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Results:
1-13
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Results: 13
Authors:
Uzan-Saguy, C
Reznik, A
Cytermann, C
Brener, R
Kalish, R
Bustarret, E
Bernard, M
Deneuville, A
Gheeraert, E
Chevallier, J
Citation: C. Uzan-saguy et al., Hydrogen diffusion in B-ion-implanted and B-doped homo-epitaxial diamond: passivation of defects vs. passivation of B accepters, DIAM RELAT, 10(3-7), 2001, pp. 453-458
Authors:
Casanova, N
Gheeraert, E
Deneuville, A
Uzan-Saguy, C
Kalish, R
Citation: N. Casanova et al., Phosphorus site after CIRA implantation of type IIa diamond, DIAM RELAT, 10(3-7), 2001, pp. 580-584
Authors:
Fizgeer, B
Uzan-Saguy, C
Cytermann, C
Richter, V
Avigal, I
Shaanan, M
Brener, R
Kalish, R
Citation: B. Fizgeer et al., Inhibition of light element diffusion in diamond due to ion implantation related defects, PHYS ST S-A, 186(2), 2001, pp. 281-289
Authors:
Bustarret, E
Pruvost, F
Bernard, M
Cytermann, C
Uzan-Saguy, C
Citation: E. Bustarret et al., Optical conductivity studies in heavily boron-doped diamond, PHYS ST S-A, 186(2), 2001, pp. 303-307
Authors:
Tang, H
Webb, JB
Bardwell, JA
Raymond, S
Salzman, J
Uzan-Saguy, C
Citation: H. Tang et al., Properties of carbon-doped GaN, APPL PHYS L, 78(6), 2001, pp. 757-759
Authors:
Reznik, A
Uzan-Saguy, C
Kalish, R
Citation: A. Reznik et al., Effects of point defects on the electrical properties of doped diamond, DIAM RELAT, 9(3-6), 2000, pp. 1051-1056
Authors:
Casanova, N
Gheeraert, E
Deneuville, A
Uzan-Saguy, C
Kalish, R
Citation: N. Casanova et al., ESR study of phosphorus implanted type IIa diamond, PHYS ST S-A, 181(1), 2000, pp. 5-10
Authors:
Kalish, R
Reznik, A
Uzan-Saguy, C
Cytermann, C
Citation: R. Kalish et al., Is sulfur a donor in diamond?, APPL PHYS L, 76(6), 2000, pp. 757-759
Authors:
Salzman, J
Uzan-Saguy, C
Kalish, R
Richter, V
Meyler, B
Citation: J. Salzman et al., Thermally activated electrical conductivity in thin GaN epitaxial films, APPL PHYS L, 76(11), 2000, pp. 1431-1433
Authors:
Kalish, R
Uzan-Saguy, C
Ran, B
Ferber, H
Guettler, H
Zachai, R
Citation: R. Kalish et al., Instantaneous annealing of CVD diamond during high dose-rate ion implantation, DIAM RELAT, 8(2-5), 1999, pp. 877-881
Authors:
Salzman, J
Uzan-Saguy, C
Meyler, B
Kalish, R
Citation: J. Salzman et al., The effect of grain boundaries on electrical conductivity in thin GaN layers, PHYS ST S-A, 176(1), 1999, pp. 683-687
Authors:
Uzan-Saguy, C
Salzman, J
Kalish, R
Richter, V
Tish, U
Zamir, S
Prawer, S
Citation: C. Uzan-saguy et al., Electrical isolation of GaN by ion implantation damage: Experiment and model, APPL PHYS L, 74(17), 1999, pp. 2441-2443
Authors:
Prawer, S
Jamieson, DN
Nugent, KW
Walker, R
Uzan-Saguy, C
Kalish, R
Citation: S. Prawer et al., Effective activation of dopants using MeV ion implantation, DIAM FILM T, 8(4), 1998, pp. 195-210
Risultati:
1-13
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