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Results: 1-9 |
Results: 9

Authors: Devine, RAB Vanheusden, K Herrera, GV
Citation: Rab. Devine et al., Correlation of mobile and fixed charge creation in protonated field-effecttransistors, APPL PHYS L, 77(4), 2000, pp. 579-581

Authors: Vanheusden, K Devine, RAB
Citation: K. Vanheusden et Rab. Devine, The role of interface states in hydrogen-annealing-induced mobile proton generation at the Si-SiO2 interface, APPL PHYS L, 76(21), 2000, pp. 3109-3111

Authors: Girault, V Devine, RAB Warren, WL Vanheusden, K
Citation: V. Girault et al., A study of proton generation in Si/SiO2/Si structures, MICROEL ENG, 48(1-4), 1999, pp. 167-170

Authors: Vanheusden, K Fleetwood, DM Devine, RAB Warren, WL
Citation: K. Vanheusden et al., Reactions and diffusion during annealing-induced H+ generation in SOI buried oxides, MICROEL ENG, 48(1-4), 1999, pp. 363-366

Authors: Vanheusden, K Warren, WL Devine, RAB Fleetwood, DM Draper, BL Schwank, JR
Citation: K. Vanheusden et al., A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films, J NON-CRYST, 254, 1999, pp. 1-10

Authors: Vanheusden, K Korambath, PP Kurtz, HA Karna, SP Fleetwood, DM Shedd, WM Pugh, RD
Citation: K. Vanheusden et al., The effect of near-interface network strain on proton trapping in SiO2, IEEE NUCL S, 46(6), 1999, pp. 1562-1567

Authors: Vanheusden, K Warren, WL Fleetwood, DM Schwank, JR Shaneyfelt, MR Draper, BL Winokur, PS Devine, RAB Archer, LB Brown, GA Wallace, RM
Citation: K. Vanheusden et al., Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films, APPL PHYS L, 73(5), 1999, pp. 674-676

Authors: Rodriguez, MA Boyle, TJ Hernandez, BA Tallant, DR Vanheusden, K
Citation: Ma. Rodriguez et al., A new metastable thin-film strontium tantalate perovskite, J AM CERAM, 82(8), 1999, pp. 2101-2105

Authors: Vanheusden, K Fleetwood, DM Shaneyfelt, MR Draper, BL Schwank, JR
Citation: K. Vanheusden et al., The effects of irradiation and proton implantation on the density of mobile protons in SiO2 thin films, IEEE NUCL S, 45(6), 1998, pp. 2391-2397
Risultati: 1-9 |