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Results: 1-10 |
Results: 10
CHARGE-SEPARATED STATE IN STRAIN-INDUCED QUANTUM DOTS
Authors: GU Y STURGE MD KASH K WATKINS N VANDERGAAG BP GOZDZ AS FLOREZ LT HARBISON JP
Citation: Y. Gu et al., CHARGE-SEPARATED STATE IN STRAIN-INDUCED QUANTUM DOTS, Applied physics letters, 70(13), 1997, pp. 1733-1735
LONG-LIVED INTERMEDIATE STATE IN STRAIN-CONFINED QUANTUM DOTS
Authors: GU YT STURGE MD KASH K VANDERGAAG BP GOZDZ AS FLOREZ LT HARBISON JP
Citation: Yt. Gu et al., LONG-LIVED INTERMEDIATE STATE IN STRAIN-CONFINED QUANTUM DOTS, Superlattices and microstructures, 19(2), 1996, pp. 131-136
TEMPERATURE-DEPENDENT TIME-RESOLVED EXCITON LUMINESCENCE IN GAAS ALGAAS QUANTUM WIRES AND DOTS/
Authors: ZHANG Y STURGE MD KASH K VANDERGAAG BP GOZDZ AS FLOREZ LT HARBISON JP
Citation: Y. Zhang et al., TEMPERATURE-DEPENDENT TIME-RESOLVED EXCITON LUMINESCENCE IN GAAS ALGAAS QUANTUM WIRES AND DOTS/, Superlattices and microstructures, 17(2), 1995, pp. 201-212
STRAIN-CONFINED WIRES AND DOTS AT A GAAS ALXGA1-XAS INTERFACE/
Authors: GU YT ZHANG Y STURGE MD KASH K VANDERGAAG BP GOZDZ AS FLOREZ LT HARBISON JP
Citation: Yt. Gu et al., STRAIN-CONFINED WIRES AND DOTS AT A GAAS ALXGA1-XAS INTERFACE/, Superlattices and microstructures, 17(1), 1995, pp. 67-71
ULTRA-HIGH-SPEED INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: SONG JI HONG BWP PALMSTROM CJ VANDERGAAG BP CHOUGH KB
Citation: Ji. Song et al., ULTRA-HIGH-SPEED INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, IEEE electron device letters, 15(3), 1994, pp. 94-96
TRANSIENT PHOTOLUMINESCENCE OF GAAS ALGAAS QUANTUM WIRES/
Authors: ZHANG Y STURGE MD KASH K VANDERGAAG BP GOZDZ AS FLOREZ LT HARBISON JP
Citation: Y. Zhang et al., TRANSIENT PHOTOLUMINESCENCE OF GAAS ALGAAS QUANTUM WIRES/, Journal of luminescence, 60-1, 1994, pp. 400-403
MILLIMETER-WAVE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A SUBPICOSECOND EXTRINSIC DELAY-TIME/
Authors: SONG JI HONG WP PALMSTROM CJ VANDERGAAG BP CHOUGH KB
Citation: Ji. Song et al., MILLIMETER-WAVE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A SUBPICOSECOND EXTRINSIC DELAY-TIME/, Electronics Letters, 30(5), 1994, pp. 456-457
GROWTH OF HEAVY CARBON-DOPED GALNAS LATTICE-MATCHED TO INP BY CHEMICAL BEAM EPITAXY
Authors: PALMSTROM CJ VANDERGAAG BP SONG JI HONG WP SCHWARZ SA NOVAK S
Citation: Cj. Palmstrom et al., GROWTH OF HEAVY CARBON-DOPED GALNAS LATTICE-MATCHED TO INP BY CHEMICAL BEAM EPITAXY, Applied physics letters, 64(23), 1994, pp. 3139-3141
HIGH-PERFORMANCE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGHLY CARBON-DOPED BASE GROWN BY CHEMICAL BEAM EPITAXY/
Authors: SONG JI PALMSTROM CJ VANDERGAAG BP HONG WP HAYES JR CHOUGH KB
Citation: Ji. Song et al., HIGH-PERFORMANCE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGHLY CARBON-DOPED BASE GROWN BY CHEMICAL BEAM EPITAXY/, Electronics Letters, 29(8), 1993, pp. 666-667
MICROWAVE CHARACTERISTICS OF A CARBON-DOPED BASE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY/
Authors: SONG JI HONG WP PALMSTROM CJ HAYES JR CHOUGH KB VANDERGAAG BP
Citation: Ji. Song et al., MICROWAVE CHARACTERISTICS OF A CARBON-DOPED BASE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY/, Electronics Letters, 29(21), 1993, pp. 1893-1894
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