ACNP - Italian Periodicals Catalogue

AAAAAA

ITA
ENG

Results: 1-25 | 26-50 | 51-66

Results: 1-25/66

SIDEWALL SLOPE CONTROL OF CHEMICALLY ASSISTED ION-BEAM ETCHED STRUCTURES IN INP-BASED MATERIALS

Authors: DALEIDEN J CZOTSCHER K HOFFMANN C KIEFER R KLUSSMANN S MULLER S NUTSCH A PLETSCHEN W WEISSER S TRANKLE G BRAUNSTEIN J WEIMANN G

Citation: J. Daleiden et al., SIDEWALL SLOPE CONTROL OF CHEMICALLY ASSISTED ION-BEAM ETCHED STRUCTURES IN INP-BASED MATERIALS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1864-1866

PHOTOGALVANIC EFFECT IN ASYMMETRIC QUANTUM-WELLS AND SUPERLATTICES

Authors: SCHNEIDER H EHRET S SCHONBEIN C SCHWARZ K BIHLMANN G FLEISSNER J TRANKLE G BOHM G

Citation: H. Schneider et al., PHOTOGALVANIC EFFECT IN ASYMMETRIC QUANTUM-WELLS AND SUPERLATTICES, Superlattices and microstructures, 23(6), 1998, pp. 1289-1295

NONRADIATIVE CURRENT IN INGAAS ALGAAS LASER-DIODES AS A MEASURE OF FACET STABILITY/

Authors: BEISTER G MAEGE J ERBERT G TRANKLE G

Citation: G. Beister et al., NONRADIATIVE CURRENT IN INGAAS ALGAAS LASER-DIODES AS A MEASURE OF FACET STABILITY/, Solid-state electronics, 42(11), 1998, pp. 1939-1945

CHEMICAL BEAM EPITAXY OF INTEGRATED 1.55 MU-M LASERS ON EXACT AND MISORIENTED (100)-INP SUBSTRATES

Authors: NUTSCH A DAHLHEIMER B DOHR N KRATZER H LUKAS R TORABI B TRANKLE G ABSTREITER G WEIMANN G

Citation: A. Nutsch et al., CHEMICAL BEAM EPITAXY OF INTEGRATED 1.55 MU-M LASERS ON EXACT AND MISORIENTED (100)-INP SUBSTRATES, Journal of crystal growth, 188(1-4), 1998, pp. 275-280

CHEMICAL BEAM EPITAXY OF GAINASP FOR LONG-WAVELENGTH LASERS

Authors: NUTSCH A KRATZER H TORABI B TRANKLE G ABSTREITER G WEIMANN G

Citation: A. Nutsch et al., CHEMICAL BEAM EPITAXY OF GAINASP FOR LONG-WAVELENGTH LASERS, Journal of crystal growth, 183(4), 1998, pp. 505-510

MOVPE GROWTH OF HIGHLY STRAINED INGAAS GAAS QUANTUM-WELLS/

Authors: BUGGE F ZEIMER U SATO M WEYERS M TRANKLE G

Citation: F. Bugge et al., MOVPE GROWTH OF HIGHLY STRAINED INGAAS GAAS QUANTUM-WELLS/, Journal of crystal growth, 183(4), 1998, pp. 511-518

DESIGN AND FABRICATION OF DOUBLE-MODULATION DOPED INALAS INGAAS/INAS HETEROJUNCTION FETS FOR HIGH-SPEED AND MILLIMETER-WAVE APPLICATIONS/

Authors: XU D HEISS HG KRAUS SA SEXL M BOHM G TRANKLE G WEIMANN G ABSTREITER G

Citation: D. Xu et al., DESIGN AND FABRICATION OF DOUBLE-MODULATION DOPED INALAS INGAAS/INAS HETEROJUNCTION FETS FOR HIGH-SPEED AND MILLIMETER-WAVE APPLICATIONS/, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 21-30

10.15MM DOUBLE-MODULATION DOPED INAS-INSERTED-CHANNEL MODFETS - GATE RECESS FOR OPTIMUM RF PERFORMANCES (VOL 33, PG 532, 1997)

Authors: XU D HEISS H KRAUS S SEXL M BOHM G TRANKLE G WEIMANN G ABSTREITER G

Citation: D. Xu et al., 10.15MM DOUBLE-MODULATION DOPED INAS-INSERTED-CHANNEL MODFETS - GATE RECESS FOR OPTIMUM RF PERFORMANCES (VOL 33, PG 532, 1997), Electronics Letters, 34(7), 1998, pp. 703-704

