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Results:
1-13
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Results: 13
Authors:
ZHANG X
MOERMAN I
SYS C
DEMEESTER P
CRAWLEY JA
THRUSH EJ
Citation: X. Zhang et al., HIGHLY UNIFORM ALGAAS GAAS AND INGAAS(P)/INP STRUCTURES GROWN IN A MULTIWAFER VERTICAL ROTATING SUSCEPTOR MOVPE REACTOR/, Journal of crystal growth, 170(1-4), 1997, pp. 83-87
Authors:
VANDERSTRICHT W
MOERMAN I
DEMEESTER P
CRAWLEY JA
THRUSH EJ
Citation: W. Vanderstricht et al., STUDY OF GAN AND INGAN FILMS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 170(1-4), 1997, pp. 344-348
Authors:
MARTIN RW
WONG SL
SYMONS DM
NICHOLAS RJ
GIBBON MA
THRUSH EJ
STAGG JP
Citation: Rw. Martin et al., SELECTIVE-AREA EPITAXY OF INGAAS INGAASP QUANTUM-WELLS STUDIED BY MAGNETOTRANSPORT/, Semiconductor science and technology, 11(5), 1996, pp. 735-740
Authors:
MARTIN RW
WONG SL
WARBURTON RJ
NICHOLAS RJ
SMITH AD
GIBBON MA
THRUSH EJ
Citation: Rw. Martin et al., VARIATIONS OF THE HOLE EFFECTIVE MASSES INDUCED BY TENSILE STRAIN IN IN1-XGAXAS(P) INGAASP HETEROSTRUCTURES/, Physical review. B, Condensed matter, 50(11), 1994, pp. 7660-7667
Authors:
FELLS JAJ
GIBBON MA
WHITE IH
THOMPSON GHB
PENTY RV
ARMISTEAD CJ
KIMBER EM
MOULE DJ
THRUSH EJ
Citation: Jaj. Fells et al., TRANSMISSION BEYOND THE DISPERSION LIMIT USING A NEGATIVE CHIRP ELECTROABSORPTION MODULATOR, Electronics Letters, 30(14), 1994, pp. 1168-1169
Authors:
MARTIN RW
WONG SL
NICHOLAS RJ
SMITH A
GIBBON MA
THRUSH EJ
STAGG JP
Citation: Rw. Martin et al., BAND OFFSETS IN STRAINED INGAASP INGAASP QUANTUM-WELL OPTICAL MODULATOR STRUCTURES/, Journal de physique. IV, 3(C5), 1993, pp. 327-330
Authors:
THRUSH EJ
STAGG JP
GIBBON MA
MALLARD RE
HAMILTON B
JOWETT JM
ALLEN EM
Citation: Ej. Thrush et al., SELECTIVE AND NONPLANAR EPITAXY OF INP GAINAS(P) BY MOCVD/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 130-146
Authors:
MALLARD RE
THRUSH EJ
GIBBON MA
BOOKER GR
Citation: Re. Mallard et al., CHARACTERIZATION OF THE CRYSTALLOGRAPHIC DEFECT STRUCTURE IN SELECTED-AREA EPITAXIAL-GROWTH OF GAINAS ON INP BY METALLOORGANIC CHEMICAL-VAPOR-DEPOSITION, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 48-52
Authors:
DAVIES GJ
THRUSH EJ
Citation: Gj. Davies et Ej. Thrush, SPECIAL ISSUE - SELECTIVE-AREA EPITAXY, NONPLANAR EPITAXY AND INTEGRATION TECHNOLOGY - FOREWORD, Semiconductor science and technology, 8(6), 1993, pp. 959-959
Authors:
GIBBON M
STAGG JP
CURETON CG
THRUSH EJ
JONES CJ
MALLARD RE
PRITCHARD RE
COLLIS N
CHEW A
Citation: M. Gibbon et al., SELECTIVE-AREA LOW-PRESSURE MOCVD OF GAINASP AND RELATED MATERIALS ONPLANAR INP SUBSTRATES, Semiconductor science and technology, 8(6), 1993, pp. 998-1010
Authors:
MALLARD RE
THRUSH EJ
MARTIN RW
WONG SL
NICHOLAS RJ
PRITCHARD RE
HAMILTON B
LONG NJ
GALLOWAY SA
CHEW A
SYKES DE
THOMPSON J
SCARROTT K
JOWETT JM
SATZKE K
NORMAN AG
BOOKER GR
Citation: Re. Mallard et al., THE CONTROL AND EVALUATION OF BLUE-SHIFT IN GAINAS GAINASP MULTIPLE-QUANTUM-WELL STRUCTURES FOR INTEGRATED LASERS AND STARK-EFFECT MODULATORS/, Semiconductor science and technology, 8(6), 1993, pp. 1156-1165
Authors:
MARTIN RW
WONG SL
NICHOLAS RJ
SATZKE K
GIBBON M
THRUSH EJ
Citation: Rw. Martin et al., THE DESIGN OF QUANTUM-CONFINED STARK-EFFECT MODULATORS FOR INTEGRATION WITH 1.55 MU-M LASERS, Semiconductor science and technology, 8(6), 1993, pp. 1173-1178
Authors:
MALLARD RE
LONG NJ
THRUSH EJ
SCARROTT K
NORMAN AG
BOOKER GR
Citation: Re. Mallard et al., TRANSMISSION ELECTRON-MICROSCOPY AND SCANNING-TRANSMISSION ELECTRON-MICROSCOPE ANALYSIS OF THE EFFECTS OF THERMAL-PROCESSING ON THE STRUCTURAL INTEGRITY OF GAINAS GAINASP MULTILAYERS/, Journal of applied physics, 73(9), 1993, pp. 4297-4304
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