Authors:
FALEY MI
POPPE U
URBAN K
KRAUSE HJ
SOLTNER H
HOHMANN R
LOMPARSKI D
KUTZNER R
WORDENWEBER R
BOUSACK H
BRAGINSKI AI
SLOBODCHIKOV VY
GAPELYUK AV
KHANIN VV
MASLENNIKOV YV
Citation: Mi. Faley et al., DC-SQUID MAGNETOMETERS AND GRADIOMETERS ON THE BASIS OF QUASIPLANAR RAMP-TYPE JOSEPHSON-JUNCTIONS, IEEE transactions on applied superconductivity, 7(2), 1997, pp. 3702-3705
Authors:
ZUCCARO C
GHOSH I
URBAN K
KLEIN N
PENN S
ALFORD NM
Citation: C. Zuccaro et al., MATERIALS FOR HTS-SHIELDED DIELECTRIC RESONATORS, IEEE transactions on applied superconductivity, 7(2), 1997, pp. 3715-3718
Authors:
WITTORF D
JAGER W
URBAN K
GUTHEIT T
GUTTLER H
SCHULZ G
ZACHAI R
Citation: D. Wittorf et al., MICROSTRUCTURE AND GROWTH OF MWCVD DIAMOND ON SI1-XCX BUFFER LAYERS, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 649-653
Authors:
FEUERBACHER M
METZMACHER C
WOLLGARTEN M
URBAN K
BAUFELD B
BARTSCH M
MESSERSCHMIDT U
Citation: M. Feuerbacher et al., THE PLASTICITY OF ICOSAHEDRAL QUASI-CRYSTALS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 233(1-2), 1997, pp. 103-110
Authors:
FEUERBACHER M
METZMACHER C
WOLLGARTEN M
URBAN K
BAUFELD B
BARTSCH M
MESSERSCHMIDT U
Citation: M. Feuerbacher et al., DISLOCATIONS AND PLASTIC-DEFORMATION OF QUASI-CRYSTALS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 226, 1997, pp. 943-949
Authors:
HOLLANDMORITZ D
SCHROERS J
GRUSHKO B
HERLACH DM
URBAN K
Citation: D. Hollandmoritz et al., DEPENDENCE OF PHASE SELECTION AND MICROSTRUCTURE OF QUASI-CRYSTAL-FORMING AL-CU-FE ALLOYS ON THE PROCESSING AND SOLIDIFICATION CONDITIONS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 226, 1997, pp. 976-980
Authors:
SCHROERS J
HOLLANDMORITZ D
HERLACH DM
GRUSHKO B
URBAN K
Citation: J. Schroers et al., UNDERCOOLING AND SOLIDIFICATION BEHAVIOR OF A METASTABLE DECAGONAL QUASI-CRYSTALLINE PHASE AND CRYSTALLINE PHASES IN AL-CO, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 226, 1997, pp. 990-994
Citation: R. Hojczyk et al., NEW INSULATING MATERIALS FOR HIGH-T-C SUPERCONDUCTOR DEVICE APPLICATIONS, Physica. C, Superconductivity, 282, 1997, pp. 731-732
Authors:
TILLMANN K
LENTZEN M
THUST A
ROSENFELD R
JAGER W
URBAN K
Citation: K. Tillmann et al., DETERMINATION OF ELASTIC DECOMPOSITIONS C AUSED BY LATTICE DEFECT ADJUSTMENT IN EPITAXIAL FILM SYSTEMS ACCORDING TO HRTEM IMAGING, European journal of cell biology, 74, 1997, pp. 20-20
Authors:
TILLMANN K
RAHMATI B
TRINKAUS H
JAGER W
URBAN K
Citation: K. Tillmann et al., VERTICAL ORDER AND COMPOSITION OF GERMANI UM-RICH ISLAND STRUCTURES WITHIN SI-GE MULTILAYER SYSTEMS GROWN VIA LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION ON SI(001), European journal of cell biology, 74, 1997, pp. 52-52
Citation: B. Siemens et al., ELECTRONIC-STRUCTURE OF WURTZITE II-VI COMPOUND SEMICONDUCTOR CLEAVAGE SURFACES STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Physical review. B, Condensed matter, 56(19), 1997, pp. 12321-12326
Authors:
GEBAUER J
KRAUSEREHBERG R
DOMKE C
EBERT P
URBAN K
Citation: J. Gebauer et al., IDENTIFICATION AND QUANTIFICATION OF DEFECTS IN HIGHLY SI-DOPED GAAS BY POSITRON-ANNIHILATION AND SCANNING-TUNNELING-MICROSCOPY (VOL 78, PG3334, 1997), Physical review letters, 79(5), 1997, pp. 958-958
Authors:
GEBAUER J
KRAUSEREHBERG R
DOMKE C
EBERT P
URBAN K
Citation: J. Gebauer et al., IDENTIFICATION AND QUANTIFICATION OF DEFECTS IN HIGHLY SI-DOPED GAAS BY POSITRON-ANNIHILATION AND SCANNING-TUNNELING-MICROSCOPY, Physical review letters, 78(17), 1997, pp. 3334-3337
Citation: S. Suzuki et al., SELECTIVE ION SPUTTERING AND INITIAL OXIDATION IN AL-PD-MN SINGLE QUASI-CRYSTALS, Scripta materialia, 35(7), 1996, pp. 891-895
Authors:
TILLMANN K
THUST A
LENTZEN M
SWIATEK P
FORSTER A
URBAN K
LAUFS W
GERTHSEN D
REMMELE T
ROSENAUER A
Citation: K. Tillmann et al., DETERMINATION OF SEGREGATION, ELASTIC STRAIN AND THIN-FOIL RELAXATIONIN INXGA1-XAS ISLANDS ON GAAS(001) BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY, Philosophical magazine letters, 74(5), 1996, pp. 309-315
Authors:
EBERT P
HEINRICH M
URBAN K
CHAO KJ
SMITH AR
SHIH CK
Citation: P. Ebert et al., TEMPERATURE-DEPENDENT COMPENSATION OF ZN-DOPANT ATOMS BY VACANCIES INIII-V SEMICONDUCTOR SURFACES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1807-1811