ADVANTAGES OF AL-FREE GAINP INGAAS PHEMTS FOR POWER APPLICATIONS/

Authors: CHERTOUK M BURKNER S BACHEM K PLETSCHEN W KRAUS S BRAUNSTEIN J TRANKLE G

Citation: M. Chertouk et al., ADVANTAGES OF AL-FREE GAINP INGAAS PHEMTS FOR POWER APPLICATIONS/, Electronics Letters, 34(6), 1998, pp. 590-592

CBE GROWN (GAIN)(ASP) LASER-DIODES FOR MONOLITHIC INTEGRATION

Authors: KRATZER H NUTSCH A TORABI B TRANKLE G WEIMANN G

Citation: H. Kratzer et al., CBE GROWN (GAIN)(ASP) LASER-DIODES FOR MONOLITHIC INTEGRATION, JPN J A P 1, 36(3B), 1997, pp. 1880-1883

2S MM TRANSCONDUCTANCE INAS-INSERTED-CHANNEL MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH A VERY CLOSE GATE-TO-CHANNEL SEPARATION OF 14.5NM/

Authors: XU D HEISS H SEXL M KRAUS S BOHM G TRANKLE G WEIMANN G ABSTREITER G

Citation: D. Xu et al., 2S MM TRANSCONDUCTANCE INAS-INSERTED-CHANNEL MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH A VERY CLOSE GATE-TO-CHANNEL SEPARATION OF 14.5NM/, JPN J A P 2, 36(4B), 1997, pp. 470-472

PHOTOREFLECTANCE MEASUREMENTS IN GAAS ALGAAS ASYMMETRIC QUANTUM-WELLS/

Authors: SOLER MAG DEPEYROT J MORAIS PC SOARES JANT SCOLFARO LMR DASILVA ECF ENDERLEIN R WEIMANN G TRANKLE G

Citation: Mag. Soler et al., PHOTOREFLECTANCE MEASUREMENTS IN GAAS ALGAAS ASYMMETRIC QUANTUM-WELLS/, Superlattices and microstructures, 21(4), 1997, pp. 581-585

HIGH-PERFORMANCE DOUBLE-MODULATION-DOPED INALAS INGAAS/INAS HFETS/

Authors: XU D HEISS H KRAUS S SEXL M BOHM G TRANKLE G WEIMANN G ABSTREITER G

Citation: D. Xu et al., HIGH-PERFORMANCE DOUBLE-MODULATION-DOPED INALAS INGAAS/INAS HFETS/, IEEE electron device letters, 18(7), 1997, pp. 323-326

ULTRAFAST RABI OSCILLATIONS OF FREE-CARRIER TRANSITIONS IN INP

Authors: FURST C LEITENSTORFER A NUTSCH A TRANKLE G ZRENNER A

Citation: C. Furst et al., ULTRAFAST RABI OSCILLATIONS OF FREE-CARRIER TRANSITIONS IN INP, Physica status solidi. b, Basic research, 204(1), 1997, pp. 20-22

MBE GROWTH OF DOUBLE-SIDED DOPED INALAS INGAAS HEMTS WITH AN INAS LAYER INSERTED IN THE CHANNEL/

Authors: SEXL M BOHM G XU D HEISS H KRAUS S TRANKLE G WEIMANN G

Citation: M. Sexl et al., MBE GROWTH OF DOUBLE-SIDED DOPED INALAS INGAAS HEMTS WITH AN INAS LAYER INSERTED IN THE CHANNEL/, Journal of crystal growth, 175, 1997, pp. 915-918

CBE OF 1.55 MU-M (GAIN)(ASP) LASERS FOR MONOLITHIC INTEGRATION

Authors: NUTSCH A TORABI B KRATZER H TRANKLE G WEIMANN G

Citation: A. Nutsch et al., CBE OF 1.55 MU-M (GAIN)(ASP) LASERS FOR MONOLITHIC INTEGRATION, Journal of crystal growth, 175, 1997, pp. 1200-1204

0.15-MU-M DOUBLE-MODULATION DOPED INAS-INSERTED-CHANNEL MODFETS - GATE RECESS FOR OPTIMUM RF PERFORMANCES

Authors: XU D HEISS H KRAUS S SEXL M BOHM G TRANKLE G WEIMANN G ABSTREITER G

Citation: D. Xu et al., 0.15-MU-M DOUBLE-MODULATION DOPED INAS-INSERTED-CHANNEL MODFETS - GATE RECESS FOR OPTIMUM RF PERFORMANCES, Electronics Letters, 33(6), 1997, pp. 532-533

