells, IEEE NUCL S, 47(6), 2000, pp. 2534-2538
A model for single-event transients in comparators
Authors: Johnston, AH Swift, GM Miyahira, TF Edmonds, LD
Citation: Ah. Johnston et al., A model for single-event transients in comparators, IEEE NUCL S, 47(6), 2000, pp. 2624-2633
Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots
Authors: Leon, R Swift, GM Magness, B Taylor, WA Tang, YS Wang, KL Dowd, P Zhang, YH
Citation: R. Leon et al., Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots, APPL PHYS L, 76(15), 2000, pp. 2074-2076
On the role of energy deposition in triggering SEGR in power MOSFETs
Authors: Selva, LE Swift, GM Taylor, WA Edmonds, LD
Citation: Le. Selva et al., On the role of energy deposition in triggering SEGR in power MOSFETs, IEEE NUCL S, 46(6), 1999, pp. 1403-1409
Radiation effects on advanced flash memories
Authors: Nguyen, DN Guertin, SM Swift, GM Johnston, AH
Citation: Dn. Nguyen et al., Radiation effects on advanced flash memories, IEEE NUCL S, 46(6), 1999, pp. 1744-1750
Breakdown of gate oxides during irradiation with heavy ions
Authors: Johnston, AH Swift, GM Miyahira, T Edmonds, LD
Citation: Ah. Johnston et al., Breakdown of gate oxides during irradiation with heavy ions, IEEE NUCL S, 45(6), 1998, pp. 2500-2508
Radiation response of a MEMS accelerometer: An electrostatic force
Authors: Edmonds, LD Swift, GM Lee, CI
Citation: Ld. Edmonds et al., Radiation response of a MEMS accelerometer: An electrostatic force, IEEE NUCL S, 45(6), 1998, pp. 2779-2788
Single-event upset effects in optocouplers
Authors: Johnston, AH Swift, GM Miyahira, T Guertin, S Edmonds, LD
Citation: Ah. Johnston et al., Single-event upset effects in optocouplers, IEEE NUCL S, 45(6), 1998, pp. 2867-2875
Risultati: 1-11 |