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Results:
1-15
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Results: 15
Authors:
KOBAYASHI H
YUASA T
YAMANAKA K
YONEDA K
TODOKORO Y
Citation: H. Kobayashi et al., MECHANISM OF PLATINUM-ENHANCED OXIDATION OF SILICON AT LOW-TEMPERATURES, The Journal of chemical physics, 109(12), 1998, pp. 4997-5001
Authors:
KOBAYASHI H
ASANO A
ASADA S
KUBOTA T
YAMASHITA Y
YONEDA K
TODOKORO Y
Citation: H. Kobayashi et al., STUDIES ON INTERFACE STATES AT ULTRATHIN SIO2 SI(100) INTERFACES BY MEANS OF X-RAY PHOTOELECTRON-SPECTROSCOPY UNDER BIASES AND THEIR PASSIVATION BY CYANIDE TREATMENT/, Journal of applied physics, 83(4), 1998, pp. 2098-2103
Authors:
KOBAYASHI H
YAMASHITA Y
NAMBA K
TODOKORO Y
Citation: H. Kobayashi et al., A NEW METHOD FOR THE GROWTH OF SILICON-OXIDE LAYERS BELOW 300-DEGREES-C BY USE OF CATALYTIC ACTIVITY OF PLATINUM OVERLAYERS, Applied surface science, 108(4), 1997, pp. 433-438
Authors:
KOBAYASHI H
MIZOKURO T
NAKATO Y
YONEDA K
TODOKORO Y
Citation: H. Kobayashi et al., NITRIDATION OF SILICON-OXIDE LAYERS BY NITROGEN PLASMA GENERATED BY LOW-ENERGY-ELECTRON IMPACT, Applied physics letters, 71(14), 1997, pp. 1978-1980
Authors:
KUBO H
NAMURA T
YONEDA K
OHISHI H
TODOKORO Y
Citation: H. Kubo et al., QUANTITATIVE CHARGE BUILDUP EVALUATION TECHNIQUE BY USING MOS CAPACITORS WITH CHARGE COLLECTING ELECTRODES IN WAFER PROCESSING, IEICE transactions on electronics, E79C(2), 1996, pp. 198-205
Authors:
KOBAYASHI H
YUASA T
NAKATO Y
YONEDA K
TODOKORO Y
Citation: H. Kobayashi et al., LOW-TEMPERATURE CATALYTIC FORMATION OF SI-BASED METAL-OXIDE-SEMICONDUCTOR STRUCTURE, Journal of applied physics, 80(7), 1996, pp. 4124-4128
Authors:
YONEDA K
HAGIWARA K
TODOKORO Y
Citation: K. Yoneda et al., THE INFLUENCE OF MEDIUM DOSE ION-IMPLANTATION ON THE RELIABILITY OF THIN GATE OXIDE, Journal of the Electrochemical Society, 142(5), 1995, pp. 1619-1625
Authors:
YONEDA K
OKUMA K
HAGIWARA K
TODOKORO Y
Citation: K. Yoneda et al., THE RELIABILITY EVALUATION OF THIN SILICON DIOXIDE USING THE STEPPED CURRENT TDDB TECHNIQUE, Journal of the Electrochemical Society, 142(2), 1995, pp. 596-600
Authors:
YONEDA K
HAGIWARA K
OISHI H
TODOKORO Y
Citation: K. Yoneda et al., THE DIELECTRIC-BREAKDOWN CHARACTERISTICS OF THIN SILICON DIOXIDE PREPARED BY TRANS-1,2-DICHLOROETHYLENE ADDED OXIDATION, Journal of the Electrochemical Society, 142(12), 1995, pp. 4304-4309
Authors:
KAWAHARA H
YONEDA K
MUROZONO I
TODOKORO Y
Citation: H. Kawahara et al., REMOVAL OF PARTICLES ON SI WAFERS IN SC-1 SOLUTION, IEICE transactions on electronics, E77C(3), 1994, pp. 492-497
Authors:
TANI Y
MITO H
OKUDA Y
TODOKORO Y
TATSUTA T
SAWAI M
TSUJI O
Citation: Y. Tani et al., OPTIMIZATION OF AMORPHOUS CARBON-DEPOSITED ANTIREFLECTIVE LAYER FOR ADVANCED LITHOGRAPHY, JPN J A P 1, 32(12B), 1993, pp. 5909-5913
Authors:
WATANABE H
TODOKORO Y
Citation: H. Watanabe et Y. Todokoro, PHASE-SHIFTING LITHOGRAPHY - MASKMAKING AND ITS APPLICATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2669-2674
Authors:
WATANABE H
SUGIURA E
IMORIYA T
TODOKORO Y
INOUE M
Citation: H. Watanabe et al., REPAIR TECHNIQUE FOR PHASE-SHIFTING MASKS USING SILICON-CONTAINING RESIST, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2211-2215
Authors:
YONEDA K
TODOKORO Y
INOUE M
Citation: K. Yoneda et al., TOP-OXIDATION EFFECTS ON THE RELIABILITY OF OXIDE-NITRIDE-OXIDE STACKED FILM, Journal of the Electrochemical Society, 140(10), 1993, pp. 2975-2981
Authors:
OOKAWA T
TODOKORO Y
ISHIHARA K
Citation: T. Ookawa et al., CHANGES IN PHYSICAL AND CHEMICAL CHARACTE RISTICS OF CULM ASSOCIATED WITH LODGING RESISTANCE IN PADDY RICE UNDER DIFFERENT GROWTH-CONDITIONS AND VARIETAL DIFFERENCE OF THEIR CHANGES, Nippon Sakumotsu Gakkai Kiji, 62(4), 1993, pp. 525-533
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1-15
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