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Results: 1-25/120
Inelastic scattering of hot electrons in n-CaAs/AlAs types I and II multiple quantum wells doped with silicon
Authors: Akimov, IA Sapega, VF Mirlin, DN Ustinov, VM
Citation: Ia. Akimov et al., Inelastic scattering of hot electrons in n-CaAs/AlAs types I and II multiple quantum wells doped with silicon, PHYSICA E, 10(4), 2001, pp. 505-510
1.55-1.6 mu m electroluminescence of GaAs based diode structures with quantum dots
Authors: Zhukov, AE Volovik, BV Mikhrin, SS Maleev, NA Tsatsul'nikov, AF Nikitina, EV Kayander, IN Ustinov, VM Ledentsov, NN
Citation: Ae. Zhukov et al., 1.55-1.6 mu m electroluminescence of GaAs based diode structures with quantum dots, TECH PHYS L, 27(9), 2001, pp. 734-736
Optical properties of submonolayer germanium clusters formed by molecular-beam epitaxy in a silicon matrix
Authors: Cirlin, GE Werner, P Gosele, G Volovik, BV Ustinov, VM Ledentsov, NN
Citation: Ge. Cirlin et al., Optical properties of submonolayer germanium clusters formed by molecular-beam epitaxy in a silicon matrix, TECH PHYS L, 27(1), 2001, pp. 14-16
GaAsN-on-GaAs MBE using a DC plasma source
Authors: Zhukov, AE Semenova, ES Ustinov, VM Weber, ER
Citation: Ae. Zhukov et al., GaAsN-on-GaAs MBE using a DC plasma source, TECH PHYS, 46(10), 2001, pp. 1265-1269
Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by x-ray and synchrotron diffraction and transmission electron microscopy
Authors: Faleev, NN Musikhin, YG Suvorova, AA Egorov, AY Zhukov, AE Kovsh, AR Ustinov, VM Tabuchi, M Takeda, Y
Citation: Nn. Faleev et al., Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by x-ray and synchrotron diffraction and transmission electron microscopy, SEMICONDUCT, 35(8), 2001, pp. 932-940
Comparative analysis of long-wavelength (1.3 mu m) VCSELs on GaAs substrates
Authors: Maleev, NA Egorov, AY Zhukov, AE Kovsh, AR Vasil'ev, AP Ustinov, VM Ledentsov, NN Alferov, ZI
Citation: Na. Maleev et al., Comparative analysis of long-wavelength (1.3 mu m) VCSELs on GaAs substrates, SEMICONDUCT, 35(7), 2001, pp. 847-853
1.3 mu m vertical microcavities with InAs/InGaAs quantum dots and devices based on them
Authors: Sakharov, AV Krestnikov, IL Maleev, NA Kovsh, AR Zhukov, AE Tsatsul'nikov, AF Ustinov, VM Ledentsov, NN Bimberg, D Lott, JA Alferov, ZI
Citation: Av. Sakharov et al., 1.3 mu m vertical microcavities with InAs/InGaAs quantum dots and devices based on them, SEMICONDUCT, 35(7), 2001, pp. 854-859
Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy
Authors: Odnoblyudov, VA Kovsh, AR Zhukov, AE Maleev, NA Semenova, ES Ustinov, VM
Citation: Va. Odnoblyudov et al., Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy, SEMICONDUCT, 35(5), 2001, pp. 533-538
Manifestation of the upper hubbard band in the electrical conductivity of two-dimensional p-GaAs-AlGaAs structures
Authors: Agrinskaya, NV Ivanov, YL Ustinov, VM Poloskin, DA
Citation: Nv. Agrinskaya et al., Manifestation of the upper hubbard band in the electrical conductivity of two-dimensional p-GaAs-AlGaAs structures, SEMICONDUCT, 35(5), 2001, pp. 550-553
Hot-hole lateral transport in a two-dimensional GaAs/Al0.3Ga0.7As structure
Authors: Ivanov, YL Elizarov, IV Ustinov, VM Zhukov, AE
Citation: Yl. Ivanov et al., Hot-hole lateral transport in a two-dimensional GaAs/Al0.3Ga0.7As structure, SEMICONDUCT, 35(4), 2001, pp. 433-435
Low-temperature hopping conduction over the upper hubbard band in p-GaAs/AlGaAs multilayered structures
Authors: Agrinskaya, NV Kozub, VI Ivanov, YL Ustinov, VM Chernyaev, AV Shamshur, DV
Citation: Nv. Agrinskaya et al., Low-temperature hopping conduction over the upper hubbard band in p-GaAs/AlGaAs multilayered structures, J EXP TH PH, 93(2), 2001, pp. 424-428
Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties
Authors: Cirlin, GE Polyakov, NK Petrov, VN Egorov, VA Denisov, DV Volovik, BV Ustinov, VM Alferov, ZI Ledentsov, NN Heitz, R Bimberg, D Zakharov, ND Werner, P Gosele, U
Citation: Ge. Cirlin et al., Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties, MAT SCI E B, 80(1-3), 2001, pp. 108-111
Novel infrared quantum dot lasers: Theory and reality
Authors: Bimberg, D Grundmann, M Ledentsov, NN Mao, MH Ribbat, C Sellin, R Ustinov, VM Zhukov, AE Alferov, ZI Lott, JA
