Citation: Rj. Trew, EXPERIMENTAL AND SIMULATED RESULTS OF SIC MICROWAVE-POWER MESFETS, Physica status solidi. a, Applied research, 162(1), 1997, pp. 409-419
Citation: Rj. Trew, A PUBLICATION OF THE IEEE-MICROWAVE-THEORY-AND-TECHNIQUES-SOCIETY, IEEE transactions on microwave theory and techniques, 44(1), 1996, pp. 1-3
Citation: Mw. Shin et al., TEMPERATURE-DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE DIAMOND FETS - MODELING AND EXPERIMENT, Journal of materials science. Materials in electronics, 6(2), 1995, pp. 111-114
Citation: Mw. Shin et al., HIGH-TEMPERATURE DC AND RF PERFORMANCE OF P-TYPE DIAMOND MESFET - COMPARISON WITH N-TYPE GAAS-MESFET, IEEE electron device letters, 15(8), 1994, pp. 292-294
Citation: Ta. Winslow et Rj. Trew, PRINCIPLES OF LARGE-SIGNAL MESFET OPERATION, IEEE transactions on microwave theory and techniques, 42(6), 1994, pp. 935-942
Authors:
WOOLARD DL
TIAN H
LITTLEJOHN MA
KIM KW
TREW RJ
LEONG MK
TANG TW
Citation: Dl. Woolard et al., CONSTRUCTION OF HIGHER-MOMENT TERMS IN THE HYDRODYNAMIC ELECTRON-TRANSPORT MODEL, Journal of applied physics, 74(10), 1993, pp. 6197-6207
Authors:
WOOLARD DL
TIAN H
LITTLEJOHN MA
TREW RJ
KIM KW
Citation: Dl. Woolard et al., IMPACT OF K-SPACE TRANSFER AND BAND NONPARABOLICITY ON ELECTRON-TRANSPORT IN A GAAS BALLISTIC DIODE, Semiconductor science and technology, 7(3B), 1992, pp. 354-356