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Results:
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Results: 24
Authors:
TAGUCHI A
TAKAHEI K
MATSUOKA M
TOHNO S
Citation: A. Taguchi et al., EVALUATION OF THE ENERGY-TRANSFER RATE BETWEEN AN ER 4F SHELL AND A SI HOST IN ER-DOPED SI, Journal of applied physics, 84(8), 1998, pp. 4471-4478
Authors:
TAGUCHI A
TAKAHEI K
Citation: A. Taguchi et K. Takahei, ERBIUM IN SI - ESTIMATION OF ENERGY-TRANSFER RATE AND TRAP DEPTH FROMTEMPERATURE-DEPENDENCE OF INTRA-4F-SHELL LUMINESCENCE, Journal of applied physics, 83(5), 1998, pp. 2800-2805
Authors:
HOGG RA
TAKAHEI K
TAGUCHI A
Citation: Ra. Hogg et al., ER-RELATED TRAP LEVELS IN GAAS-ER,O STUDIED BY OPTICAL SPECTROSCOPY UNDER HYDROSTATIC-PRESSURE, Physical review. B, Condensed matter, 56(16), 1997, pp. 10255-10263
Authors:
ISHIYAMA T
MURAKAMI K
TAKAHEI K
TAGUCHI A
Citation: T. Ishiyama et al., 4F-SHELL CONFIGURATION OF YB IN INP STUDIED BY ELECTRON-SPIN-RESONANCE, Journal of applied physics, 82(9), 1997, pp. 4457-4460
Authors:
TAKAHEI K
TAGUCHI A
HOGG RA
Citation: K. Takahei et al., ATOMIC CONFIGURATIONS OF ER CENTERS IN GAAS-ER,O AND ALGAAS-ER,O STUDIED BY SITE-SELECTIVE LUMINESCENCE SPECTROSCOPY, Journal of applied physics, 82(8), 1997, pp. 3997-4005
Authors:
HOGG RA
TAKAHEI K
TAGUCHI A
TAKARABE K
MIZUSHIMA T
MINOMURA S
Citation: Ra. Hogg et al., CONFIGURATIONAL TRANSFORMATION OF AN ER CENTER IN GAAS-ER,O UNDER HYDROSTATIC-PRESSURE, Journal of applied physics, 82(2), 1997, pp. 813-816
Authors:
TAKARABE K
MIZUSHIMA T
MINOMURA S
HOGG RA
TAGUCHI A
TAKAHEI K
Citation: K. Takarabe et al., PRESSURE-INDUCED INTRA-4F LUMINESCENCE IN GAAS-ER,O, Applied physics letters, 71(1), 1997, pp. 93-95
Authors:
YAMAMOTO Y
KACZANOWSKI J
KIDO Y
NAKATA J
YAMAGUCHI H
TAKAHEI K
Citation: Y. Yamamoto et al., DIRECT DETERMINATION OF IMPACT-PARAMETER-DEPENDENT STOPPING POWERS FOR MILLION-ELECTRON-VOLT HE IONS PENETRATING ER-DOPED GAAS, Physical review. A, 53(3), 1996, pp. 1644-1652
Authors:
KACZANOWSKI J
YAMAMOTO Y
KIDO Y
NAKATA J
TAKAHEI K
Citation: J. Kaczanowski et al., MONTE-CARLO SIMULATION OF CHANNELING SPECTRA FOR COMPOUND-CRYSTALS WITH POINT-DEFECTS AND CRYSTALLINE PRECIPITATES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 117(3), 1996, pp. 275-282
Authors:
TAGUCHI A
TAKAHEI K
Citation: A. Taguchi et K. Takahei, TRAP LEVEL CHARACTERISTICS OF RARE-EARTH LUMINESCENCE-CENTERS IN III-V SEMICONDUCTORS, Journal of applied physics, 79(8), 1996, pp. 4330-4334
Authors:
TAGUCHI A
TAKAHEI K
Citation: A. Taguchi et K. Takahei, BAND-EDGE-RELATED LUMINESCENCE DUE TO THE ENERGY BACKTRANSFER IN YB-DOPED INP, Journal of applied physics, 79(6), 1996, pp. 3261-3266
Authors:
HOGG RA
TAKAHEI K
TAGUCHI A
Citation: Ra. Hogg et al., PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF GAAS-ER,O IN THE NEAR-BAND-EDGE REGION, Journal of applied physics, 79(11), 1996, pp. 8682-8687
