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Results:
1-16
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Results: 16
Authors:
CAPANO MA
TREW RJ
Citation: Ma. Capano et Rj. Trew, SILICON-CARBIDE ELECTRONIC MATERIALS AND DEVICES, MRS bulletin, 22(3), 1997, pp. 19-22
Authors:
MOORE K
TREW RJ
Citation: K. Moore et Rj. Trew, RADIOFREQUENCY POWER TRANSISTORS BASED ON 6H-SIC AND 4H-SIC, MRS bulletin, 22(3), 1997, pp. 50-56
Authors:
TREW RJ
SHIN MW
GATTO V
Citation: Rj. Trew et al., HIGH-POWER APPLICATIONS FOR GAN-BASED DEVICES, Solid-state electronics, 41(10), 1997, pp. 1561-1567
Authors:
TREW RJ
Citation: Rj. Trew, EXPERIMENTAL AND SIMULATED RESULTS OF SIC MICROWAVE-POWER MESFETS, Physica status solidi. a, Applied research, 162(1), 1997, pp. 409-419
Authors:
TREW RJ
Citation: Rj. Trew, UNTITLED, IEEE transactions on microwave theory and techniques, 45(1), 1997, pp. 1-1
Authors:
TREW RJ
Citation: Rj. Trew, A PUBLICATION OF THE IEEE-MICROWAVE-THEORY-AND-TECHNIQUES-SOCIETY, IEEE transactions on microwave theory and techniques, 44(1), 1996, pp. 1-3
Authors:
SHIN MW
TREW RJ
BILBRO GL
DREIFUS DL
TESSMER AJ
Citation: Mw. Shin et al., TEMPERATURE-DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE DIAMOND FETS - MODELING AND EXPERIMENT, Journal of materials science. Materials in electronics, 6(2), 1995, pp. 111-114
Authors:
SHIN MW
TREW RJ
Citation: Mw. Shin et Rj. Trew, GAN MESFETS FOR HIGH-POWER AND HIGH-TEMPERATURE MICROWAVE APPLICATIONS, Electronics Letters, 31(6), 1995, pp. 498-500
HIGH-TEMPERATURE DC AND RF PERFORMANCE OF P-TYPE DIAMOND MESFET - COMPARISON WITH N-TYPE GAAS-MESFET
Authors:
SHIN MW
TREW RJ
BILBRO GL
Citation: Mw. Shin et al., HIGH-TEMPERATURE DC AND RF PERFORMANCE OF P-TYPE DIAMOND MESFET - COMPARISON WITH N-TYPE GAAS-MESFET, IEEE electron device letters, 15(8), 1994, pp. 292-294
Authors:
SLATER DB
ENQUIST PM
HUTCHBY JA
MORRIS AS
TREW RJ
Citation: Db. Slater et al., LOW EMITTER RESISTANCE GAAS BASED HBTS WITHOUT INGAAS CAPS, IEEE electron device letters, 15(5), 1994, pp. 154-156
Authors:
SLATER DB
ENQUIST PM
HUTCHBY JA
MORRIS AS
TREW RJ
Citation: Db. Slater et al., PNP HBT WITH 66 GHZ F(MAX), IEEE electron device letters, 15(3), 1994, pp. 91-93
Authors:
WINSLOW TA
TREW RJ
Citation: Ta. Winslow et Rj. Trew, PRINCIPLES OF LARGE-SIGNAL MESFET OPERATION, IEEE transactions on microwave theory and techniques, 42(6), 1994, pp. 935-942
Authors:
SLATER DB
ENQUIST PM
HUTCHBY JA
REED FE
MORRIS AS
KOLBAS RM
TREW RJ
LUJAN AS
SWART JW
Citation: Db. Slater et al., MONOLITHICALLY INTEGRATED SQW LASER AND HBT LASER DRIVER VIA SELECTIVE OMVPE REGROWTH, IEEE photonics technology letters, 5(7), 1993, pp. 791-794
Authors:
ENQUIST PM
SLATER DB
HUTCHBY JA
MORRIS AS
TREW RJ
Citation: Pm. Enquist et al., SELF-ALIGNED ALGAAS GAAS HBT WITH SELECTIVELY REGROWN OMVPE EMITTER/, IEEE electron device letters, 14(6), 1993, pp. 295-297
Authors:
WOOLARD DL
TIAN H
LITTLEJOHN MA
KIM KW
TREW RJ
LEONG MK
TANG TW
Citation: Dl. Woolard et al., CONSTRUCTION OF HIGHER-MOMENT TERMS IN THE HYDRODYNAMIC ELECTRON-TRANSPORT MODEL, Journal of applied physics, 74(10), 1993, pp. 6197-6207
Authors:
WOOLARD DL
TIAN H
LITTLEJOHN MA
TREW RJ
KIM KW
Citation: Dl. Woolard et al., IMPACT OF K-SPACE TRANSFER AND BAND NONPARABOLICITY ON ELECTRON-TRANSPORT IN A GAAS BALLISTIC DIODE, Semiconductor science and technology, 7(3B), 1992, pp. 354-356
Risultati:
1-16
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