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Results: 1-13 |
Results: 13
Determination of electrically active impurities in light emitting Si : Er/Si structures grown with sublimation molecular beam epitaxy
Authors: Shmagin, VB Andreev, BA Antonov, AV Krasil'nik, ZF Stepikhova, MV Kuznetsov, VP Uskova, EA Kuznetsov, OA Rubtsova, RA
Citation: Vb. Shmagin et al., Determination of electrically active impurities in light emitting Si : Er/Si structures grown with sublimation molecular beam epitaxy, IAN FIZ, 65(2), 2001, pp. 276-279
Role of doped layers in the dephasing of two-dimensional electrons in quantum-well structures - art. no. 193309
Authors: Minkov, GM Germanenko, AV Rut, OE Sherstobitov, AA Zvonkov, BN Uskova, EA Birukov, AA
Citation: Gm. Minkov et al., Role of doped layers in the dephasing of two-dimensional electrons in quantum-well structures - art. no. 193309, PHYS REV B, 6419(19), 2001, pp. 3309
Doping of silicon layers from a sublimating erbium source in molecular beam epitaxy
Authors: Svetlov, SP Chalkov, VY Shengurov, VG Uskova, EA Maksimov, GA Andreev, BA Krasil'nik, ZF Stepikhova, MV Ellmer, H
Citation: Sp. Svetlov et al., Doping of silicon layers from a sublimating erbium source in molecular beam epitaxy, TECH PHYS L, 26(1), 2000, pp. 41-43
Diagnostics of the hot-hole distribution function in quantum wells in a strong electric field
Authors: Aleshkin, VY Gaponova, DM Gavrilenko, VI Krasil'nik, ZF Revin, DG Zvonkov, BN Uskova, EA
Citation: Vy. Aleshkin et al., Diagnostics of the hot-hole distribution function in quantum wells in a strong electric field, SEMICONDUCT, 34(9), 2000, pp. 1073-1078
Optically active Er-related centers in Si : Er epitaxial layers grown by the sublimation MBE method
Authors: Andreev, BA Andreev, AY Gaponova, DM Krasil'nik, ZF Kuznetsov, VP Novikov, AV Stepikhova, MV Uskova, EA Shmagin, VB Lanzerstorfer, S
Citation: Ba. Andreev et al., Optically active Er-related centers in Si : Er epitaxial layers grown by the sublimation MBE method, IAN FIZ, 64(2), 2000, pp. 269-272
Distribution function of hot holes and real space transfer in p-type InGaAs/GaAs heterostructures with quantum wells
Authors: Aleshkin, VY Andronov, AA Antonov, AV Gaponova, DM Gavrilenko, VI Revin, DG Zvonkov, BN Uskova, EA
Citation: Vy. Aleshkin et al., Distribution function of hot holes and real space transfer in p-type InGaAs/GaAs heterostructures with quantum wells, IAN FIZ, 64(2), 2000, pp. 302-307
1,54 mu m photoluminescence from films growth by sublimation MBE Si and doped erbium and oxygen
Authors: Shengurov, VG Svetlov, SP Chalkov, VY Uskova, EA Krasil'nik, ZF Andreev, BA Stepichova, MV
Citation: Vg. Shengurov et al., 1,54 mu m photoluminescence from films growth by sublimation MBE Si and doped erbium and oxygen, IAN FIZ, 64(2), 2000, pp. 353-357
Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure
Authors: Aleshkin, VY Andronov, AA Antonov, AV Gavrilenko, VI Gaponova, DM Krasil'nik, ZF Revin, DG Zvonkov, N Uskova, EA
Citation: Vy. Aleshkin et al., Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure, SEMIC SCI T, 15(11), 2000, pp. 1049-1053
Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy
Authors: Andreev, AY Andreev, BA Drozdov, MN Krasil'nik, ZF Stepikhova, MV Shmagin, VB Kuznetsov, VP Rubtsova, RA Uskova, EA Karpov, YA Ellmer, H Palmetshofer, L Piplits, K Hutter, H
Citation: Ay. Andreev et al., Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy, SEMICONDUCT, 33(2), 1999, pp. 131-134
Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm
Authors: Zvonkov, NB Akhlestina, SA Ershov, AV Zvonkov, BN Maksimov, GA Uskova, EA
Citation: Nb. Zvonkov et al., Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm, QUANTUM EL, 29(3), 1999, pp. 217-218
Hot electron intervalley transfer in GaAs-AlAs MQWs: population inversion and possibility of intraband lasing
Authors: Aleshkin, VY Andronov, AA Antonov, AV Demidov, EV Gavrilenko, VI Revin, DG Zvonkov, BN Zvonkov, NB Uskova, EA
Citation: Vy. Aleshkin et al., Hot electron intervalley transfer in GaAs-AlAs MQWs: population inversion and possibility of intraband lasing, PHYSICA B, 272(1-4), 1999, pp. 139-142
Electrical and optical properties of silicon, doped by erbium during sublimational molecular beam epitaxy
Authors: Andreev, AY Andreev, BA Drozdov, MN Ellmer, H Kuznetsov, VP Kalugin, NG Krasilnic, ZF Karpov, YA Palmetshofer, L Piplits, K Rubtsova, RA Stepikhova, MV Uskova, EA Shmagin, VB Hutter, H
Citation: Ay. Andreev et al., Electrical and optical properties of silicon, doped by erbium during sublimational molecular beam epitaxy, IAN FIZ, 63(2), 1999, pp. 392-399
Optical Er-doping of Si during sublimational molecular beam epitaxy
Authors: Andreev, BA Andreev, AY Ellmer, H Hutter, H Krasil'nik, ZF Kuznetsov, VP Lanzerstorfer, S Palmetshofer, L Piplits, K Rubtsova, RA Sokolov, NS Shmagin, VB Stepikhova, MV Uskova, EA
Citation: Ba. Andreev et al., Optical Er-doping of Si during sublimational molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 534-537
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