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Results: 1-10 |
Results: 10
PHOTOLUMINESCENCE AND STRUCTURAL DEFECTS IN ERBIUM-IMPLANTED SILICON ANNEALED AT HIGH-TEMPERATURE
Authors: SOBOLEV NA GUSEV OB SHEK EI VDOVIN VI YUGOVA TG EMELYANOV AM
Citation: Na. Sobolev et al., PHOTOLUMINESCENCE AND STRUCTURAL DEFECTS IN ERBIUM-IMPLANTED SILICON ANNEALED AT HIGH-TEMPERATURE, Applied physics letters, 72(25), 1998, pp. 3326-3328
NATURE AND ORIGIN OF PURE EDGE DISLOCATIONS IN LOW MISMATCHED EPITAXIAL STRUCTURES
Authors: VDOVIN VI
Citation: Vi. Vdovin, NATURE AND ORIGIN OF PURE EDGE DISLOCATIONS IN LOW MISMATCHED EPITAXIAL STRUCTURES, Journal of crystal growth, 172(1-2), 1997, pp. 58-63
MECHANISM OF DISLOCATION GENERATION IN HE TEROSTRUCTURES BASED ON SIGE ALLOYS
Authors: VDOVIN VI MILVIDSKII MG JUGOVA TI
Citation: Vi. Vdovin et al., MECHANISM OF DISLOCATION GENERATION IN HE TEROSTRUCTURES BASED ON SIGE ALLOYS, Kristallografia, 41(6), 1996, pp. 1087-1092
STRUCTURE AND RAMAN-SCATTERING SPECTRA OF GE-SI SUPERLATTICES GROWN BY THE HYDRIDE METHOD
Authors: KUZNETSOV OA ORLOV LK KALUGIN NG DROZDOV YN DROZDOV MN VDOVIN VI MILVIDSKII MG
Citation: Oa. Kuznetsov et al., STRUCTURE AND RAMAN-SCATTERING SPECTRA OF GE-SI SUPERLATTICES GROWN BY THE HYDRIDE METHOD, Fizika tverdogo tela, 36(3), 1994, pp. 726-735
ON A DIFFUSION MECHANISM OF INTRINSIC STRESS-RELAXATION IN AUGE-GAAS CONTACTS
Authors: TKHORIK YA VDOVIN VI KHAZAN LS KONAKOVA RV MILENIN VV NAUMOVETS AA
Citation: Ya. Tkhorik et al., ON A DIFFUSION MECHANISM OF INTRINSIC STRESS-RELAXATION IN AUGE-GAAS CONTACTS, Thin solid films, 238(1), 1994, pp. 51-53
EFFECT OF ALLOY COMPOSITION ON DEFECT FORMATION IN GEXSI1-X SI HETEROSTRUCTURES OBTAINED BY MOLECULAR-BEAM EPITAXY
Authors: VDOVIN VI MILVIDSKII MG YUGOVA TG LYUTOVICH KL SAIDOV SM
Citation: Vi. Vdovin et al., EFFECT OF ALLOY COMPOSITION ON DEFECT FORMATION IN GEXSI1-X SI HETEROSTRUCTURES OBTAINED BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 141(1-2), 1994, pp. 109-118
SUPERLATTICES OF THE GE-GE1-XSIX TYPE FABRICATED BY THE HYDRIDE METHOD
Authors: KUZNETSOV OA ORLOV LK DROZDOV YN VOROTYNTSEV VM MILVIDSKII MG VDOVIN VI CARLES R LANDA G
Citation: Oa. Kuznetsov et al., SUPERLATTICES OF THE GE-GE1-XSIX TYPE FABRICATED BY THE HYDRIDE METHOD, Semiconductors, 27(10), 1993, pp. 878-883
NEW MECHANISM OF THE FORMATION OF BOUNDAR Y NONCORRESPONDENCE DISLOCATIONS IN EPITAXIAL STRUCTURES
Authors: VDOVIN VI KHAZAN LS
Citation: Vi. Vdovin et Ls. Khazan, NEW MECHANISM OF THE FORMATION OF BOUNDAR Y NONCORRESPONDENCE DISLOCATIONS IN EPITAXIAL STRUCTURES, Kristallografia, 38(5), 1993, pp. 164-170
DEFECT-FORMING IN SIXGE1-X GE(111) HETERO STRUCTURES PREPARED BY THE HYDRIDE EPITAXY TECHNIQUE/
Authors: VDOVIN VI KUZNETSOV OA MILVIDSKII MG ORLOV LK YUGOVA TG
Citation: Vi. Vdovin et al., DEFECT-FORMING IN SIXGE1-X GE(111) HETERO STRUCTURES PREPARED BY THE HYDRIDE EPITAXY TECHNIQUE/, Kristallografia, 38(4), 1993, pp. 269-271
ANTIPHASE BOUNDARIES IN GAAS-LAYERS ON SI AND GE
Authors: VDOVIN VI MILVIDSKII MG YUGOVA TG
Citation: Vi. Vdovin et al., ANTIPHASE BOUNDARIES IN GAAS-LAYERS ON SI AND GE, Journal of crystal growth, 132(3-4), 1993, pp. 477-482
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