Authors:
Sakharov, AV
Usikov, AS
Lundin, WV
Tsatsulnikov, AF
Tu, RC
Yin, SB
Chi, JY
Citation: Av. Sakharov et al., Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences, PHYS ST S-B, 228(1), 2001, pp. 95-98
Authors:
Chen, HJ
Lin, DY
Huang, YS
Tu, RC
Su, YK
Tiong, KK
Citation: Hj. Chen et al., Temperature dependence of the band-edge exciton of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs, SEMIC SCI T, 14(1), 1999, pp. 85-88
Authors:
Lo, I
Chen, SJ
Tu, LW
Mitchel, WC
Tu, RC
Su, YK
Citation: I. Lo et al., Effect of electron-electron interactions on a two-dimensional electron gasin II-VIZnS0.06Se0.94/Zn0.8Cd0.2Se quantum wells, PHYS REV B, 60(16), 1999, pp. R11281-R11284
Citation: Rc. Tu et al., Structural and optical properties of high-quality ZnTe grown on GaAs usingZnSe ZnTe strained-layer superlattices buffer layer, J CRYST GR, 202, 1999, pp. 506-509
Citation: Rc. Tu et al., Structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinementheterostructures with different buffer layers grown by molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 961-964
Citation: Rc. Tu et al., Effects of thermal annealing on photoluminescence and structural properties of (ZnSe)(2)(CdSe)(n) short-period-superlattices multiple quantum wells, J APPL PHYS, 85(4), 1999, pp. 2398-2401
Citation: Rc. Tu et al., Photoluminescence properties of Zn1-xMgxSe on misoriented GaAs substrates by molecular beam epitaxy, J APPL PHYS, 84(12), 1998, pp. 6877-6880