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Results:
1-9
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Results: 9
Authors:
LLINARES P
NIEL S
GHIBAUDO G
VENDRAME L
CHROBOCZEK JA
Citation: P. Llinares et al., RETARDING EFFECT OF SURFACE BASE COMPENSATION ON DEGRADATION OF NOISECHARACTERISTICS OF BICMOS BJTS, Microelectronics and reliability, 37(10-11), 1997, pp. 1603-1606
Authors:
NEVIANI A
PAVAN P
NARDI A
CHANTRE A
VENDRAME L
ZANONI E
Citation: A. Neviani et al., HOT-CARRIER DEGRADATION AND OXIDE CHARGE BUILDUP IN SELF-ALIGNED ETCHED-POLYSILICON NPN BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 2059-2063
Authors:
DEPONTCHARRA J
BEHOUCHE E
AILLOUD L
THOMAS D
VENDRAME L
GRAVIER T
CHANTRE A
Citation: J. Depontcharra et al., A 30-GHZ F(T) QUASI-SELF-ALIGNED SINGLE-POLY BIPOLAR TECHNOLOGY, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 2091-2097
Authors:
VERZELLESI G
DALFABBRO A
PAVAN P
VENDRAME L
ZABOTTO E
ZANINI A
CHANTRE A
ZANONI E
Citation: G. Verzellesi et al., SPICE MODELING OF IMPACT IONIZATION EFFECTS IN SILICON BIPOLAR-TRANSISTORS, IEE proceedings. Circuits, devices and systems, 143(1), 1996, pp. 33-40
Authors:
VENDRAME L
GRAVIER T
KIRTSCH J
MONROY A
CHANTRE A
Citation: L. Vendrame et al., RELIABILITY IMPROVEMENT OF SINGLE-POLY QUASI SELF-ALIGNED BICMOS BJTSUSING BASE SURFACE ARSENIC COMPENSATION, Microelectronics and reliability, 36(11-12), 1996, pp. 1827-1830
Authors:
CANALI C
PAVAN P
DICARLO A
LUGLI P
MALIK R
MANFREDI M
NEVIANI A
VENDRAME L
ZANONI E
ZANDLER G
Citation: C. Canali et al., EXPERIMENTAL AND MONTE-CARLO ANALYSIS OF IMPACT-IONIZATION IN ALGAAS GAAS HBTS/, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1769-1777
Authors:
VENDRAME L
ZABOTTO E
DALFABBRO A
ZANINI A
VERZELLESI G
ZANONI E
CHANTRE A
PAVAN P
Citation: L. Vendrame et al., INFLUENCE OF IMPACT-IONIZATION-INDUCED BASE CURRENT REVERSAL ON BIPOLAR-TRANSISTOR PARAMETERS, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1636-1646
Authors:
CANALI C
FORZAN C
NEVIANI A
VENDRAME L
ZANONI E
HAMM RA
MALIK RJ
CAPASSO F
CHANDRASEKHAR S
Citation: C. Canali et al., MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN INGAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS, Applied physics letters, 66(9), 1995, pp. 1095-1097
Authors:
VERZELLESI G
BACCARANI G
CANALI C
PAVAN P
VENDRAME L
ZANONI E
Citation: G. Verzellesi et al., PREDICTION OF IMPACT-IONIZATION-INDUCED SNAP-BACK IN ADVANCED SI N-P-N BJTS BY MEANS OF A NONLOCAL ANALYTICAL MODEL FOR THE AVALANCHE MULTIPLICATION FACTOR, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2296-2300
Risultati:
1-9
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