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Results: 1-25 | 26-40
Results: 1-25/40
Magnetoresistance in a stripe-shaped two-dimensional electron gas
Authors: Bykov, AA Gusev, GM Leite, JR Moshegov, NT Bakarov, AK Toropov, AI Maude, DK Portal, JC
Citation: Aa. Bykov et al., Magnetoresistance in a stripe-shaped two-dimensional electron gas, PHYSICA B, 298(1-4), 2001, pp. 79-82
IQHE and FQHE in a wire with incompressible and compressible strips
Authors: Kvon, ZD Olshanetsky, EB Casse, M Plotnikov, AY Maude, DK Portal, JC Toropov, AI
Citation: Zd. Kvon et al., IQHE and FQHE in a wire with incompressible and compressible strips, PHYSICA B, 298(1-4), 2001, pp. 155-158
Electron phase coherence length in a lattice of antidots
Authors: Pouydebasque, A Pogosov, AG Budantsev, MV Maude, DK Plotnikov, AE Toropov, AI Portal, JC
Citation: A. Pouydebasque et al., Electron phase coherence length in a lattice of antidots, PHYSICA B, 298(1-4), 2001, pp. 287-290
Shift of geometrical resonances in a periodical lattice of antidots in tilted magnetic field
Authors: Pogosov, AG Budantsev, MV Pouydebasque, A Entin, MV Maude, DK Portal, JC Plotnikov, AE Toropov, AI Bakarov, AK
Citation: Ag. Pogosov et al., Shift of geometrical resonances in a periodical lattice of antidots in tilted magnetic field, PHYSICA B, 298(1-4), 2001, pp. 291-294
Commensurability oscillations in wide parabolic well in the presence of anin-plane magnetic field
Authors: Choque, NMS Gusev, GM Leite, JR Bykov, AA Litvin, LV Moshegov, NT Toropov, AI
Citation: Nms. Choque et al., Commensurability oscillations in wide parabolic well in the presence of anin-plane magnetic field, PHYSICA B, 298(1-4), 2001, pp. 302-305
Quantum Hall effect in a wide parabolic well
Authors: Gusev, GM Leite, JR Olshanetskii, EB Moshegov, NT Toropov, AI Maude, DK Casse, M Portal, JC
Citation: Gm. Gusev et al., Quantum Hall effect in a wide parabolic well, PHYSICA B, 298(1-4), 2001, pp. 306-309
Breakdown of the quantum Hall effect
Authors: Maude, DK Rigal, LB Desrat, W Potemski, M Portal, JC Eaves, L Wasilewski, ZR Toropov, AI Hill, G
Citation: Dk. Maude et al., Breakdown of the quantum Hall effect, ACT PHY P A, 100(2), 2001, pp. 213-226
Self-assembled islands in the (Ga,Al)As/InAs heteroepitaxial system studied by Raman spectroscopy
Authors: Tenne, DA Haisler, VA Bakarov, AK Toropov, AI Gutakovsky, AK Shebanin, AP Zahn, DRT
Citation: Da. Tenne et al., Self-assembled islands in the (Ga,Al)As/InAs heteroepitaxial system studied by Raman spectroscopy, PHYS ST S-B, 224(1), 2001, pp. 25-29
Coexistence of a two- and three-dimensional Landau states in a wide parabolic quantum well - art. no. 115314
Authors: Sergio, CS Gusev, GM Leite, JR Olshanetskii, EB Bykov, AA Moshegov, NT Bakarov, AK Toropov, AI Maude, DK Estibals, O Portal, JC
Citation: Cs. Sergio et al., Coexistence of a two- and three-dimensional Landau states in a wide parabolic quantum well - art. no. 115314, PHYS REV B, 6411(11), 2001, pp. 5314
Vertical longitudinal magnetoresistance of semiconductor superlattices - art. no. 165307
Authors: Pusep, YA Gusev, GM Chiquito, AJ Sokolov, SS Bakarov, AK Toropov, AI Leite, JR
Citation: Ya. Pusep et al., Vertical longitudinal magnetoresistance of semiconductor superlattices - art. no. 165307, PHYS REV B, 6316(16), 2001, pp. 5307
Collective plasma response of interacting electrons localized in disordered GaAs/AlxGa1-xAs superlattices - art. no. 115311
Authors: Pusep, YA Fortunato, W Gonzalez-Borrero, PP Toropov, AI Galzerani, JC
Citation: Ya. Pusep et al., Collective plasma response of interacting electrons localized in disordered GaAs/AlxGa1-xAs superlattices - art. no. 115311, PHYS REV B, 6311(11), 2001, pp. 5311
Anisotropy of magnetic transport and self-organization of corrugated heterointerfaces in selectively doped structures on GaAs(100) substrates
Authors: Bykov, AA Bakarov, AK Goran, AV Latyshev, AV Toropov, AI
Citation: Aa. Bykov et al., Anisotropy of magnetic transport and self-organization of corrugated heterointerfaces in selectively doped structures on GaAs(100) substrates, JETP LETTER, 74(3), 2001, pp. 164-167
Oscillation of the mirror and fractional RHEED reflections during homoepitaxy on the (2x4)-reconstructed GaAs(001) surface
Authors: Galitsyn, YG Moshchenko, SP Toropov, AI Bakarov, AK
