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Results: 1-10 |
Results: 10
A physical model of the oxygen subsystem evolution in PLZT ceramics under neutron irradiation and annealing
Authors: Kulikov, DV Lesnyh, DA Trushin, YV Weber, HW Humer, K
Citation: Dv. Kulikov et al., A physical model of the oxygen subsystem evolution in PLZT ceramics under neutron irradiation and annealing, TECH PHYS L, 27(4), 2001, pp. 316-318
Changes in the transition temperature after irradiation and annealing in single crystalline YBa2Cu3O7-delta
Authors: Kulikov, DV Trushin, YV Sauerzopf, FM Zehetmayer, M Weber, HW
Citation: Dv. Kulikov et al., Changes in the transition temperature after irradiation and annealing in single crystalline YBa2Cu3O7-delta, PHYSICA C, 355(3-4), 2001, pp. 245-250
Theoretical and experimental investigations of defect evolution in siliconcarbide during N+ and Al+ ion implantation taking into account internal stress fields
Authors: Rybin, PV Kulikov, DV Trushin, YV Yankov, RA Voelskow, M Scharmann, F Pezoldt, J
Citation: Pv. Rybin et al., Theoretical and experimental investigations of defect evolution in siliconcarbide during N+ and Al+ ion implantation taking into account internal stress fields, NUCL INST B, 178, 2001, pp. 269-274
Special features of the effect of oversized impurities on the cascade development in alpha-iron alloys containing special carbides
Authors: Rybin, VV Trushin, YV Fedorov, FY Kharlamov, VS
Citation: Vv. Rybin et al., Special features of the effect of oversized impurities on the cascade development in alpha-iron alloys containing special carbides, TECH PHYS L, 26(10), 2000, pp. 876-878
Ion profiling of GaAs heterostructures: experiment and computer modeling
Authors: Ber, BY Zhurkin, EE Kudryavtsev, YA Kulikov, DV Trushin, YV Kharlamov, VS
Citation: By. Ber et al., Ion profiling of GaAs heterostructures: experiment and computer modeling, IAN FIZ, 64(4), 2000, pp. 791-795
The influence of the implantation sequence on the (SiC)(1-x)(AlN)(x) formation
Authors: Pezoldt, J Rybin, PV Kulikov, DV Trushin, YV Yankov, RA Voelskow, M Kreissig, U
Citation: J. Pezoldt et al., The influence of the implantation sequence on the (SiC)(1-x)(AlN)(x) formation, NUCL INST B, 166, 2000, pp. 758-763
Size distribution of copper nanoclusters in amorphous carbon
Authors: Kulikov, DV Trushin, YV Kharlamov, VS Ivanov-Omskii, VI
Citation: Dv. Kulikov et al., Size distribution of copper nanoclusters in amorphous carbon, TECH PHYS L, 25(3), 1999, pp. 198-199
Physical model for the evolution of the defect system of silicon carbide with allowance for the internal elastic stress fields during implantation ofAl+ and N+ and subsequent annealing
Authors: Kulikov, DV Trushin, YV Rybin, PV Kharlamov, VS
Citation: Dv. Kulikov et al., Physical model for the evolution of the defect system of silicon carbide with allowance for the internal elastic stress fields during implantation ofAl+ and N+ and subsequent annealing, TECH PHYS, 44(10), 1999, pp. 1168-1174
Modelling high-temperature co-implantation of N+ and Al+ ions in silicon carbide: the effect of stress on the implant and damage distributions
Authors: Rybin, PV Kulikov, DV Trushin, YV Yankov, RA Ecke, G Fukarek, W Skorupa, W Pezoldt, J
Citation: Pv. Rybin et al., Modelling high-temperature co-implantation of N+ and Al+ ions in silicon carbide: the effect of stress on the implant and damage distributions, NUCL INST B, 147(1-4), 1999, pp. 279-285
Computer simulation of transition from h-BN TO c-BN during ion beam assisted deposition
Authors: Kharlamov, VS Kulikov, DV Trushin, YV
Citation: Vs. Kharlamov et al., Computer simulation of transition from h-BN TO c-BN during ion beam assisted deposition, VACUUM, 52(4), 1999, pp. 407-410
Risultati: 1-10 |