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Results:
1-24
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Results: 24
Authors:
Fernandez, S
Naranjo, FB
Calle, F
Sanchez-Garcia, MA
Calleja, E
Vennegues, P
Trampert, A
Ploog, KH
Citation: S. Fernandez et al., MBE-grown high-quality (Al, Ga)N/GaN distributed Bragg reflectors for resonant cavity LEDs, SEMIC SCI T, 16(11), 2001, pp. 913-917
Authors:
Braun, W
Kaganer, VM
Trampert, A
Schonherr, HP
Gong, Q
Notzel, R
Daweritz, L
Ploog, KH
Citation: W. Braun et al., Diffusion and incorporation: shape evolution during overgrowth on structured substrates, J CRYST GR, 227, 2001, pp. 51-55
Authors:
Waltereit, P
Brandt, O
Ramsteiner, M
Trampert, A
Grahn, HT
Menniger, J
Reiche, M
Ploog, KH
Citation: P. Waltereit et al., M-plane GaN(1(1)over-bar-00) grown on gamma-LiAlO2(100): nitride semiconductors free of internal electrostatic fields, J CRYST GR, 227, 2001, pp. 437-441
Authors:
Daweritz, L
Schippan, F
Trampert, A
Kastner, M
Behme, G
Wang, ZM
Moreno, M
Schutzendube, P
Ploog, KH
Citation: L. Daweritz et al., MBE growth, structure and magnetic properties of MnAs on GaAs on a microscopic scale, J CRYST GR, 227, 2001, pp. 834-838
Authors:
Santos, PV
Trampert, A
Dondeo, F
Comedi, D
Zhu, HJ
Ploog, KH
Zanatta, AR
Chambouleyron, I
Citation: Pv. Santos et al., Epitaxial pulsed laser crystallization of amorphous germanium on GaAs, J APPL PHYS, 90(5), 2001, pp. 2575-2581
Authors:
Fernandez, S
Naranjo, FB
Calle, F
Sanchez-Garcia, MA
Calleja, E
Vennegues, P
Trampert, A
Ploog, KH
Citation: S. Fernandez et al., High-quality distributed Bragg reflectors based on AlxGa1-xN/GaN multilayers grown by molecular-beam epitaxy, APPL PHYS L, 79(14), 2001, pp. 2136-2138
Authors:
Ma, WQ
Notzel, R
Trampert, A
Ramsteiner, M
Zhu, HJ
Schonherr, HP
Ploog, KH
Citation: Wq. Ma et al., Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100), APPL PHYS L, 78(9), 2001, pp. 1297-1299
Authors:
Trampert, A
Schippan, F
Daweritz, L
Ploog, KH
Citation: A. Trampert et al., Phase-transition-induced residual strain in ferromagnetic MnAs films epitaxially grown on GaAs(001), APPL PHYS L, 78(17), 2001, pp. 2461-2463
Authors:
Daweritz, L
Wang, ZM
Schippan, F
Trampert, A
Ploog, KH
Citation: L. Daweritz et al., In-situ control during molecular beam epitaxy: impurity incorporation and dissimilar materials epitaxial growth, MAT SCI E B, 75(2-3), 2000, pp. 157-165
Authors:
Trampert, A
Ploog, KH
Citation: A. Trampert et Kh. Ploog, Heteroepitaxy of large-misfit systems: Role of coincidence lattice, CRYST RES T, 35(6-7), 2000, pp. 793-806
Authors:
Thamm, A
Brandt, O
Ringling, J
Trampert, A
Ploog, KH
Mayrock, O
Wunsche, HJ
Henneberger, F
Citation: A. Thamm et al., Optical properties of heavily doped GaN/(Al,Ga)N multiple quantum wells grown on 6H-SiC(0001) by reactive molecular-beam epitaxy, PHYS REV B, 61(23), 2000, pp. 16025-16028
Authors:
Thamm, A
Brandt, O
Trampert, A
Ploog, KH
Citation: A. Thamm et al., Morphology of GaN surfaces and GaN/(Al,Ga)N interfaces grown on 6H-SiC(0001) by reactive molecular beam epitaxy, PHYS ST S-A, 180(1), 2000, pp. 73-79
Authors:
Waltereit, P
Brandt, O
Ramsteiner, M
Trampert, A
Grahn, HT
Menniger, J
Reiche, M
Uecker, R
Reiche, P
Ploog, KH
Citation: P. Waltereit et al., Growth of M-plane GaN(1(1)over-bar-00): A way to evade electrical polarization in nitrides, PHYS ST S-A, 180(1), 2000, pp. 133-138
Authors:
Waltereit, P
Brandt, O
Trampert, A
Grahn, HT
Menniger, J
Ramsteiner, M
Reiche, M
Ploog, KH
Citation: P. Waltereit et al., Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes, NATURE, 406(6798), 2000, pp. 865-868
Authors:
Schippan, F
Trampert, A
Daweritz, L
Ploog, KH
Citation: F. Schippan et al., Kinetics of MnAs growth on GaAs(001) and interface structure, J VAC SCI B, 17(4), 1999, pp. 1716-1721
Authors:
Brandt, O
Mullhauser, JR
Trampert, A
Ploog, KH
Citation: O. Brandt et al., Properties of cubic (In,Ga)N grown by molecular beam epitaxy, MAT SCI E B, 59(1-3), 1999, pp. 73-79
Structural properties of GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted MBE
Authors:
Trampert, A
Brandt, O
Yang, B
Jenichen, B
Ploog, KH
Citation: A. Trampert et al., Structural properties of GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted MBE, J CRYST GR, 202, 1999, pp. 407-410
Authors:
Schippan, F
Trampert, A
Daweritz, L
Ploog, KH
Dennis, B
Neumann, KU
Ziebeck, KRA
Citation: F. Schippan et al., Microstructure formation during MnAs growth on GaAs(001), J CRYST GR, 202, 1999, pp. 674-678
Authors:
Thamm, A
Brandt, O
Takemura, Y
Trampert, A
Ploog, KH
Citation: A. Thamm et al., Reactive molecular-beam epitaxy of GaN layers directly on 6H-SiC(0001), APPL PHYS L, 75(7), 1999, pp. 944-946
Authors:
Brandt, O
Muralidharan, R
Waltereit, P
Thamm, A
Trampert, A
von Kiedrowski, H
Ploog, KH
Citation: O. Brandt et al., Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy, APPL PHYS L, 75(25), 1999, pp. 4019-4021
Authors:
Waltereit, P
Brandt, O
Trampert, A
Ramsteiner, M
Reiche, M
Qi, M
Ploog, KH
Citation: P. Waltereit et al., Influence of AlN nucleation layers on growth mode and strain relief of GaNgrown on 6H-SiC(0001), APPL PHYS L, 74(24), 1999, pp. 3660-3662
Authors:
Trampert, A
Brandt, O
Ploog, KH
Citation: A. Trampert et al., Crystal structure of group III nitrides, SEM SEMIMET, 50, 1998, pp. 167-192
Authors:
Mullhauser, JR
Brandt, O
Trampert, A
Jenichen, B
Ploog, KH
Citation: Jr. Mullhauser et al., Green photoluminescence from cubic In0.4Ga0.6N grown by radio frequency plasma-assisted molecular beam epitaxy, APPL PHYS L, 73(9), 1998, pp. 1230-1232
Authors:
Yang, B
Trampert, A
Jenichen, B
Brandt, O
Ploog, KH
Citation: B. Yang et al., Structural characterization of thin GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted molecular beam epitaxy, APPL PHYS L, 73(26), 1998, pp. 3869-3871
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