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Results: 1-13 |
Results: 13
URETHRO-VASO-CUTANEOUS FISTULA IN A 5-YEAR-OLD CHILD
Authors: ARAT A MIDIA M OZTURK H UNAL B AYDINGOZ U UNSAL M
Citation: A. Arat et al., URETHRO-VASO-CUTANEOUS FISTULA IN A 5-YEAR-OLD CHILD, Pediatric radiology, 27(1), 1997, pp. 11-13
INTENSE VISIBLE PHOTOLUMINESCENCE FROM MOLECULAR-BEAM EPITAXY POROUS SI1-XGEX GROWN ON SI
Authors: UNAL B BAYLISS SC PHILLIPS P PARKER EHC
Citation: B. Unal et al., INTENSE VISIBLE PHOTOLUMINESCENCE FROM MOLECULAR-BEAM EPITAXY POROUS SI1-XGEX GROWN ON SI, Thin solid films, 305(1-2), 1997, pp. 274-279
PHOTOVOLTAIC EFFECTS FROM POROUS SI
Authors: UNAL B BAYLISS SC
Citation: B. Unal et Sc. Bayliss, PHOTOVOLTAIC EFFECTS FROM POROUS SI, Journal of physics. D, Applied physics, 30(19), 1997, pp. 2763-2769
MEDULLARY NEPHROCALCINOSIS ASSOCIATED WITH VESICOURETERAL REFLUX
Authors: OGUZKURT L KARABULUT N HALILOGLU M UNAL B
Citation: L. Oguzkurt et al., MEDULLARY NEPHROCALCINOSIS ASSOCIATED WITH VESICOURETERAL REFLUX, British journal of radiology, 70(836), 1997, pp. 850-851
DISLOCATION SCATTERING OF ELECTRONS IN PLASTICALLY DEFORMED GERMANIUM
Authors: ALKAN B SERIN T UNAL B
Citation: B. Alkan et al., DISLOCATION SCATTERING OF ELECTRONS IN PLASTICALLY DEFORMED GERMANIUM, Semiconductor science and technology, 11(7), 1996, pp. 1046-1050
ELECTROLUMINESCENCE AND PHOTOVOLTAIC EFFECTS OF ANODICALLY FABRICATEDMETAL POROUS SI/SI SANDWICH STRUCTURES BASED ON N-TYPE ULTRAVIOLET-POROUS SI/
Authors: UNAL B BAYLISS SC
Citation: B. Unal et Sc. Bayliss, ELECTROLUMINESCENCE AND PHOTOVOLTAIC EFFECTS OF ANODICALLY FABRICATEDMETAL POROUS SI/SI SANDWICH STRUCTURES BASED ON N-TYPE ULTRAVIOLET-POROUS SI/, Journal of applied physics, 80(6), 1996, pp. 3532-3539
THE EFFECT OF DISORDER ON THE ELECTRONIC STATES OF 2-DIMENSIONAL SYSTEMS
Authors: UNAL B ALKAN B
Citation: B. Unal et B. Alkan, THE EFFECT OF DISORDER ON THE ELECTRONIC STATES OF 2-DIMENSIONAL SYSTEMS, Journal of physics. Condensed matter, 7(18), 1995, pp. 3591-3595
ANDERSON TRANSITION IN DILUTE SYSTEMS WITH PURE EXPONENTIAL INTERACTIONS
Authors: ALKAN B UNAL B
Citation: B. Alkan et B. Unal, ANDERSON TRANSITION IN DILUTE SYSTEMS WITH PURE EXPONENTIAL INTERACTIONS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(2), 1995, pp. 209-212
ELECTRON-MOBILITY IN GAAS DUE TO PIEZOELECTRIC SCATTERING
Authors: ALKAN B UNAL B OZDEMIR AR
Citation: B. Alkan et al., ELECTRON-MOBILITY IN GAAS DUE TO PIEZOELECTRIC SCATTERING, Semiconductor science and technology, 10(11), 1995, pp. 1458-1462
CALCULATION OF THE MOBILITY OF PURE NONPOLAR SEMICONDUCTORS BY A NEW METHOD
Authors: ALKAN B UNAL B OZDEMIR AR
Citation: B. Alkan et al., CALCULATION OF THE MOBILITY OF PURE NONPOLAR SEMICONDUCTORS BY A NEW METHOD, Journal of physics. Condensed matter, 6(25), 1994, pp. 4727-4736
CALCULATION OF MOBILITY IN SEMICONDUCTORS DUE TO IONIZED IMPURITIES
Authors: UNAL B ALKAN B OZDEMIR AR
Citation: B. Unal et al., CALCULATION OF MOBILITY IN SEMICONDUCTORS DUE TO IONIZED IMPURITIES, Physics letters. A, 191(1-2), 1994, pp. 25-30
THE USE OF THE CORRELATION-FUNCTION TECHNIQUE FOR THE ANDERSON TRANSITION
Authors: AKTAS H UNAL B ALKAN B
Citation: H. Aktas et al., THE USE OF THE CORRELATION-FUNCTION TECHNIQUE FOR THE ANDERSON TRANSITION, Journal of physics. Condensed matter, 5(45), 1993, pp. 8563-8568
CALCULATION OF RESISTIVITIES OF LIQUID-METALS AND ALLOYS BY A NEW METHOD
Authors: UNAL B ALKAN B
Citation: B. Unal et B. Alkan, CALCULATION OF RESISTIVITIES OF LIQUID-METALS AND ALLOYS BY A NEW METHOD, Journal of the Physical Society of Japan, 62(7), 1993, pp. 2425-2430
Risultati: 1-13 |