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Results: 1-25 | 26-50 | 51-75 | 76-83
Results: 1-25/83
GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GAN WITH HYDRAZINE ON SPINEL SUBSTRATES
Authors: NIKISHIN SA TEMKIN H ANTIPOV VG GURIEV AI ZUBRILOV AS ELYUKHIN VA FALEEV NN KYUTT RN CHIN AK
Citation: Sa. Nikishin et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GAN WITH HYDRAZINE ON SPINEL SUBSTRATES, Applied physics letters, 72(19), 1998, pp. 2361-2363
LUMINESCENCE OF GAN GAAS(111)B GROWN BY MOLECULAR-BEAM EPITAXY WITH HYDRAZINE/
Authors: NIKISHIN SA ANTIPOV VG GURIEV AI ELYUKHIN VA FALEEV NN KUDRIAVTSEV YA LEBEDEV AB SHUBINA TV ZUBRILOV AS TEMKIN H
Citation: Sa. Nikishin et al., LUMINESCENCE OF GAN GAAS(111)B GROWN BY MOLECULAR-BEAM EPITAXY WITH HYDRAZINE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1289-1292
SINGLE-PHASE ZNSNAS2 GROWN BY MOLECULAR-BEAM EPITAXY
Authors: SERYOGIN GA NIKISHIN SA TEMKIN H SCHLAF R SHARP LI WEN YC PARKINSON B ELYUKHIN VA KUDRIAVTSEV YA MINTAIROV AM FALEEV NN BAIDAKOVA MV
Citation: Ga. Seryogin et al., SINGLE-PHASE ZNSNAS2 GROWN BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1456-1458
MEASUREMENT OF DIFFERENTIAL CARRIER LIFETIME IN VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: GIUDICE GE KUKSENKOV DV TEMKIN H
Citation: Ge. Giudice et al., MEASUREMENT OF DIFFERENTIAL CARRIER LIFETIME IN VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE photonics technology letters, 10(7), 1998, pp. 920-922
LOW-FREQUENCY NOISE IN ALGAN GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/
Authors: KUKSENKOV DV TEMKIN H GASKA R YANG JW
Citation: Dv. Kuksenkov et al., LOW-FREQUENCY NOISE IN ALGAN GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/, IEEE electron device letters, 19(7), 1998, pp. 222-224
ZNCDSE ZNSE QUANTUM-WELL WIRES FABRICATED BY REACTIVE ION ETCHING ANDWET CHEMICAL TREATMENT/
Authors: GUREVICH SA LAVROVA OA LOMASOV NV NESTEROV SI SKOPINA VI TANKLEVSKAYA EM TRAVNIKOV VV OSINSKY A QIU Y TEMKIN H RABE M HENNEBERGER F
Citation: Sa. Gurevich et al., ZNCDSE ZNSE QUANTUM-WELL WIRES FABRICATED BY REACTIVE ION ETCHING ANDWET CHEMICAL TREATMENT/, Semiconductor science and technology, 13(1), 1998, pp. 139-141
LOW-FREQUENCY NOISE AND PERFORMANCE OF GAN P-N-JUNCTION PHOTODETECTORS
Authors: KUKSENKOV DV TEMKIN H OSINSKY A GASKA R KHAN MA
Citation: Dv. Kuksenkov et al., LOW-FREQUENCY NOISE AND PERFORMANCE OF GAN P-N-JUNCTION PHOTODETECTORS, Journal of applied physics, 83(4), 1998, pp. 2142-2146
PROPAGATION OF EIGENMODES AND TRANSFER AMPLITUDES IN OPTICAL WAVE-GUIDE STRUCTURES
Authors: MASHKOV VA TEMKIN H
