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Results: 1-23 |
Results: 23
Effect of temperature on the emission characteristics of liquid metal alloy ion sources
Authors: Bischoff, L Teichert, J Ganetsos, T Mair, GLR
Citation: L. Bischoff et al., Effect of temperature on the emission characteristics of liquid metal alloy ion sources, J VAC SCI B, 19(1), 2001, pp. 76-78
Dwell-time dependence of irradiation damage in silicon
Authors: Bischoff, L Teichert, J Hausmann, S
Citation: L. Bischoff et al., Dwell-time dependence of irradiation damage in silicon, NUCL INST B, 178, 2001, pp. 165-169
Dose rate and temperature dependence of Ge range profiles in Si obtained by channeling implantation
Authors: Posselt, M Teichert, J Bischoff, L Hausmann, S
Citation: M. Posselt et al., Dose rate and temperature dependence of Ge range profiles in Si obtained by channeling implantation, NUCL INST B, 178, 2001, pp. 170-175
Ion acoustic microscopy for imaging of buried structures based on a focused ion beam system
Authors: Akhmadaliev, C Bischoff, L Teichert, J Kazbekov, K
Citation: C. Akhmadaliev et al., Ion acoustic microscopy for imaging of buried structures based on a focused ion beam system, MICROEL ENG, 57-8, 2001, pp. 659-664
A study of liquid metal alloy ion sources for the production of ions of interest in the microelectronics industry
Authors: Ganetsos, T Mair, GLR Bischoff, L Teichert, J Kioussis, D
Citation: T. Ganetsos et al., A study of liquid metal alloy ion sources for the production of ions of interest in the microelectronics industry, SOL ST ELEC, 45(6), 2001, pp. 1049-1054
Liquid metal ion source-produced germanium ions for maskless ion implantation (vol 34, pg L11, 2001)
Authors: Ganetsos, T Aidinis, C Bischoff, L Mair, GLR Teichert, J Panknin, D Papadopoulos, I
Citation: T. Ganetsos et al., Liquid metal ion source-produced germanium ions for maskless ion implantation (vol 34, pg L11, 2001), J PHYS D, 34(5), 2001, pp. 839-839
Liquid metal ion source-produced germanium ions for maskless ion implantation
Authors: Ganetsos, T Aidinis, C Bischoff, L Mair, GLR Teichert, J Panknin, D Papadopoulos, I
Citation: T. Ganetsos et al., Liquid metal ion source-produced germanium ions for maskless ion implantation, J PHYS D, 34(3), 2001, pp. L11-L13
Influence of dose rate and temperature on ion-beam-induced defect evolution in Si investigated by channeling implantation at different doses
Authors: Posselt, M Bischoff, L Teichert, J
Citation: M. Posselt et al., Influence of dose rate and temperature on ion-beam-induced defect evolution in Si investigated by channeling implantation at different doses, APPL PHYS L, 79(10), 2001, pp. 1444-1446
Micro-Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation
Authors: Teichert, J Bischoff, L Hausmann, S Voelskow, M Hobert, H
Citation: J. Teichert et al., Micro-Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation, APPL PHYS A, 71(2), 2000, pp. 175-180
Temperature dependence of emission spectra of liquid metal alloy ion sources
Authors: Bischoff, L Ganetsos, T Teichert, J Mair, GLR
Citation: L. Bischoff et al., Temperature dependence of emission spectra of liquid metal alloy ion sources, NUCL INST B, 164, 2000, pp. 999-1003
Investigation and optimization of the emission parameters of alloy liquid metal ion sources
Authors: Bischoff, L Teichert, J Hausmann, S Ganetsos, T Mair, GLR
Citation: L. Bischoff et al., Investigation and optimization of the emission parameters of alloy liquid metal ion sources, NUCL INST B, 161, 2000, pp. 1128-1131
Temperature and energy spread investigations of alloy LMIS
Authors: Bischoff, L Teichert, J Hausmann, S Ganetsos, T Mair, GLR
Citation: L. Bischoff et al., Temperature and energy spread investigations of alloy LMIS, MICROEL ENG, 53(1-4), 2000, pp. 613-616
Raman investigation of lattice defects in the CoSi2 synthesis using focused ion beam implantation
Authors: Teichert, J Hobert, H Bischoff, L Hausmann, S
Citation: J. Teichert et al., Raman investigation of lattice defects in the CoSi2 synthesis using focused ion beam implantation, MICROEL ENG, 50(1-4), 2000, pp. 187-192
Temperature dependence of the electric characteristics of liquid metal alloy ion sources
Authors: Bischoff, L Teichert, J Ganetsos, T Mair, GLR
Citation: L. Bischoff et al., Temperature dependence of the electric characteristics of liquid metal alloy ion sources, J PHYS D, 33(6), 2000, pp. 692-695
Doubly-charged ions from liquid metal alloy ion sources: direct field-evaporation or post-ionization?