Citation: D. Bimberg et al., Novel infrared quantum dot lasers: Theory and reality, PHYS ST S-B, 224(3), 2001, pp. 787-796
InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 mu m wavelength range
Authors: Maleev, NA Krestnikov, IL Kovsh, AR Sakharov, AV Zhukov, AE Ustinov, VM Mikhrin, SS Passenberg, W Pawlowski, E Moller, C Tsatsulnikov, AF Kunzel, H Ledentsov, NN Alferov, ZI Bimberg, D
Citation: Na. Maleev et al., InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 mu m wavelength range, PHYS ST S-B, 224(3), 2001, pp. 803-806
Large spectral splitting of TE and TM components of QDs in a microcavity
Authors: Maximov, MV Krestnikov, IL Makarov, AG Zhukov, AE Maleev, NA Ustinov, VM Tsatsulnikov, AF Alferov, ZI Chernyshov, AY Ledentsov, NN Bimberg, D Torres, CMS
Citation: Mv. Maximov et al., Large spectral splitting of TE and TM components of QDs in a microcavity, PHYS ST S-B, 224(3), 2001, pp. 811-814
Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots
Authors: Weber, A Goede, K Grundmann, M Heinrichsdorff, F Bimberg, D Ustinov, VM Zhukov, AE Ledentsov, NN Kopev, PS Alferov, ZI
Citation: A. Weber et al., Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots, PHYS ST S-B, 224(3), 2001, pp. 833-837
Entropy-driven effects in self-organized formation of quantum dots
Authors: Shchukin, VA Ledentsov, NN Hoffmann, A Bimberg, D Soshnikov, IP Volovik, BV Ustinov, VM Litvinov, D Gerthsen, D
Citation: Va. Shchukin et al., Entropy-driven effects in self-organized formation of quantum dots, PHYS ST S-B, 224(2), 2001, pp. 503-508
Dynamical redistribution of mean electron spin over the energy spectrum ofquantum dots
Authors: Kalevich, VK Paillard, M Kavokin, KV Marie, X Kovsh, AR Amand, T Zhukov, AE Vanelle, E Ustinov, VM Zakharchenya, BP
Citation: Vk. Kalevich et al., Dynamical redistribution of mean electron spin over the energy spectrum ofquantum dots, PHYS ST S-B, 224(2), 2001, pp. 567-571
Time-resolved capacitance spectroscopy of hole and electron levels in InAs/GaAs quantum dots
Authors: Kapteyn, CMA Lion, M Heitz, R Bimberg, D Brunkov, P Volovik, B Konnikov, SG Kovsh, AR Ustinov, VM
Citation: Cma. Kapteyn et al., Time-resolved capacitance spectroscopy of hole and electron levels in InAs/GaAs quantum dots, PHYS ST S-B, 224(1), 2001, pp. 57-60
Radiative recombination features of metastable quantum dot array
Authors: Talalaev, VG Novikov, BV Gobsch, G Goldhahn, R Stein, N Tomm, JW Maassdorf, A Cirlin, GE Petrov, VN Ustinov, VM
Citation: Vg. Talalaev et al., Radiative recombination features of metastable quantum dot array, PHYS ST S-B, 224(1), 2001, pp. 101-105
Quantum dot lasers of NIR range based on GaAs
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Volovik, BV Musikhin, YG Tsatsul'nikov, AF Maximov, MV Shernyakov, YM Alferov, ZI Ledentsov, NN Bimberg, D Lott, J
Citation: Vm. Ustinov et al., Quantum dot lasers of NIR range based on GaAs, IAN FIZ, 65(2), 2001, pp. 214-218
Quantum dot multilayer structures in InAs/GaAs and InAs/Si systems
Authors: Cirlin, GE Petrov, VN Polyakov, NK Egorov, VA Samsonenko, YB Volovik, BV Denisov, DV Ustinov, VM Alferov, ZL Ledentsov, NN Bimberg, D Zakharov, ND Werner, P
Citation: Ge. Cirlin et al., Quantum dot multilayer structures in InAs/GaAs and InAs/Si systems, IAN FIZ, 65(2), 2001, pp. 219-222
Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces
Authors: Ledentsov, NN Litvinov, D Rosenauer, A Gerthsen, D Soshnikov, IP Shchukin, VA Ustinov, VM Egorov, AY Zukov, AE Volodin, VA Efremov, MD Preobrazhenskii, VV Semyagin, BP Bimberg, D Alferov, ZI
Citation: Nn. Ledentsov et al., Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces, J ELEC MAT, 30(5), 2001, pp. 463-470
1.3 mu m GaAs-based quantum well and quantum dot lasers: Comparative analysis
Authors: Egorov, AY Zhukov, AE Ustinov, VM
Citation: Ay. Egorov et al., 1.3 mu m GaAs-based quantum well and quantum dot lasers: Comparative analysis, J ELEC MAT, 30(5), 2001, pp. 477-481
Reversibility of the island shape, volume and density in Stranski-Krastanow growth
Authors: Ledentsov, NN Shchukin, VA Bimberg, D Ustinov, VM Cherkashin, NA Musikhin, YG Volovik, BV Cirlin, GE Alferov, ZI
Citation: Nn. Ledentsov et al., Reversibility of the island shape, volume and density in Stranski-Krastanow growth, SEMIC SCI T, 16(6), 2001, pp. 502-506
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