Authors:
HOGG RA
TAKAHEI K
TAGUCHI A
HORIKOSHI Y
Citation: Ra. Hogg et al., PREFERENTIAL ALIGNMENT OF ER-2O CENTERS IN GAAS-ER,O REVEALED BY ANISOTROPIC HOST-EXCITED PHOTOLUMINESCENCE, Applied physics letters, 68(23), 1996, pp. 3317-3319
Authors:
TAKAHEI K
TAGUCHI A
Citation: K. Takahei et A. Taguchi, PHOTOLUMINESCENCE ANALYSIS OF ER-DOPED GAAS UNDER HOST PHOTOEXCITATION AND DIRECT INTRA-4F-SHELL PHOTOEXCITATION, Journal of applied physics, 78(9), 1995, pp. 5614-5618
Authors:
NAKATA J
JOURDAN N
YAMAGUCHI H
TAKAHEI K
YAMAMOTO Y
KIDO Y
Citation: J. Nakata et al., STRUCTURAL-ANALYSIS OF ERBIUM SHEET-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY, WITH ION CHANNELING FOLLOWED BY MONTE-CARLO SIMULATION, Journal of applied physics, 77(7), 1995, pp. 3095-3103
Authors:
TAKAHEI K
TAGUCHI A
Citation: K. Takahei et A. Taguchi, PHOTOLUMINESCENCE EXCITATION ANALYSIS OF ER-DOPED GAAS GROWN BY METALORGANIC VAPOR-PHASE DEPOSITION, Journal of applied physics, 77(4), 1995, pp. 1735-1740
Authors:
TAKAHEI K
TAGUCHI A
Citation: K. Takahei et A. Taguchi, EFFICIENT ER LUMINESCENCE-CENTERS FORMED IN GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION WITH OXYGEN CODOPING, JPN J A P 1, 33(1B), 1994, pp. 709-711
Authors:
KIDO Y
ISHIDA T
NAKAI E
SAEKI M
NAKATA J
TAKAHEI K
Citation: Y. Kido et al., LATTICE LOCATION OF ER IN GAAS DETERMINED FROM MONTE-CARLO SIMULATIONOF ION CHANNELING SPECTRA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 484-489
Authors:
KIDO Y
IKEDA A
YAMAMOTO Y
NAKATA J
YAMAGUCHI H
TAKAHEI K
Citation: Y. Kido et al., IMPACT-PARAMETER DEPENDENT STOPPING POWERS FOR AXIALLY CHANNELED AND SEMICHANNELED MEV HE IONS IN GAAS-ER, Physical review. B, Condensed matter, 49(20), 1994, pp. 14387-14396
Authors:
TAKAHEI K
TAGUCHI A
HORIKOSHI Y
NAKATA J
Citation: K. Takahei et al., ATOMIC CONFIGURATION OF THE ER-O LUMINESCENCE CENTER IN ER-DOPED GAASWITH OXYGEN CODOPING, Journal of applied physics, 76(7), 1994, pp. 4332-4339
Authors:
TAGUCHI A
TAKAHEI K
HORIKOSHI Y
Citation: A. Taguchi et al., MULTIPHONON-ASSISTED ENERGY-TRANSFER BETWEEN YB 4F SHELL AND INP HOST, Journal of applied physics, 76(11), 1994, pp. 7288-7295
Authors:
CHANG SJ
TAKAHEI K
Citation: Sj. Chang et K. Takahei, STUDIES OF GAASER IMPACT EXCITED ELECTROLUMINESCENCE DEVICES, Applied physics letters, 65(4), 1994, pp. 433-435
Authors:
TAKAHEI K
TAGUCHI A
Citation: K. Takahei et A. Taguchi, SELECTIVE FORMATION OF AN EFFICIENT ER-O LUMINESCENCE CENTER IN GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION UNDER AN ATMOSPHERE CONTAINING OXYGEN, Journal of applied physics, 74(3), 1993, pp. 1979-1982
Authors:
TAGUCHI A
KAWASHIMA M
TAKAHEI K
HORIKOSHI Y
Citation: A. Taguchi et al., ER LUMINESCENCE-CENTERS IN GAAS GROWN BY MIGRATION-ENHANCED EPITAXY, Applied physics letters, 63(8), 1993, pp. 1074-1076
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