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Results:
1-21
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Results: 21
Authors:
Nonogaki, Y
Gao, Y
Mekaru, H
Miyamae, T
Urisu, T
Citation: Y. Nonogaki et al., Nanostructure formation on Si (111) surface assisted by synchrotron radiation illumination - Characterization by scanning tunneling microscopy, J ELEC SPEC, 119(2-3), 2001, pp. 241-246
Authors:
Takezoe, N
Yanagida, H
Tanaka, T
Kurosawa, K
Nonogaki, Y
Noda, H
Mekaru, H
Urisu, T
Citation: N. Takezoe et al., Design and construction of UVSOR-BL4A2 beam line for nano-structure processing, NUCL INST A, 467, 2001, pp. 1279-1281
Authors:
Noda, H
Urisu, T
Kobayashi, Y
Ogino, T
Citation: H. Noda et al., Initial stage of hydrogen etching of Si surfaces investigated by infrared reflection absorption spectroscopy, JPN J A P 1, 39(12B), 2000, pp. 6985-6989
Authors:
Nonogaki, Y
Hatate, H
Oga, R
Yamamoto, S
Fujiwara, Y
Takeda, Y
Noda, H
Urisu, T
Citation: Y. Nonogaki et al., SR-stimulated etching and OMVPE growth for semiconductor nanostructure fabrication, MAT SCI E B, 74(1-3), 2000, pp. 7-11
Authors:
Gao, Y
Mekaru, H
Miyamae, T
Urisu, T
Citation: Y. Gao et al., Scanning tunneling microscopy study of surface morphology of Si(111) aftersynchrotron radiation stimulated desorption of SiO2, J VAC SCI A, 18(4), 2000, pp. 1153-1157
Authors:
Mase, K
Tanaka, S
Nagaoka, S
Urisu, T
Citation: K. Mase et al., Ion desorption induced by core-electron transitions studied with electron-ion coincidence spectroscopy, SURF SCI, 451(1-3), 2000, pp. 143-152
Authors:
Noda, H
Urisu, T
Citation: H. Noda et T. Urisu, Assignments of bending and stretching vibrational spectra and mechanisms of thermal decomposition of SiH2 on Si(100) surfaces, CHEM P LETT, 326(1-2), 2000, pp. 163-168
Authors:
Gao, Y
Mekaru, H
Miyamae, T
Urisu, T
Citation: Y. Gao et al., Scanning tunneling microscopy study of Si(111) surface morphology after removal of SiO2 by synchrotron radiation illumination, APPL PHYS L, 76(11), 2000, pp. 1392-1394
Authors:
Miyamae, T
Urisu, T
Uchida, H
Munro, IH
Citation: T. Miyamae et al., Scanning tunneling microscopy for the study of the synchrotron-radiation stimulated processes; Synchrotron-radiation stimulated desorption of SiO2 films on Si(111) surface, JPN J A P 1, 38, 1999, pp. 249-252
Authors:
Nagasono, M
Mase, K
Tanaka, S
Urisu, T
Citation: M. Nagasono et al., Ultrafast H+ desorption from an isolated NH3 monolayer adsorbed on a Xe film induced by a resonant core electron transition studied by Auger electron-photoion coincidence spectroscopy, JPN J A P 1, 38, 1999, pp. 325-327
Authors:
Urisu, T
Citation: T. Urisu, Infrared reflection absorption spectroscopy of selective etching and decomposition stimulated by synchrotron radiation, MRS BULL, 24(1), 1999, pp. 46-48
Authors:
Miyamae, T
Uchida, H
Munro, IH
Urisu, T
Citation: T. Miyamae et al., Synchrotron-radiation stimulated desorption of SiO2 thin films on Si(111) surfaces observed by scanning tunneling microscopy, J VAC SCI A, 17(4), 1999, pp. 1733-1736
Authors:
Nagaoka, S
Mase, K
Nagasono, M
Tanaka, S
Urisu, T
Ohshita, J
Nagashima, U
Citation: S. Nagaoka et al., Site-specific phenomena in Si : 2p core-level photoionization of X3Si(CH2)(n)Si(CH3)(3) (X = F or Cl, n=0-2) condensed on a Si(111) surface, CHEM PHYS, 249(1), 1999, pp. 15-27
Authors:
Imaizum, Y
Mekaru, H
Urisu, T
Citation: Y. Imaizum et al., Quantum yield and carbon contamination in thin-film deposition reaction bycore-electron excitations, APPL ORGAN, 13(3), 1999, pp. 195-200
Authors:
Miyamae, T
Uchida, H
Munro, IH
Urisu, T
Citation: T. Miyamae et al., Direct observation of synchrotron-radiation-stimulated desorption of thin SiO2 films on Si(111) by scanning tunneling microscopy, SURF SCI, 437(1-2), 1999, pp. L755-L760
Authors:
Kobayashi, Y
Sumitomo, K
Shiraishi, K
Urisu, T
Ogino, T
Citation: Y. Kobayashi et al., Control of surface composition on Ge/Si(001) by atomic hydrogen irradiation, SURF SCI, 436(1-3), 1999, pp. 9-14
Authors:
Mekaru, H
Tsusaka, Y
Miyamae, T
Kinoshita, T
Urisu, T
Masui, S
Toyota, E
Takenaka, H
Citation: H. Mekaru et al., Construction of the multilayered-mirror monochromator beam line for the study of synchrotron radiation stimulated process, REV SCI INS, 70(6), 1999, pp. 2601-2605
Authors:
Homma, Y
Finnie, P
Ogino, T
Noda, H
Urisu, T
Citation: Y. Homma et al., Aligned island formation using step-band networks on Si(111), J APPL PHYS, 86(6), 1999, pp. 3083-3088
Authors:
Hirano, S
Noda, H
Yoshigoe, A
Gheyas, SI
Urisu, T
Citation: S. Hirano et al., Annealing and synchrotron radiation irradiation effects on hydrogen terminated Si(100) surfaces investigated by infrared reflection absorption spectroscopy, JPN J A P 1, 37(12B), 1998, pp. 6991-6995
Authors:
Hirano, S
Yoshigoe, A
Nagasono, M
Mase, K
Ohara, J
Nonogaki, Y
Takeda, Y
Urisu, T
Citation: S. Hirano et al., Ultrahigh-vacuum reaction apparatus to study synchrotron-radiation-stimulated processes, J SYNCHROTR, 5, 1998, pp. 1363-1368
Authors:
Nagasono, M
Mase, K
Tanaka, S
Urisu, T
Citation: M. Nagasono et al., State-selected ion desorption from condensed H2O at 80 K studied by Auger electron-photoion coincidence spectroscopy, CHEM P LETT, 298(1-3), 1998, pp. 141-145
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