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Results: 1-19 |
Results: 19
IMPACT OF SELF-HEATING AND THERMAL COUPLING ON ANALOG CIRCUITS IN SOICMOS
Authors: TENBROEK BM LEE MSL REDMANWHITE W BUNYAN RJT UREN MJ
Citation: Bm. Tenbroek et al., IMPACT OF SELF-HEATING AND THERMAL COUPLING ON ANALOG CIRCUITS IN SOICMOS, IEEE journal of solid-state circuits, 33(7), 1998, pp. 1037-1046
INTERFACE STATE CAPTURE CROSS-SECTION MEASUREMENTS ON VACUUM ANNEALEDAND RADIATION DAMAGED SI-SIO2 SURFACES
Authors: UREN MJ NAYAR V BRUNSON KM ANTHONY CJ STATHIS JH CARTIER E
Citation: Mj. Uren et al., INTERFACE STATE CAPTURE CROSS-SECTION MEASUREMENTS ON VACUUM ANNEALEDAND RADIATION DAMAGED SI-SIO2 SURFACES, Journal of the Electrochemical Society, 145(2), 1998, pp. 683-689
ANALOG DESIGN ISSUES FOR LOW-POWER SOI CMOS
Authors: REDMANWHITE W TENBROEK BM LEE MSL EDWARDS CF UREN MJ BUNYAN RJT
Citation: W. Redmanwhite et al., ANALOG DESIGN ISSUES FOR LOW-POWER SOI CMOS, Microelectronic engineering, 39(1-4), 1997, pp. 167-177
POTENTIAL FLUCTUATIONS DUE TO P-B CENTERS AT THE SI SIO2 INTERFACE/
Authors: UREN MJ BRUNSON KM STATHIS JH CARTIER E
Citation: Mj. Uren et al., POTENTIAL FLUCTUATIONS DUE TO P-B CENTERS AT THE SI SIO2 INTERFACE/, Microelectronic engineering, 36(1-4), 1997, pp. 219-222
THE EFFECT OF BODY CONTACT SERIES RESISTANCE ON SOI CMOS AMPLIFIER STAGES
Authors: EDWARDS CF REDMANWHITE W TENBROEK BM LEE MSL UREN MJ
Citation: Cf. Edwards et al., THE EFFECT OF BODY CONTACT SERIES RESISTANCE ON SOI CMOS AMPLIFIER STAGES, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2290-2294
ELECTRICAL MEASUREMENT OF SILICON FILM AND OXIDE THICKNESSES IN PARTIALLY DEPLETED SOI TECHNOLOGIES
Authors: TENBROEK BM REDMANWHITE W LEE MSL UREN MJ
Citation: Bm. Tenbroek et al., ELECTRICAL MEASUREMENT OF SILICON FILM AND OXIDE THICKNESSES IN PARTIALLY DEPLETED SOI TECHNOLOGIES, Solid-state electronics, 39(7), 1996, pp. 1011-1014
CONDUCTANCE MEASUREMENTS ON P-B CENTERS AT THE (111)SI-SIO2 INTERFACE
Authors: UREN MJ STATHIS JH CARTIER E
Citation: Mj. Uren et al., CONDUCTANCE MEASUREMENTS ON P-B CENTERS AT THE (111)SI-SIO2 INTERFACE, Journal of applied physics, 80(7), 1996, pp. 3915-3922
CHARACTERIZATION OF LAYOUT DEPENDENT THERMAL COUPLING IN SOI CMOS CURRENT MIRRORS
Authors: TENBROEK BM REDMANWHITE W LEE MSL BUNYAN RJT UREN MJ BRUNSON KM
Citation: Bm. Tenbroek et al., CHARACTERIZATION OF LAYOUT DEPENDENT THERMAL COUPLING IN SOI CMOS CURRENT MIRRORS, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2227-2232
SELF-HEATING EFFECTS IN SOI MOSFETS AND THEIR MEASUREMENT BY SMALL-SIGNAL CONDUCTANCE TECHNIQUES
Authors: TENBROEK BM LEE MSL REDMANWHITE W BUNYAN RJT UREN MJ
Citation: Bm. Tenbroek et al., SELF-HEATING EFFECTS IN SOI MOSFETS AND THEIR MEASUREMENT BY SMALL-SIGNAL CONDUCTANCE TECHNIQUES, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2240-2248
RADIATION HARDNESS OF N2O GROWN OXYNITRIDES ASSESSED USING THE CONDUCTANCE TECHNIQUE
Authors: ANTHONY CJ UREN MJ NAYAR V