Citation: Va. Mashkov et H. Temkin, PROPAGATION OF EIGENMODES AND TRANSFER AMPLITUDES IN OPTICAL WAVE-GUIDE STRUCTURES, IEEE journal of quantum electronics, 34(10), 1998, pp. 2036-2047
LOW-FREQUENCY NOISE IN ALGAN-GAN DOPED-CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS GROWN ON INSULATING SIC SUBSTRATES
Authors: KUKSENKOV DV GIUDICE GE TEMKIN H GASKA R PING A ADESIDA I
Citation: Dv. Kuksenkov et al., LOW-FREQUENCY NOISE IN ALGAN-GAN DOPED-CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS GROWN ON INSULATING SIC SUBSTRATES, Electronics Letters, 34(23), 1998, pp. 2274-2276
RAMAN STUDIES OF NITROGEN INCORPORATION IN GAAS1-XNX
Authors: PROKOFYEVA T SAUNCY T SEON M HOLTZ M QIU Y NIKISHIN S TEMKIN H
Citation: T. Prokofyeva et al., RAMAN STUDIES OF NITROGEN INCORPORATION IN GAAS1-XNX, Applied physics letters, 73(10), 1998, pp. 1409-1411
SCHOTTKY-BARRIER PHOTODETECTORS BASED ON ALGAN
Authors: OSINSKY A GANGOPADHYAY S LIM BW ANWAR MZ KHAN MA KUKSENKOV DV TEMKIN H
Citation: A. Osinsky et al., SCHOTTKY-BARRIER PHOTODETECTORS BASED ON ALGAN, Applied physics letters, 72(6), 1998, pp. 742-744
VISIBLE-BLIND GAN SCHOTTKY-BARRIER DETECTORS GROWN ON SI(111)
Authors: OSINSKY A GANGOPADHYAY S YANG JW GASKA R KUKSENKOV D TEMKIN H SHMAGIN IK CHANG YC MUTH JF KOLBAS RM
Citation: A. Osinsky et al., VISIBLE-BLIND GAN SCHOTTKY-BARRIER DETECTORS GROWN ON SI(111), Applied physics letters, 72(5), 1998, pp. 551-553
METALORGANIC MOLECULAR-BEAM EPITAXY OF GAASN WITH DIMETHYLHYDRAZINE
Authors: QIU Y JIN C FRANCOEUR S NIKISHIN SA TEMKIN H
Citation: Y. Qiu et al., METALORGANIC MOLECULAR-BEAM EPITAXY OF GAASN WITH DIMETHYLHYDRAZINE, Applied physics letters, 72(16), 1998, pp. 1999-2001
LUMINESCENCE OF AS-GROWN AND THERMALLY ANNEALED GAASN GAAS/
Authors: FRANCOEUR S SIVARAMAN G QIU Y NIKISHIN S TEMKIN H
Citation: S. Francoeur et al., LUMINESCENCE OF AS-GROWN AND THERMALLY ANNEALED GAASN GAAS/, Applied physics letters, 72(15), 1998, pp. 1857-1859
ORIGIN OF CONDUCTIVITY AND LOW-FREQUENCY NOISE IN REVERSE-BIASED GAN P-N-JUNCTION
Authors: KUKSENKOV DV TEMKIN H OSINSKY A GASKA R KHAN MA
Citation: Dv. Kuksenkov et al., ORIGIN OF CONDUCTIVITY AND LOW-FREQUENCY NOISE IN REVERSE-BIASED GAN P-N-JUNCTION, Applied physics letters, 72(11), 1998, pp. 1365-1367
POLARIZATION RELATED PROPERTIES OF VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: KUKSENKOV DV TEMKIN H
Citation: Dv. Kuksenkov et H. Temkin, POLARIZATION RELATED PROPERTIES OF VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 390-395
III-V-N COMPOUNDS FOR INFRARED APPLICATIONS
Authors: SALZMAN J TEMKIN H
Citation: J. Salzman et H. Temkin, III-V-N COMPOUNDS FOR INFRARED APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 148-152
