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Results: 1-19 |
Results: 19
PROXIMITY EFFECTS CORRECTION FOR ADVANCED OPTICAL LITHOGRAPHY PROCESSES
Authors: TRITCHKOV A FINDERS J RANDALL J RONSE K VANDENHOVE L
Citation: A. Tritchkov et al., PROXIMITY EFFECTS CORRECTION FOR ADVANCED OPTICAL LITHOGRAPHY PROCESSES, JPN J A P 1, 37(6A), 1998, pp. 3585-3593
FEASIBILITY OF 250 NM GATE PATTERNING USING I-LINE WITH OPC
Authors: VANDRIESSCHE V FINDERS J TRITCHKOV A RONSE K VANDENHOVE L TZVIATKOV P
Citation: V. Vandriessche et al., FEASIBILITY OF 250 NM GATE PATTERNING USING I-LINE WITH OPC, Microelectronic engineering, 42, 1998, pp. 111-115
MANUFACTURABLE DUV LITHOGRAPHY PROCESSES FOR 0.25-MU-M TECHNOLOGY CONTACT AND VIA LAYERS
Authors: BAKER D OPDEBEECK M BOTERMANS H VANDENHOVE L
Citation: D. Baker et al., MANUFACTURABLE DUV LITHOGRAPHY PROCESSES FOR 0.25-MU-M TECHNOLOGY CONTACT AND VIA LAYERS, Microelectronic engineering, 35(1-4), 1997, pp. 517-522
OPTIMIZING I-LINE LITHOGRAPHY FOR 0.3-MU-M POLY-GATE MANUFACTURING
Authors: FINDERS J TZVIATKOV P RONSE K VANDENHOVE L
Citation: J. Finders et al., OPTIMIZING I-LINE LITHOGRAPHY FOR 0.3-MU-M POLY-GATE MANUFACTURING, Solid state technology, 40(3), 1997, pp. 5
CHARACTERIZATION AND CORRECTION OF OPTICAL PROXIMITY EFFECTS IN DEEP-ULTRAVIOLET LITHOGRAPHY USING BEHAVIOR MODELING
Authors: YEN A TRITCHKOV A STIRNIMAN JP VANDENBERGHE G JONCKHEERE R RONSE K VANDENHOVE L
Citation: A. Yen et al., CHARACTERIZATION AND CORRECTION OF OPTICAL PROXIMITY EFFECTS IN DEEP-ULTRAVIOLET LITHOGRAPHY USING BEHAVIOR MODELING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4175-4178
THE EFFECT OF PLASMIN ON PLATELET-FUNCTION
Authors: BLOCKMANS D DECKMYN H VANDENHOVE L VERMYLEN J
Citation: D. Blockmans et al., THE EFFECT OF PLASMIN ON PLATELET-FUNCTION, Platelets, 7(3), 1996, pp. 139-148
OPTICAL PROXIMITY CORRECTION - MASK PATTERN-GENERATION CHALLENGES
Authors: JONCKHEERE R WONG A YEN A RONSE K VANDENHOVE L
Citation: R. Jonckheere et al., OPTICAL PROXIMITY CORRECTION - MASK PATTERN-GENERATION CHALLENGES, Microelectronic engineering, 30(1-4), 1996, pp. 115-118
OPTICAL PROXIMITY CORRECTION FOR 0.3 MU-M I-LINE LITHOGRAPHY
Authors: YEN A TZVIATKOV P WONG A JUFFERMANS C JONCKHEERE R JAENEN P GAROFALO J OTTO O RONSE K VANDENHOVE L
Citation: A. Yen et al., OPTICAL PROXIMITY CORRECTION FOR 0.3 MU-M I-LINE LITHOGRAPHY, Microelectronic engineering, 30(1-4), 1996, pp. 141-144
USE OF POSITIVE AND NEGATIVE CHEMICALLY AMPLIFIED RESISTS IN ELECTRON-BEAM DIRECT-WRITE LITHOGRAPHY
Authors: TRITCHKOV A JONCKHEERE R VANDENHOVE L
Citation: A. Tritchkov et al., USE OF POSITIVE AND NEGATIVE CHEMICALLY AMPLIFIED RESISTS IN ELECTRON-BEAM DIRECT-WRITE LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2986-2993
ELECTRON-BEAM DUV INTRA-LEVEL MIX-AND-MATCH LITHOGRAPHY FOR RANDOM LOGIC 0.25-MU-M CMOS
Authors: JONCKHEERE R TRITCHKOV A VANDRIESSCHE V VANDENHOVE L
Citation: R. Jonckheere et al., ELECTRON-BEAM DUV INTRA-LEVEL MIX-AND-MATCH LITHOGRAPHY FOR RANDOM LOGIC 0.25-MU-M CMOS, Microelectronic engineering, 27(1-4), 1995, pp. 231-234
DUV LITHOGRAPHY FOR 0.35-MU-M CMOS PROCESSING