STUDY OF COMPOSITION AND CRITICAL-POINT BROADENING IN INAS GA1-XINXSBSUPERLATTICES USING SPECTROSCOPIC ELLIPSOMETRY/

Authors: WAGNER J SCHMITZ J HERRES N TRANKLE G KOIDL P

Citation: J. Wagner et al., STUDY OF COMPOSITION AND CRITICAL-POINT BROADENING IN INAS GA1-XINXSBSUPERLATTICES USING SPECTROSCOPIC ELLIPSOMETRY/, Applied physics letters, 70(11), 1997, pp. 1456-1458

MONOLITHIC INTEGRATION OF GAAS-ALGAAS QUANTUM-WELL LASERS WITH DIRECTIONAL-COUPLERS USING VERTICAL COUPLING OF LIGHT

Authors: BOCHE B MULLER R BOHM G TRANKLE G WEIMANN G

Citation: B. Boche et al., MONOLITHIC INTEGRATION OF GAAS-ALGAAS QUANTUM-WELL LASERS WITH DIRECTIONAL-COUPLERS USING VERTICAL COUPLING OF LIGHT, IEEE photonics technology letters, 8(12), 1996, pp. 1591-1593

MICROWAVE MODULATION OF COULOMB-BLOCKADE OSCILLATIONS IN A QUANTUM-DOT

Authors: FUJII K GODEL W WHARAM DA MANUS S KOTTHAUS JP BOHM G KLEIN W TRANKLE G WEIMANN G

Citation: K. Fujii et al., MICROWAVE MODULATION OF COULOMB-BLOCKADE OSCILLATIONS IN A QUANTUM-DOT, Physica. B, Condensed matter, 227(1-4), 1996, pp. 98-101

STARK-LADDER TRANSITION IN A (GAAS)(5) (ALAS)(2) ZENER TUNNELING DIODE/

Authors: NAGASAWA H MURAYAMA K MORIFUJI M DICARLO A VOGL P BOHM G TRANKLE G WEIMANN G HAMAGUCHI C

Citation: H. Nagasawa et al., STARK-LADDER TRANSITION IN A (GAAS)(5) (ALAS)(2) ZENER TUNNELING DIODE/, Physica. B, Condensed matter, 227(1-4), 1996, pp. 206-209

METAMORPHIC INALAS INGAAS HEMTS ON GAAS SUBSTRATES WITH COMPOSITE CHANNELS AND 350-GHZ F(MAX) WITH 160-GHZ F(T)/

Authors: CHERTOUK M HEISS H XU D KRAUS S KLEIN W BOHM G TRANKLE G WEIMANN G

Citation: M. Chertouk et al., METAMORPHIC INALAS INGAAS HEMTS ON GAAS SUBSTRATES WITH COMPOSITE CHANNELS AND 350-GHZ F(MAX) WITH 160-GHZ F(T)/, Microwave and optical technology letters, 11(3), 1996, pp. 145-147

METAMORPHIC INALAS INGAAS HEMTS ON GAAS SUBSTRATES WITH A NOVEL COMPOSITE CHANNELS DESIGN/

Authors: CHERTOUK M HEISS H XU D KRAUS S KLEIN W BOHM G TRANKLE G WEIMANN G

Citation: M. Chertouk et al., METAMORPHIC INALAS INGAAS HEMTS ON GAAS SUBSTRATES WITH A NOVEL COMPOSITE CHANNELS DESIGN/, IEEE electron device letters, 17(6), 1996, pp. 273-275

WANNIER-STARK OSCILLATIONS IN ZENER TUNNELING CURRENTS

Authors: NAGASAWA H MURAYAMA K YAMAGUCHI M MORIFUJI M HAMAGUCHI C DICARLO A VOGL P BOHM G TRANKLE G WEIMANN G

Citation: H. Nagasawa et al., WANNIER-STARK OSCILLATIONS IN ZENER TUNNELING CURRENTS, Solid-state electronics, 40(1-8), 1996, pp. 245-247

FEMTOSECOND CARRIER DYNAMICS IN GAAS FAR FROM EQUILIBRIUM

Authors: LEITENSTORFER A FURST C LAUBEREAU A KAISER W TRANKLE G WEIMANN G

Citation: A. Leitenstorfer et al., FEMTOSECOND CARRIER DYNAMICS IN GAAS FAR FROM EQUILIBRIUM, Physical review letters, 76(9), 1996, pp. 1545-1548

Risultati: 1-25 | 26-50 | 51-66