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Results: 1-25/42
Authors:
FEURPRIER Y
CARDINAUD C
TURBAN G
Citation: Y. Feurprier et al., X-RAY PHOTOELECTRON-SPECTROSCOPY DAMAGE CHARACTERIZATION OF REACTIVELY ION ETCHED INP IN CH4-H-2 PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1823-1832
Authors:
ZARRABIAN M
LETEINTURIER C
TURBAN G
Citation: M. Zarrabian et al., MASS-SPECTROMETRIC INVESTIGATIONS ON CH4 PLASMAS OBTAINED FROM A DUALELECTRON-CYCLOTRON RESONANCE-RADIO FREQUENCY DISCHARGE, Plasma sources science & technology (Print), 7(4), 1998, pp. 607-616
Authors:
ZEINERT A
RACINE B
ZELLAMA K
ZARRABIAN M
TURBAN G
SADKI A
Citation: A. Zeinert et al., COMPARATIVE-STUDY OF THE OPTICAL AND STRUCTURAL-PROPERTIES OF A-C-H FILMS DEPOSITED BY CONVENTIONAL DIODE AND MICROWAVE ECR ASSISTED RF PLASMA METHODS, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 486-490
Authors:
FEURPRIER Y
CARDINAUD C
GROLLEAU B
TURBAN G
Citation: Y. Feurprier et al., PROPOSAL FOR AN ETCHING MECHANISM OF INP IN CH4-H-2 MIXTURES BASED ONPLASMA DIAGNOSTICS AND SURFACE-ANALYSIS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1552-1559
Authors:
NICOLAZO F
GOULLET A
GRANIER A
VALLEE C
TURBAN G
GROLLEAU B
Citation: F. Nicolazo et al., STUDY OF OXYGEN TEOS PLASMAS AND THIN SIOX FILMS OBTAINED IN AN HELICON DIFFUSION REACTOR/, Surface & coatings technology, 98(1-3), 1998, pp. 1578-1583
Authors:
GOGOLIDES E
VAUVERT P
RHALLABI A
TURBAN G
Citation: E. Gogolides et al., COMPLETE PLASMA PHYSICS, PLASMA CHEMISTRY, AND SURFACE-CHEMISTRY SIMULATION OF SIO2 AND SI ETCHING IN CF4 PLASMAS, Microelectronic engineering, 42, 1998, pp. 391-394
Authors:
TSEREPI A
GOGOLIDES E
CARDINAUD C
ROLLAND L
TURBAN G
Citation: A. Tserepi et al., HIGHLY ANISOTROPIC SILICON AND POLYSILICON ROOM-TEMPERATURE ETCHING USING FLUORINE-BASED HIGH-DENSITY PLASMAS, Microelectronic engineering, 42, 1998, pp. 411-414
Authors:
PARET V
SADKI A
BOUNOUH Y
ALAMEH R
NAUD C
ZARRABIAN M
SEIGNAC A
TURBAN G
THEYE ML
Citation: V. Paret et al., OPTICAL INVESTIGATIONS OF THE MICROSTRUCTURE OF HYDROGENATED AMORPHOUS-CARBON FILMS, Journal of non-crystalline solids, 230, 1998, pp. 583-587
Authors:
BHATTACHARYYA S
CARDINAUD C
TURBAN G
Citation: S. Bhattacharyya et al., SPECTROSCOPIC DETERMINATION OF THE STRUCTURE OF AMORPHOUS NITROGENATED CARBON-FILMS, Journal of applied physics, 83(8), 1998, pp. 4491-4500
Authors:
BHATTACHARYYA S
HONG J
TURBAN G
Citation: S. Bhattacharyya et al., DETERMINATION OF THE STRUCTURE OF AMORPHOUS NITROGENATED CARBON-FILMSBY COMBINED RAMAN AND X-RAY PHOTOEMISSION SPECTROSCOPY, Journal of applied physics, 83(7), 1998, pp. 3917-3919
Authors:
RACINE B
BENLAHSEN M
ZELLAMA K
GOUDEAU P
ZARRABIAN M
TURBAN G
Citation: B. Racine et al., EFFECT OF THE HYDROGEN ON THE INTRINSIC STRESS IN HYDROGENATED AMORPHOUS-CARBON FILMS DEPOSITED FROM AN ELECTRON-CYCLOTRON-RESONANCE PLASMA, Applied physics letters, 73(22), 1998, pp. 3226-3228
Authors:
FEURPRIER Y
CARDINAUD C
TURBAN G
Citation: Y. Feurprier et al., INFLUENCE OF THE GAS-MIXTURE ON THE REACTIVE ION ETCHING OF INP IN CH4-H-2 PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1733-1740
Authors:
FEURPRIER Y
