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Results:
1-19
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Results: 19
Authors:
Ryzhii, V
Tsutsui, N
Khmyrova, I
Ikegami, T
Vaccaro, PO
Taniyama, H
Aida, T
Citation: V. Ryzhii et al., Steady-state characteristics of lateral p-n junction vertical-cavity surface-emitting lasers, J APPL PHYS, 90(6), 2001, pp. 2654-2659
Authors:
Tsutsui, N
Ryzhii, V
Khmyrova, I
Vaccaro, PO
Taniyama, H
Aida, T
Citation: N. Tsutsui et al., High-frequency performance of lateral p-n junction photodiodes, IEEE J Q EL, 37(6), 2001, pp. 830-836
Authors:
Vaccaro, PO
Kubota, K
Aida, T
Citation: Po. Vaccaro et al., Strain-driven self-positioning of micromachined structures, APPL PHYS L, 78(19), 2001, pp. 2852-2854
Authors:
Domoto, C
Vaccaro, PO
Ohtani, N
Citation: C. Domoto et al., Population inversion between subbands in simple periodical GaAs/AlAs superlattices, IEE P-OPTO, 147(3), 2000, pp. 225-228
Authors:
Asai, K
Feng, JM
Vaccaro, PO
Fujita, K
Ohachi, T
Citation: K. Asai et al., Possibility of a quasi-liquid layer of As on GaAs substrate grown by MBE as observed by enhancement of Ga desorption at high As pressure, APPL SURF S, 159, 2000, pp. 301-307
Authors:
Sugimura, A
Ohnishi, K
Umezu, I
Vaccaro, PO
Citation: A. Sugimura et al., Optical properties of self-assembled InAs quantum dots grown on GaAs(211)Asubstrate, THIN SOL FI, 380(1-2), 2000, pp. 97-100
Authors:
Villar, C
Sanz-Hervas, A
Aguilar, M
Vaccaro, PO
Abril, EJ
Lopez, M
Fujita, K
Citation: C. Villar et al., High-resolution X-ray diffraction study of AlAs/Al0.5Ga0.5As/GaAs quantum well structures grown by molecular beam epitaxy on (11 n)A GaAs, J CRYST GR, 213(3-4), 2000, pp. 214-220
Authors:
Vaccaro, PO
Fujita, K
Citation: Po. Vaccaro et K. Fujita, Optoelectronic devices based on lateral p-n junctions fabricated by molecular-beam epitaxy growth of silicon-doped GaAs on patterned (311)A-oriented substrates, IEEE J Q EL, 36(7), 2000, pp. 849-857
Authors:
Domoto, C
Ohtani, N
Kuroyanagi, K
Vaccaro, PO
Takeuchi, H
Nakayama, M
Nishimura, T
Citation: C. Domoto et al., Intersubband electroluminescence using X-Gamma carrier injection in a GaAs/AlAs superlattice, APPL PHYS L, 77(6), 2000, pp. 848-850
Authors:
De Vittorio, M
Vaccaro, PO
De Giorgi, M
De Rinaldis, S
Cingolani, R
Citation: M. De Vittorio et al., Local degradation of selectively oxidized AlGaAs/AlAs distributed Bragg reflectors in lateral-injection vertical-cavity surface-emitting lasers, APPL PHYS L, 77(24), 2000, pp. 3905-3907
Authors:
Domoto, C
Ohtani, N
Kuroyanagi, K
Vaccaro, PO
Egami, N
Citation: C. Domoto et al., Electroluminescence in undoped GaAs/AlAs superlattice due to avalanche breakdown, JPN J A P 1, 38(4B), 1999, pp. 2577-2579
Authors:
Vaccaro, PO
Koizumi, K
Fujita, K
Ohashi, T
Citation: Po. Vaccaro et al., AlAs oxidation process in GaAs/AlGaAs/AlAs heterostructures grown by molecular beam epitaxy on GaAs (n11)A substrates, MICROELEC J, 30(4-5), 1999, pp. 387-391
Authors:
Feng, JM
Tateuchi, M
Asai, K
Uwani, M
Vaccaro, PO
Fujita, K
Ohachi, T
Citation: Jm. Feng et al., Optical transitions of Al0.35Ga0.65As/GaAs asymmetric double quantum wellsgrown on GaAs(n11)A (n <= 4) substrates, MICROELEC J, 30(4-5), 1999, pp. 433-437
Authors:
Ohachi, T
Feng, JM
Asai, K
Uwani, M
Tateuchi, M
Vaccaro, PO
Fujita, K
Citation: T. Ohachi et al., Arsenic vapor pressure dependence of surface morphology and silicon dopingin molecular beam epitaxial grown GaAs (n11)A (n = 1-4) substrates, MICROELEC J, 30(4-5), 1999, pp. 471-476
Authors:
Ohachi, T
Feng, JM
Asai, K
Uwani, M
Tateuchi, M
Vaccaro, PO
Fujita, K
Citation: T. Ohachi et al., MBE growth of AlGaAs GaAs heterostructure and silicon doping on GaAs(n 1 1)A (n=1-4) substrates, J CRYST GR, 202, 1999, pp. 226-231
Authors:
Koizumi, K
Vaccaro, PO
Fujita, K
Tateuchi, M
Ohachi, T
Citation: K. Koizumi et al., Lateral wet oxidation of AlAs layer in GaAs/AlAs heterostructures grown byMBE on GaAs (n 1 1)A substrates, J CRYST GR, 199, 1999, pp. 1136-1140
Authors:
Lomascolo, M
Cingolani, R
Vaccaro, PO
Fujita, K
Citation: M. Lomascolo et al., Time resolved magneto-optical spectroscopy on InGaAs nanostructures grown on (311) A and (100)-oriented substrates, APPL PHYS L, 74(5), 1999, pp. 676-678
Authors:
Vaccaro, PO
Ohnishi, H
Fujita, K
Citation: Po. Vaccaro et al., Lateral-junction vertical-cavity surface-emitting laser grown by molecular-beam epitaxy on a GaAs (311) A-oriented substrate, APPL PHYS L, 74(25), 1999, pp. 3854-3856
Authors:
Vaccaro, PO
Sakata, S
Yamaoka, S
Umezu, I
Sugimura, A
Citation: Po. Vaccaro et al., Nano-oxidation of vanadium thin films using atomic force microscopy, J MAT SCI L, 17(22), 1998, pp. 1941-1943
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