Authors:
GREKHOV IV
VEKSLER MI
IVANOV PA
SAMSONOVA TP
SHULEKIN AF
Citation: Iv. Grekhov et al., PHOTOCURRENT AMPLIFICATION IN AU SIO2/N-6H-SIC MOS STRUCTURES WITH A TUNNEL-THIN INSULATOR/, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 1024-1026
Citation: Mi. Veksler, TUNNEL METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURE WITH A HIGH-CURRENT DENSITY (REVERSE-BIAS MODE), Semiconductors, 30(9), 1996, pp. 899-903
Authors:
ALVAREZ JC
VEKSLER MI
GREKHOV IV
SOKOLOV NS
SHULEKIN AF
Citation: Jc. Alvarez et al., ELECTRICAL-PROPERTIES OF AU CAF2/N-SI[111] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY WITH ULTRATHIN (LESS-THAN 20NM) CAF2 LAYERS/, Semiconductors, 30(7), 1996, pp. 698-701
Authors:
BOLOTOV LN
MAKARENKO IB
TIMKOV AN
VEKSLER MI
GREKHOV IV
SHULEKIN AF
Citation: Ln. Bolotov et al., STM-CONTACT WITH HYDROGEN-PASSIVATED N-TY PE SILICON SURFACE AS THE POINTED AUGER-TRANSISTOR WITH TUNNEL MOS-EMITTER, Fizika tverdogo tela, 38(3), 1996, pp. 889-900
Authors:
BELOV SV
VEKSLER MI
GREKHOV IV
SHULEKIN AF
Citation: Sv. Belov et al., INSTABILITIES OF CURRENT DISTRIBUTION ON SURFACE IN SILICON AUGER-TRANSISTOR WITH TUNNEL MOS-EMITTERS, Pis'ma v Zurnal tehniceskoj fiziki, 22(3), 1996, pp. 42-47
Citation: Iv. Grekhov et al., MECHANISM SHAPING THE STEADY-STATE REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF MIS STRUCTURES WITH CHARGE-TRANSPORT, Semiconductors, 29(2), 1995, pp. 113-115
Citation: Iv. Grekhov et al., STATIC CHARACTERISTICS OF A SILICON AUGER TRANSISTOR WITH A TUNNEL MOS EMITTER AND AN INDUCED BASE, Semiconductors, 27(1), 1993, pp. 46-49