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Results:
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Results: 8
COMPLEMENTARY HIGH-VOLTAGE TECHNOLOGY-BASED ON N-TYPE CDSE-IN AND P-TYPE GE-CU THIN-FILM TRANSISTORS
Authors:
DECUBBER AM
DESMET H
DEVOS J
CARCHON N
VANCALSTER A
Citation: Am. Decubber et al., COMPLEMENTARY HIGH-VOLTAGE TECHNOLOGY-BASED ON N-TYPE CDSE-IN AND P-TYPE GE-CU THIN-FILM TRANSISTORS, IEEE electron device letters, 17(12), 1996, pp. 581-583
Authors:
ZHOU MJ
VANCALSTER A
Citation: Mj. Zhou et A. Vancalster, A BREAKDOWN VOLTAGE MODEL FOR IMPLANTED RESURF P-LDMOS DEVICE ON N(+)BURIED LAYER, Solid-state electronics, 37(7), 1994, pp. 1383-1385
Authors:
CAPON J
DEBAETS J
DECUBBER AM
DESMET H
VANCALSTER A
VANFLETEREN J
Citation: J. Capon et al., ANALYSIS OF TRANSIENT PHOTOCONDUCTIVITY IN CDSECUCL THIN-FILMS, Physica status solidi. a, Applied research, 142(1), 1994, pp. 127-140
Authors:
CAPON J
DEBAETS J
DERYCKE I
DESMET H
DOUTRELOIGNE J
VANCALSTER A
VANFLETEREN J
Citation: J. Capon et al., A LENSLESS CONTACT-TYPE IMAGE SENSOR-BASED ON A CDSE PHOTOCONDUCTIVE ARRAY, Sensors and actuators. A, Physical, 37-8, 1993, pp. 546-551
Authors:
ZHOU MJ
DESMET H
DEBRUYCKER A
VANCALSTER A
Citation: Mj. Zhou et al., A 2-D BOUNDARY-ELEMENT METHOD APPROACH TO THE SIMULATION OF DMOS TRANSISTORS, IEEE transactions on computer-aided design of integrated circuits and systems, 12(6), 1993, pp. 810-816
Authors:
ZHOU MJ
DEBRUYCKER A
VANCALSTER A
WITTERS J
Citation: Mj. Zhou et al., HIGH-VOLTAGE IMPLANTED RESURF P-LDMOS USING BICMOS TECHNOLOGY, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2132-2132
Authors:
DEBRUYCKER A
ZHOU MJ
VANCALSTER A
WITTERS J
Citation: A. Debruycker et al., IMPROVED NEGATIVE DYNAMIC RESISTANCE MODEL FOR HIGH-VOLTAGE MOSFETS, Electronics Letters, 29(2), 1993, pp. 212-213
Authors:
ZHOU MJ
DEBRUYCKER A
VANCALSTER A
WITTERS J
SCHOLS G
Citation: Mj. Zhou et al., MODIFIED SPICE MODELING OF DC CHARACTERISTICS FOR HIGH-VOLTAGE DMOS TRANSISTORS, Electronics Letters, 29(1), 1993, pp. 126-127
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