Citation: Cj. Anthony et al., RADIATION HARDNESS OF N2O GROWN OXYNITRIDES ASSESSED USING THE CONDUCTANCE TECHNIQUE, Applied physics letters, 69(14), 1996, pp. 2104-2106
FAST AND SLOW INTERFACE STATE DISTRIBUTIONS ON (100)SI-SIO2 AND (111)SI-SIO2 SURFACES FOLLOWING NEGATIVE BIAS STRESS
Authors: UREN MJ OSTLER JM HODGE AM
Citation: Mj. Uren et al., FAST AND SLOW INTERFACE STATE DISTRIBUTIONS ON (100)SI-SIO2 AND (111)SI-SIO2 SURFACES FOLLOWING NEGATIVE BIAS STRESS, Microelectronic engineering, 28(1-4), 1995, pp. 11-14
THE ELECTRICAL-PROPERTIES OF POROUS SILICON PRODUCED FROM N(+) SILICON SUBSTRATES
Authors: SIMONS AJ COX TI UREN MJ CALCOTT PDJ
Citation: Aj. Simons et al., THE ELECTRICAL-PROPERTIES OF POROUS SILICON PRODUCED FROM N(+) SILICON SUBSTRATES, Thin solid films, 255(1-2), 1995, pp. 12-15
AN IMPROVED TECHNIQUE FOR THE EVALUATION OF SURFACE FERMI ENERGY IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: UREN MJ BRUNSON KM
Citation: Mj. Uren et Km. Brunson, AN IMPROVED TECHNIQUE FOR THE EVALUATION OF SURFACE FERMI ENERGY IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Semiconductor science and technology, 9(8), 1994, pp. 1504-1510
PLASMA-GROWN OXIDES ON SILICON WITH EXTREMELY LOW INTERFACE STATE DENSITIES
Authors: KENNEDY GP TAYLOR S ECCLESTON W UREN MJ
Citation: Gp. Kennedy et al., PLASMA-GROWN OXIDES ON SILICON WITH EXTREMELY LOW INTERFACE STATE DENSITIES, Microelectronics, 25(7), 1994, pp. 485-489
OPTIMIZATION OF FURNACE OXIDATION OF SI WITH RESPECT TO NEGATIVE BIASSTRESS INSTABILITY
Authors: NAYAR V JACKSON R FILLEUL ML BRUNSON KM UREN MJ HODGE AM
Citation: V. Nayar et al., OPTIMIZATION OF FURNACE OXIDATION OF SI WITH RESPECT TO NEGATIVE BIASSTRESS INSTABILITY, Microelectronic engineering, 22(1-4), 1993, pp. 47-50
RANDOM TELEGRAPH SIGNALS FROM LIQUID-HELIUM TO ROOM-TEMPERATURE
Authors: COBDEN DH UREN MJ
Citation: Dh. Cobden et Mj. Uren, RANDOM TELEGRAPH SIGNALS FROM LIQUID-HELIUM TO ROOM-TEMPERATURE, Microelectronic engineering, 22(1-4), 1993, pp. 163-170
DISSIPATIVE TUNNELING IN 2-STATE SYSTEMS AT THE SI SIO2 INTERFACE/
Authors: COBDEN DH UREN MJ PEPPER M
Citation: Dh. Cobden et al., DISSIPATIVE TUNNELING IN 2-STATE SYSTEMS AT THE SI SIO2 INTERFACE/, Physical review letters, 71(25), 1993, pp. 4230-4233
DIRECT EXTRACTION OF MOSFET DYNAMIC THERMAL-CHARACTERISTICS FROM STANDARD TRANSISTOR STRUCTURES USING SMALL-SIGNAL MEASUREMENTS
Authors: REDMANWHITE W LEE MSL TENBROEK BM UREN MJ BUNYAN RJT
Citation: W. Redmanwhite et al., DIRECT EXTRACTION OF MOSFET DYNAMIC THERMAL-CHARACTERISTICS FROM STANDARD TRANSISTOR STRUCTURES USING SMALL-SIGNAL MEASUREMENTS, Electronics Letters, 29(13), 1993, pp. 1180-1181
RANDOM TELEGRAPH SIGNALS ARISING FROM FAST INTERFACE STATES IN METAL-SIO2-SI TRANSISTORS - COMMENT
Authors: UREN MJ
Citation: Mj. Uren, RANDOM TELEGRAPH SIGNALS ARISING FROM FAST INTERFACE STATES IN METAL-SIO2-SI TRANSISTORS - COMMENT, Applied physics letters, 63(10), 1993, pp. 1443-1443
Risultati: 1-19 |