Authors: VANDRIESSCHE V GOETHALS AM DEBEECK MO RONSE K VANDENHOVE L
Citation: V. Vandriessche et al., DUV LITHOGRAPHY FOR 0.35-MU-M CMOS PROCESSING, Microelectronic engineering, 27(1-4), 1995, pp. 243-246
CHALLENGES FOR 0.35-0.25-MU-M OPTICAL LITHOGRAPHY
Authors: VANDENHOVE L RONSE K
Citation: L. Vandenhove et K. Ronse, CHALLENGES FOR 0.35-0.25-MU-M OPTICAL LITHOGRAPHY, Microelectronic engineering, 27(1-4), 1995, pp. 357-365
MOLYBDENUM SILICIDE BASED ATTENUATED PHASE-SHIFT MASKS
Authors: JONCKHEERE R RONSE K POPA O VANDENHOVE L
Citation: R. Jonckheere et al., MOLYBDENUM SILICIDE BASED ATTENUATED PHASE-SHIFT MASKS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3765-3772
EXTENDING THE LIMITS OF OPTICAL LITHOGRAPHY FOR ARBITRARY MASK LAYOUTS USING ATTENUATED PHASE-SHIFTING MASKS WITH OPTIMIZED ILLUMINATION
Authors: RONSE K PFORR R BAIK KH JONCKHEERE R VANDENHOVE L
Citation: K. Ronse et al., EXTENDING THE LIMITS OF OPTICAL LITHOGRAPHY FOR ARBITRARY MASK LAYOUTS USING ATTENUATED PHASE-SHIFTING MASKS WITH OPTIMIZED ILLUMINATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3783-3792
THE ADEQUAT PROJECT FOR DEVELOPMENT AND TRANSFER OF 0.25 MU-M LOGIC COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR MODULES
Authors: DEKEERSMAECKER R DECLERCK G FELIX P HAOND M HILL C JANSSEN G LORENZ J MAES H MONTREE A NEPPL F PATRUNO P RUDAN M RYSSEL H VANDENHOVE L VANDERVORST W VANOMMEN A
Citation: R. Dekeersmaecker et al., THE ADEQUAT PROJECT FOR DEVELOPMENT AND TRANSFER OF 0.25 MU-M LOGIC COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR MODULES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2852-2859
FUNDAMENTAL PRINCIPLES OF PHASE-SHIFTING MASKS BY FOURIER OPTICS - THEORY AND EXPERIMENTAL-VERIFICATION
Authors: RONSE K DEBEECK MO VANDENHOVE L
Citation: K. Ronse et al., FUNDAMENTAL PRINCIPLES OF PHASE-SHIFTING MASKS BY FOURIER OPTICS - THEORY AND EXPERIMENTAL-VERIFICATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 589-600
ATTENUATED PHASE-SHIFTING MASKS IN COMBINATION WITH OFF-AXIS ILLUMINATION - A WAY TOWARDS QUARTER MICRON DUV LITHOGRAPHY FOR RANDOM LOGIC APPLICATIONS
Authors: RONSE K PFORR R BAIK KH JONCKHEERE R VANDENHOVE L
Citation: K. Ronse et al., ATTENUATED PHASE-SHIFTING MASKS IN COMBINATION WITH OFF-AXIS ILLUMINATION - A WAY TOWARDS QUARTER MICRON DUV LITHOGRAPHY FOR RANDOM LOGIC APPLICATIONS, Microelectronic engineering, 23(1-4), 1994, pp. 133-138
LITHOGRAPHIC EVALUATION OF A NEW WET SILYLATION PROCESS USING SAFE SOLVENTS AND THE COMMERCIAL PHOTORESIST AZ 5214E(TM)
Authors: GOGOLIDES E BAIK KH YANNAKOPOULOU K VANDENHOVE L HATZAKIS M
Citation: E. Gogolides et al., LITHOGRAPHIC EVALUATION OF A NEW WET SILYLATION PROCESS USING SAFE SOLVENTS AND THE COMMERCIAL PHOTORESIST AZ 5214E(TM), Microelectronic engineering, 23(1-4), 1994, pp. 267-270
STABILITY OF SILYLATED IMAGES FOR APPLICATION TO DRY DEVELOPABLE DEEP-UV LITHOGRAPHY
Authors: GOETHALS AM BAIK KH RONSE K VANDENHOVE L ROLAND B
Citation: Am. Goethals et al., STABILITY OF SILYLATED IMAGES FOR APPLICATION TO DRY DEVELOPABLE DEEP-UV LITHOGRAPHY, Microelectronic engineering, 21(1-4), 1993, pp. 239-244
Risultati: 1-19 |