Authors: TSOUKALAS D TSAMIS C KOUVATSOS DN REVVA P TSOI E

Citation: D. Tsoukalas et al., REDUCTION OF THE REVERSE SHORT-CHANNEL EFFECT IN THICK SOI MOSFETS, IEEE electron device letters, 18(3), 1997, pp. 90-92

Authors: TSAMIS C KOUVATSOS DN TSOUKALAS D

Citation: C. Tsamis et al., INFLUENCE OF N2O OXIDATION OF SILICON ON POINT-DEFECT INJECTION KINETICS IN THE HIGH-TEMPERATURE REGIME, Applied physics letters, 69(18), 1996, pp. 2725-2727

Authors: TSAMIS C TSOUKALAS D NORMAND P

Citation: C. Tsamis et al., DECREASE OF THE LATERAL DISTRIBUTION OF INTERSTITIALS IN SILICON-ON-INSULATOR STRUCTURES, Microelectronic engineering, 28(1-4), 1995, pp. 463-466

Authors: TSOUKALAS D TSAMIS C

Citation: D. Tsoukalas et C. Tsamis, INVESTIGATION OF THE DISTRIBUTION OF SILICON INTERSTITIALS IN SILICONAND SILICON-ON-INSULATOR STRUCTURES AFTER THERMAL-OXIDATION, Applied physics letters, 66(8), 1995, pp. 971-973

Authors: TSAMIS C TSOUKALAS D GUILLEMOT N

Citation: C. Tsamis et al., SILICON INTERSTITIAL REACTIONS WITH THERMALLY GROWN SILICON DIOXIDE, Microelectronic engineering, 22(1-4), 1993, pp. 363-366

Authors: TSOUKALAS D TSAMIS C STOEMENOS J

Citation: D. Tsoukalas et al., INVESTIGATION OF SILICON INTERSTITIAL REACTIONS WITH INSULATING FILMSUSING THE SILICON-WAFER BONDING TECHNIQUE, Applied physics letters, 63(23), 1993, pp. 3167-3169