Citation: Yg. Galitsyn et al., Oscillation of the mirror and fractional RHEED reflections during homoepitaxy on the (2x4)-reconstructed GaAs(001) surface, TECH PHYS L, 26(4), 2000, pp. 307-310
Thermodynamic and kinetic aspects of reconstruction transitions at the GaAs(001) surface
Authors: Galitsyn, YG Mansurov, VG Moshchenko, SP Toropov, AI
Citation: Yg. Galitsyn et al., Thermodynamic and kinetic aspects of reconstruction transitions at the GaAs(001) surface, SEMICONDUCT, 34(8), 2000, pp. 939-944
Nonlinearity of acoustic effects and high-frequency electrical conductivity in GaAs/AlGaAs heterostructures under conditions of the integer quantum Hall effect
Authors: Drichko, IL D'yakonov, AM Smirnov, IY Toropov, AI
Citation: Il. Drichko et al., Nonlinearity of acoustic effects and high-frequency electrical conductivity in GaAs/AlGaAs heterostructures under conditions of the integer quantum Hall effect, SEMICONDUCT, 34(4), 2000, pp. 422-428
Surface acoustic waves (SAW) interaction with 2DES at spin-splitted Landaulevels
Authors: Drichko, IL Diakonov, AM Preobrazenskii, VV Smirnov, IY Toropov, AI
Citation: Il. Drichko et al., Surface acoustic waves (SAW) interaction with 2DES at spin-splitted Landaulevels, PHYSICA B, 284, 2000, pp. 1732-1733
High-frequency hopping conductivity in the quantum Hall effect regime: Acoustical studies
Authors: Drichko, IL Diakonov, AM Smirnov, IY Galperin, YM Toropov, AI
Citation: Il. Drichko et al., High-frequency hopping conductivity in the quantum Hall effect regime: Acoustical studies, PHYS REV B, 62(11), 2000, pp. 7470-7476
Raman study of self-assembled GaAs and AlAs islands embedded in InAs
Authors: Tenne, DA Haisler, VA Toropov, AI Bakarov, AK Gutakovsky, AK Zahn, DRT Shebanin, AP
Citation: Da. Tenne et al., Raman study of self-assembled GaAs and AlAs islands embedded in InAs, PHYS REV B, 61(20), 2000, pp. 13785-13790
Magnetotransport properties of a ballistic ring interferometer on the basis of a GaAs quantum well with a high concentration of 2D electron gas
Authors: Bykov, AA Bakarov, AK Litvin, LV Toropov, AI
Citation: Aa. Bykov et al., Magnetotransport properties of a ballistic ring interferometer on the basis of a GaAs quantum well with a high concentration of 2D electron gas, JETP LETTER, 72(4), 2000, pp. 209-212
Polariton luminescence in high-purity layers of AlGaAs solid solutions
Authors: Shamirzaev, TS Zhuravlev, KS Toropov, AI Bakarov, AK
Citation: Ts. Shamirzaev et al., Polariton luminescence in high-purity layers of AlGaAs solid solutions, JETP LETTER, 71(4), 2000, pp. 148-150
Study of strain relaxation in InAs/GaAs strained-layer superlattices by Raman spectroscopy and electron microscopy
Authors: Gutakovsky, AK Pintus, SM Toropov, AI Moshegov, NT Haisler, VA Rubanov, S Munroe, P
Citation: Ak. Gutakovsky et al., Study of strain relaxation in InAs/GaAs strained-layer superlattices by Raman spectroscopy and electron microscopy, AUST J PHYS, 53(5), 2000, pp. 697-705
Photoluminescence of high-quality AlGaAs layers grown by molecular-beam epitaxy
Authors: Zhuravlev, KS Toropov, AI Shamirzaev, TS Bakarov, AK
Citation: Ks. Zhuravlev et al., Photoluminescence of high-quality AlGaAs layers grown by molecular-beam epitaxy, APPL PHYS L, 76(9), 2000, pp. 1131-1133
Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy
Authors: Tenne, DA Haisler, VA Moshegov, NT Toropov, AI Shebanin, AP Zahn, DRT
Citation: Da. Tenne et al., Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy, EUR PHY J B, 8(3), 1999, pp. 371-376
Use of high-purity AlxGa1-xAs layers in epitaxial structures for high-power microwave field-effect transistors
Authors: Zhuravlev, KS Toropov, AI Shamirzaev, TS Bazarov, AK Rakov, YN Myakishev, YB
Citation: Ks. Zhuravlev et al., Use of high-purity AlxGa1-xAs layers in epitaxial structures for high-power microwave field-effect transistors, TECH PHYS L, 25(8), 1999, pp. 595-597
Lasing characteristics of lasers with a vertical cavity based on In0.2Ga0.8As quantum wells
Authors: Gaisler, VA Toropov, AI Bakarov, AK Kalagin, AK Moshegov, NT Tenne, DA Kachanova, MM Kopp, OR Nenasheva, LA Medvedev, AS
Citation: Va. Gaisler et al., Lasing characteristics of lasers with a vertical cavity based on In0.2Ga0.8As quantum wells, TECH PHYS L, 25(10), 1999, pp. 775-777
Risultati: 1-25 | 26-40