CARDINAUD C
GROLLEAU B
TURBAN G
Citation: Y. Feurprier et al., ETCH PRODUCT IDENTIFICATION DURING CH4-H-2 RIE OF INP USING MASS-SPECTROMETRY, Plasma sources science & technology, 6(4), 1997, pp. 561-568
SURFACE MODIFICATION AND ETCH PRODUCT DETECTION DURING REACTIVE ION ETCHING IN INP IN CH4-H-2 PLASMA
Authors:
FEURPRIER Y
CARDINAUD C
TURBAN G
Citation: Y. Feurprier et al., SURFACE MODIFICATION AND ETCH PRODUCT DETECTION DURING REACTIVE ION ETCHING IN INP IN CH4-H-2 PLASMA, Plasma sources science & technology, 6(3), 1997, pp. 334-342
Authors:
GRANIER A
NICOLAZO F
VALLEE C
GOULLET A
TURBAN G
GROLLEAU B
Citation: A. Granier et al., DIAGNOSTICS IN O-2 HELICON PLASMAS FOR SIO2 DEPOSITION, Plasma sources science & technology, 6(2), 1997, pp. 147-156
Authors:
ZARRABIAN M
FOURCHESCOULON N
TURBAN G
LANCIN M
MARHIC C
Citation: M. Zarrabian et al., EFFECT OF NEGATIVE BIAS VOLTAGE ON A-C-H FILMS DEPOSITED IN ELECTRON-CYCLOTRON-RESONANCE PLASMA, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 542-546
Authors:
CHEVOLLEAU T
TESSIER PY
CARDINAUD C
TURBAN G
Citation: T. Chevolleau et al., ETCHING OF SI AT LOW-TEMPERATURES USING A SF6 REACTIVE ION-BEAM - EFFECT OF THE ION ENERGY AND CURRENT-DENSITY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(5), 1997, pp. 2661-2669
Authors:
LEGOFF C
PEIGNON MC
TURBAN G
BILHANT R
Citation: C. Legoff et al., ASPECT RATIO EFFECTS IN SUBMICRON CONTACT HOLE PLASMA-ETCHING INVESTIGATED BY QUANTITATIVE X-RAY PHOTOELECTRON-SPECTROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 579-584
Authors:
PEIGNON MC
TURBAN G
CHARLES C
BOSWELL RW
Citation: Mc. Peignon et al., SURFACE MODELING OF REACTIVE ION ETCHING OF SILICON-GERMANIUM ALLOYS IN A SF6 PLASMA, Surface & coatings technology, 97(1-3), 1997, pp. 465-468
Authors:
CLENET F
BRIAUD P
TURBAN G
Citation: F. Clenet et al., EXPERIMENTAL-STUDY OF AN RF MAGNETRON DISCHARGE FOR THIN-FILM DEPOSITION, Surface & coatings technology, 97(1-3), 1997, pp. 528-532
Authors:
VALLEE C
GOULLET A
NICOLAZO F
GRANIER A
TURBAN G
Citation: C. Vallee et al., IN-SITU ELLIPSOMETRY AND INFRARED-ANALYSIS OF PECVD SIO2-FILMS DEPOSITED IN AN O-2 TEOS HELICON REACTOR/, Journal of non-crystalline solids, 216, 1997, pp. 48-54
Authors:
SIK H
FEURPRIER Y
CARDINAUD C
TURBAN G
SCAVENNEC A
Citation: H. Sik et al., REDUCTION OF RECOMBINATION VELOCITY ON GAAS SURFACE BY GA-S AND AS-S BOND-RELATED SURFACE-STATES FROM (NH4)(2)S-X TREATMENT, Journal of the Electrochemical Society, 144(6), 1997, pp. 2106-2115
Authors:
ZARRABIAN M
FOURCHESCOULON N
TURBAN G
MARHIC C
LANCIN M
Citation: M. Zarrabian et al., OBSERVATION OF NANOCRYSTALLINE DIAMOND IN DIAMOND-LIKE CARBON-FILMS DEPOSITED AT ROOM-TEMPERATURE IN ELECTRON-CYCLOTRON-RESONANCE PLASMA, Applied physics letters, 70(19), 1997, pp. 2535-2537
Authors:
RHALLABI A
GOGOLIDES E
TURBAN G
Citation: A. Rhallabi et al., MODELING OF PLASMA SURFACE INTERACTIONS, Le Vide, 52(280), 1996, pp. 185
Authors:
VIVENSANG C
FERLAZZOMANIN L
RAVET MF
TURBAN G
ROUSSEAUX F
GICQUEL A
Citation: C. Vivensang et al., SURFACE SMOOTHING OF DIAMOND MEMBRANES BY REACTIVE ION ETCHING PROCESS, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 840-844