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Results:
1-13
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Results: 13
Authors:
PARKS JW
BRENNAN KE
TAROF LE
Citation: Jw. Parks et al., MACROSCOPIC DEVICE SIMULATION OF INGAAS INP BASED AVALANCHE PHOTODIODES/, VLSI design (Print), 6(1-4), 1998, pp. 79-82
Authors:
BANDYOPADHYAY A
DEEN MJ
TAROF LE
CLARK W
Citation: A. Bandyopadhyay et al., A SIMPLIFIED APPROACH TO TIME-DOMAIN MODELING OF AVALANCHE PHOTODIODES, IEEE journal of quantum electronics, 34(4), 1998, pp. 691-699
Authors:
HARALSON JN
PARKS JW
BRENNAN KF
CLARK W
TAROF LE
Citation: Jn. Haralson et al., NUMERICAL-SIMULATION OF AVALANCHE BREAKDOWN WITHIN INP-INGAAS SAGCM STANDOFF AVALANCHE PHOTODIODES, Journal of lightwave technology, 15(11), 1997, pp. 2137-2140
Authors:
PARKS JW
SMITH AW
BRENNAN KF
TAROF LE
Citation: Jw. Parks et al., THEORETICAL-STUDY OF DEVICE SENSITIVITY AND GAIN SATURATION OF SEPARATE ABSORPTION, GRADING, CHARGE, AND MULTIPLICATION INP INGAAS AVALANCHE PHOTODIODES/, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2113-2121
Authors:
ZHAO X
DEEN MJ
TAROF LE
Citation: X. Zhao et al., LOW-FREQUENCY NOISE IN SEPARATE ABSORPTION, GRADING, CHARGE AND MULTIPLICATION (SAGCM) AVALANCHE PHOTODIODES, Electronics Letters, 32(3), 1996, pp. 250-252
Authors:
TAROF LE
BRUCE R
KNIGHT DG
YU J
KIM HB
BAIRD T
Citation: Le. Tarof et al., PLANAR INP-INGAAS SINGLE-GROWTH AVALANCHE PHOTODIODES WITH NO GUARD RINGS, IEEE photonics technology letters, 7(11), 1995, pp. 1330-1332
Authors:
MA CLF
DEEN MJ
TAROF LE
YU JCH
Citation: Clf. Ma et al., TEMPERATURE-DEPENDENCE OF BREAKDOWN VOLTAGES IN SEPARATE ABSORPTION, GRADING, CHARGE, AND MULTIPLICATION INP INGAAS AVALANCHE PHOTODIODES/, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 810-818
Authors:
MA CLF
DEEN MJ
TAROF LE
Citation: Clf. Ma et al., DEVICE PARAMETERS EXTRACTION IN SEPARATE ABSORPTION, GRADING, CHARGE,AND MULTIPLICATION INP INGAAS AVALANCHE PHOTODIODES/, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2070-2079
Authors:
MA CLF
DEEN MJ
TAROF LE
Citation: Clf. Ma et al., MULTIPLICATION IN SEPARATE ABSORPTION, GRADING, CHARGE, AND MULTIPLICATION INP-INGAAS AVALANCHE PHOTODIODES, IEEE journal of quantum electronics, 31(11), 1995, pp. 2078-2089
Authors:
YU J
TAROF LE
BRUCE R
KNIGHT DG
VISVANATHA K
BAIRD T
Citation: J. Yu et al., NOISE PERFORMANCE OF SEPARATE ABSORPTION, GRADING, CHARGE AND MULTIPLICATION INP INGAAS AVALANCHE PHOTODIODES/, IEEE photonics technology letters, 6(5), 1994, pp. 632-634
Authors:
TAROF LE
YU J
BAIRD T
BRUCE R
KNIGHT DG
Citation: Le. Tarof et al., TEMPERATURE-MEASUREMENTS OF SEPARATE ABSORPTION, GRADING, CHARGE, ANDMULTIPLICATION (SAGCM) INP INGAAS AVALANCHE PHOTODIODES (APDS)/, IEEE photonics technology letters, 5(9), 1993, pp. 1044-1046
Authors:
TAROF LE
Citation: Le. Tarof, HIGH-FREQUENCY PERFORMANCE OF SEPARATE ABSORPTION GRADING, CHARGE, AND MULTIPLICATION INP IN-GAAS AVALANCHE PHOTODIODES (VOL 5, PG 672, 1993)/, IEEE photonics technology letters, 5(7), 1993, pp. 859-859
Authors:
TAROF LE
YU J
BRUCE R
KNIGHT DG
BAIRD T
OOSTERBRINK B
Citation: Le. Tarof et al., HIGH-FREQUENCY PERFORMANCE OF SEPARATE ABSORPTION GRADING, CHARGE, AND MULTIPLICATION INP INGAAS AVALANCHE PHOTODIODES/, IEEE photonics technology letters, 5(6), 1993, pp. 672-674
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1-13
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