Authors: Mair, GLR Ganetsos, T Bischoff, L Teichert, J
Citation: Glr. Mair et al., Doubly-charged ions from liquid metal alloy ion sources: direct field-evaporation or post-ionization?, J PHYS D, 33(17), 2000, pp. L86-L89
Liquid metal ion source working with an Er70Fe22Cr5Ni3 alloy
Authors: Bischoff, L Teichert, J
Citation: L. Bischoff et J. Teichert, Liquid metal ion source working with an Er70Fe22Cr5Ni3 alloy, J PHYS D, 33(13), 2000, pp. L69-L71
Dwell-time related effects in focused ion beam synthesis of cobalt disilicide
Authors: Hausmann, S Bischoff, L Teichert, J Voelskow, M Moller, W
Citation: S. Hausmann et al., Dwell-time related effects in focused ion beam synthesis of cobalt disilicide, J APPL PHYS, 87(1), 2000, pp. 57-62
Single-crystalline CoSi2 layer formation by focused ion beam synthesis
Authors: Hausmann, S Bischoff, L Teichert, J Voelskow, M Moller, W
Citation: S. Hausmann et al., Single-crystalline CoSi2 layer formation by focused ion beam synthesis, JPN J A P 1, 38(12B), 1999, pp. 7148-7150
Electron emission characteristics of solidified gold alloy liquid metal ion sources
Authors: Knapp, W Bischoff, L Teichert, J
Citation: W. Knapp et al., Electron emission characteristics of solidified gold alloy liquid metal ion sources, APPL SURF S, 146(1-4), 1999, pp. 134-137
Dwell-time effects in focused ion beam synthesis of cobalt disilicide: reflectivity measurements
Authors: Hausmann, S Bischoff, L Voelskow, M Teichert, J Moller, W Fuhrmann, H
Citation: S. Hausmann et al., Dwell-time effects in focused ion beam synthesis of cobalt disilicide: reflectivity measurements, NUCL INST B, 148(1-4), 1999, pp. 610-614
Dwell-time dependence of the defect accumulation in focused ion beam synthesis of CoSi2
Authors: Bischoff, L Hausmann, S Voelskow, M Teichert, J
Citation: L. Bischoff et al., Dwell-time dependence of the defect accumulation in focused ion beam synthesis of CoSi2, NUCL INST B, 147(1-4), 1999, pp. 327-331
Generation and detection of fluorescent color centers in diamond with submicron resolution
Authors: Martin, J Wannemacher, R Teichert, J Bischoff, L Kohler, B
Citation: J. Martin et al., Generation and detection of fluorescent color centers in diamond with submicron resolution, APPL PHYS L, 75(20), 1999, pp. 3096-3098
Investigations on the pharmacokinetics of alpha-lipoic acid in healthy volunteers
Authors: Teichert, J Kern, J Tritscher, HJ Ulrich, H Preiss, R
Citation: J. Teichert et al., Investigations on the pharmacokinetics of alpha-lipoic acid in healthy volunteers, INT J CL PH, 36(12), 1998, pp. 625-628
Risultati: 1-23 |