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Results: 1-10 |
Results: 10
PHOTOCURRENT AMPLIFICATION IN AU SIO2/N-6H-SIC MOS STRUCTURES WITH A TUNNEL-THIN INSULATOR/
Authors: GREKHOV IV VEKSLER MI IVANOV PA SAMSONOVA TP SHULEKIN AF
Citation: Iv. Grekhov et al., PHOTOCURRENT AMPLIFICATION IN AU SIO2/N-6H-SIC MOS STRUCTURES WITH A TUNNEL-THIN INSULATOR/, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 1024-1026
DEGRADATION OF MOS TUNNEL STRUCTURES AT HIGH-CURRENT DENSITY
Authors: GREKHOV IV SHULEKIN AF VEKSLER MI
Citation: Iv. Grekhov et al., DEGRADATION OF MOS TUNNEL STRUCTURES AT HIGH-CURRENT DENSITY, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 668-672
TUNNEL METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURE WITH A HIGH-CURRENT DENSITY (REVERSE-BIAS MODE)
Authors: VEKSLER MI
Citation: Mi. Veksler, TUNNEL METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURE WITH A HIGH-CURRENT DENSITY (REVERSE-BIAS MODE), Semiconductors, 30(9), 1996, pp. 899-903
ELECTRICAL-PROPERTIES OF AU CAF2/N-SI[111] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY WITH ULTRATHIN (LESS-THAN 20NM) CAF2 LAYERS/
Authors: ALVAREZ JC VEKSLER MI GREKHOV IV SOKOLOV NS SHULEKIN AF
Citation: Jc. Alvarez et al., ELECTRICAL-PROPERTIES OF AU CAF2/N-SI[111] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY WITH ULTRATHIN (LESS-THAN 20NM) CAF2 LAYERS/, Semiconductors, 30(7), 1996, pp. 698-701
SUPPRESSION OF EMITTER CURRENT CROWDING IN AUGER TRANSISTORS
Authors: BELOV SV VEKSLER MI GREKHOV IV SHULEKIN AF
Citation: Sv. Belov et al., SUPPRESSION OF EMITTER CURRENT CROWDING IN AUGER TRANSISTORS, Semiconductors, 30(10), 1996, pp. 962-966
STM-CONTACT WITH HYDROGEN-PASSIVATED N-TY PE SILICON SURFACE AS THE POINTED AUGER-TRANSISTOR WITH TUNNEL MOS-EMITTER
Authors: BOLOTOV LN MAKARENKO IB TIMKOV AN VEKSLER MI GREKHOV IV SHULEKIN AF
Citation: Ln. Bolotov et al., STM-CONTACT WITH HYDROGEN-PASSIVATED N-TY PE SILICON SURFACE AS THE POINTED AUGER-TRANSISTOR WITH TUNNEL MOS-EMITTER, Fizika tverdogo tela, 38(3), 1996, pp. 889-900
INSTABILITIES OF CURRENT DISTRIBUTION ON SURFACE IN SILICON AUGER-TRANSISTOR WITH TUNNEL MOS-EMITTERS
Authors: BELOV SV VEKSLER MI GREKHOV IV SHULEKIN AF
Citation: Sv. Belov et al., INSTABILITIES OF CURRENT DISTRIBUTION ON SURFACE IN SILICON AUGER-TRANSISTOR WITH TUNNEL MOS-EMITTERS, Pis'ma v Zurnal tehniceskoj fiziki, 22(3), 1996, pp. 42-47
MECHANISM SHAPING THE STEADY-STATE REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF MIS STRUCTURES WITH CHARGE-TRANSPORT
Authors: GREKHOV IV SHULEKIN AF VEKSLER MI
Citation: Iv. Grekhov et al., MECHANISM SHAPING THE STEADY-STATE REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF MIS STRUCTURES WITH CHARGE-TRANSPORT, Semiconductors, 29(2), 1995, pp. 113-115
ELECTROLUMINESCENCE OF SILICON TUNNEL MDC -STRUCTURES
Authors: VEKSLER MI GREKHOV IV SOLOVEV SA TKACHENKO AG SHULEIKIN AF
Citation: Mi. Veksler et al., ELECTROLUMINESCENCE OF SILICON TUNNEL MDC -STRUCTURES, Pis'ma v Zurnal tehniceskoj fiziki, 21(13), 1995, pp. 81-86
STATIC CHARACTERISTICS OF A SILICON AUGER TRANSISTOR WITH A TUNNEL MOS EMITTER AND AN INDUCED BASE
Authors: GREKHOV IV SHULEKIN AF VEKSLER MI
Citation: Iv. Grekhov et al., STATIC CHARACTERISTICS OF A SILICON AUGER TRANSISTOR WITH A TUNNEL MOS EMITTER AND AN INDUCED BASE, Semiconductors, 27(1), 1993, pp. 46-49
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