UV, BLUE AND GREEN LIGHT-EMITTING-DIODES BASED ON GAN-INGAN MULTIPLE-QUANTUM WELLS OVER SAPPHIRE AND (111)-SPINEL SUBSTRATES
Authors: KHAN MA CHEN Q YANG J SUN CJ LIM B TEMKIN H SCHETZINA J SHUR MS
Citation: Ma. Khan et al., UV, BLUE AND GREEN LIGHT-EMITTING-DIODES BASED ON GAN-INGAN MULTIPLE-QUANTUM WELLS OVER SAPPHIRE AND (111)-SPINEL SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 265-268
ORDERING EFFECTS IN RAMAN-SPECTRA OF COHERENTLY STRAINED GAAS1-XNX
Authors: MINTAIROV AM BLAGNOV PA MELEHIN VG FALEEV NN MERZ JL QIU Y NIKISHIN SA TEMKIN H
Citation: Am. Mintairov et al., ORDERING EFFECTS IN RAMAN-SPECTRA OF COHERENTLY STRAINED GAAS1-XNX, Physical review. B, Condensed matter, 56(24), 1997, pp. 15836-15841
LATTICE-VIBRATIONS AND PHONON-PLASMON COUPLING IN RAMAN-SPECTRA OF P-TYPE IN0.53GA0.47AS
Authors: MINTAIROV AM TEMKIN H
Citation: Am. Mintairov et H. Temkin, LATTICE-VIBRATIONS AND PHONON-PLASMON COUPLING IN RAMAN-SPECTRA OF P-TYPE IN0.53GA0.47AS, Physical review. B, Condensed matter, 55(8), 1997, pp. 5117-5123
ROBUST WAVELENGTH-DIVISION MULTIPLEXED LOCAL-AREA NETWORKS
Authors: ELBAWAB TS VAISHNAV CH JAYASUMANA AP TEMKIN H SAUER JR WILLEBRAND HA
Citation: Ts. Elbawab et al., ROBUST WAVELENGTH-DIVISION MULTIPLEXED LOCAL-AREA NETWORKS, Fiber and integrated optics, 16(3), 1997, pp. 237-260
GAS-SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH OF LOW-THRESHOLD CURRENT 1.3 MU-M INASP INGAASP LASERS/
Authors: THIAGARAJAN P GIUDICE GE TEMKIN H ROBINSON GY
Citation: P. Thiagarajan et al., GAS-SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH OF LOW-THRESHOLD CURRENT 1.3 MU-M INASP INGAASP LASERS/, Journal of crystal growth, 175, 1997, pp. 945-947
GAS-SOURCE MOLECULAR-BEAM EPITAXY OF CUBIC GAN GAAS(001) USING HYDRAZINE/
Authors: NIKISHIN SA SERYOGIN GA TEMKIN H ANTIPOV VG RUVIMOV SS MERKULOV AV
Citation: Sa. Nikishin et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF CUBIC GAN GAAS(001) USING HYDRAZINE/, Journal of crystal growth, 175, 1997, pp. 139-144
NOVEL WET CHEMICAL ETCH FOR NANOSTRUCTURES BASED ON II-VI COMPOUNDS
Authors: OSINSKY A QIU Y MAHAN J TEMKIN H GUREVICH SA NESTEROV SI TANKLEVSKAIA EM TRETYAKOV V LAVROVA OA SKOPINA VI
Citation: A. Osinsky et al., NOVEL WET CHEMICAL ETCH FOR NANOSTRUCTURES BASED ON II-VI COMPOUNDS, Applied physics letters, 71(4), 1997, pp. 509-511
LOW NOISE P-PI-N GAN ULTRAVIOLET PHOTODETECTORS
Authors: OSINSKY A GANGOPADHYAY S GASKA R WILLIAMS B KHAN MA KUKSENKOV D TEMKIN H
Citation: A. Osinsky et al., LOW NOISE P-PI-N GAN ULTRAVIOLET PHOTODETECTORS, Applied physics letters, 71(16), 1997, pp. 2334-2336
Risultati: 1-25 | 26-50 | 51-75 | 76-83