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Results: 1-17 |
Results: 17
INTERFACE STATES INDUCED IN GAAS BY GROWTH INTERRUPTION DURING AN IN-SITU PROCESS
Authors: WAKAYA F MATSUBARA T NAKAYAMA M YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., INTERFACE STATES INDUCED IN GAAS BY GROWTH INTERRUPTION DURING AN IN-SITU PROCESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2313-2316
FOCUSED ION-BEAM ETCHING OF RESIST NI MULTILAYER FILMS AND APPLICATIONS TO METAL ISLAND STRUCTURE FORMATION
Authors: NAKAYAMA M WAKAYA F YANAGISAWA J GAMO K
Citation: M. Nakayama et al., FOCUSED ION-BEAM ETCHING OF RESIST NI MULTILAYER FILMS AND APPLICATIONS TO METAL ISLAND STRUCTURE FORMATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2511-2514
SINGLE-ELECTRON TUNNELING DEVICE WITH VARIABLE ENVIRONMENTAL IMPEDANCE
Authors: WAKAYA F YOSHIOKA F IWABUCHI S HIGURASHI H NAGAOKA Y GAMO K
Citation: F. Wakaya et al., SINGLE-ELECTRON TUNNELING DEVICE WITH VARIABLE ENVIRONMENTAL IMPEDANCE, Semiconductor science and technology, 13(8A), 1998, pp. 107-110
EFFECTS OF GROWTH INTERRUPTION IN IN-SITU PROCESS FOR BURIED QUANTUM STRUCTURES
Authors: WAKAYA F MATSUBARA T NAKAYAMA M YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., EFFECTS OF GROWTH INTERRUPTION IN IN-SITU PROCESS FOR BURIED QUANTUM STRUCTURES, Microelectronic engineering, 42, 1998, pp. 591-594
SINGLE-ELECTRON TUNNELING DEVICE CONTROLLED BY ENVIRONMENTAL IMPEDANCE MODULATION
Authors: WAKAYA F IWABUCHI S HIGURASHI H NAGAOKA Y GAMO K
Citation: F. Wakaya et al., SINGLE-ELECTRON TUNNELING DEVICE CONTROLLED BY ENVIRONMENTAL IMPEDANCE MODULATION, Solid-state electronics, 42(7-8), 1998, pp. 1401-1405
ELECTRON-BEAM-INDUCED OXIDATION FOR SINGLE-ELECTRON DEVICES
Authors: MATSUTANI M WAKAYA F TAKAOKA S MURASE K GAMO K
Citation: M. Matsutani et al., ELECTRON-BEAM-INDUCED OXIDATION FOR SINGLE-ELECTRON DEVICES, JPN J A P 1, 36(12B), 1997, pp. 7782-7785
CHARACTERIZATION OF SI-DOPED LAYER IN GAAS FABRICATED BY A FOCUSED ION-BEAM MOLECULAR-BEAM EPITAXY COMBINED SYSTEM
Authors: YANAGISAWA J NAKAYAMA H OKA K NAKAI M WAKAYA F YUBA Y TAKAOKA S MURASE K GAMO K
Citation: J. Yanagisawa et al., CHARACTERIZATION OF SI-DOPED LAYER IN GAAS FABRICATED BY A FOCUSED ION-BEAM MOLECULAR-BEAM EPITAXY COMBINED SYSTEM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2930-2933
FABRICATION OF BURIED QUANTUM STRUCTURES USING FIB-MBE TOTAL VACUUM PROCESS
Authors: WAKAYA F YANAGISAWA J MATSUBARA T NAKAYAMA H YUBA Y TAKAOKA S GAMO K
Citation: F. Wakaya et al., FABRICATION OF BURIED QUANTUM STRUCTURES USING FIB-MBE TOTAL VACUUM PROCESS, Microelectronic engineering, 35(1-4), 1997, pp. 451-454
CONFINEMENT POTENTIAL IN AN ASYMMETRICALLY BIASED QUANTUM POINT-CONTACT
Authors: WAKAYA F TAKAHARA J TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., CONFINEMENT POTENTIAL IN AN ASYMMETRICALLY BIASED QUANTUM POINT-CONTACT, JPN J A P 1, 35(2B), 1996, pp. 1329-1332
FABRICATION OF LATERALLY SELECTED SI DOPED LAYER IN GAAS USING A LOW-ENERGY FOCUSED ION-BEAM MOLECULAR-BEAM EPITAXY COMBINED SYSTEM
Authors: YANAGISAWA J NAKAYAMA H WAKAYA F YUBA Y GAMO K
Citation: J. Yanagisawa et al., FABRICATION OF LATERALLY SELECTED SI DOPED LAYER IN GAAS USING A LOW-ENERGY FOCUSED ION-BEAM MOLECULAR-BEAM EPITAXY COMBINED SYSTEM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3938-3941
EFFECTS OF GROWTH INTERRUPTION AND FIB IMPLANTATION IN THE UHV TOTAL VACUUM PROCESS FOR THE BURIED MESOSCOPIC STRUCTURES
Authors: WAKAYA F MATSUBARA T NAKAYAMA H YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., EFFECTS OF GROWTH INTERRUPTION AND FIB IMPLANTATION IN THE UHV TOTAL VACUUM PROCESS FOR THE BURIED MESOSCOPIC STRUCTURES, Physica. B, Condensed matter, 227(1-4), 1996, pp. 268-270
INVESTIGATION OF GROWTH INTERRUPTION IN THE UHV TOTAL VACUUM PROCESS FOR BURIED QUANTUM STRUCTURES
Authors: WAKAYA F MATSUBARA T YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., INVESTIGATION OF GROWTH INTERRUPTION IN THE UHV TOTAL VACUUM PROCESS FOR BURIED QUANTUM STRUCTURES, Microelectronic engineering, 30(1-4), 1996, pp. 475-478
NOVEL CLASS OF LOW-MOLECULAR-WEIGHT ORGANIC RESISTS FOR NANOMETER LITHOGRAPHY
Authors: YOSHIWA M KAGEYAMA H SHIROTA Y WAKAYA F GAMO K TAKAI M
Citation: M. Yoshiwa et al., NOVEL CLASS OF LOW-MOLECULAR-WEIGHT ORGANIC RESISTS FOR NANOMETER LITHOGRAPHY, Applied physics letters, 69(17), 1996, pp. 2605-2607
TRANSPORT-PROPERTIES AND FABRICATION OF COUPLED ELECTRON WAVE-GUIDES
Authors: WAKAYA F OTOI H YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K HASKO DG JONES GAC AHMED H
Citation: F. Wakaya et al., TRANSPORT-PROPERTIES AND FABRICATION OF COUPLED ELECTRON WAVE-GUIDES, JPN J A P 1, 34(8B), 1995, pp. 4446-4448
INVESTIGATION OF IN-SITU PROCESS FOR GAAS ALGAAS BURIED QUANTUM WIRES/
Authors: WAKAYA F UMEDA K YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., INVESTIGATION OF IN-SITU PROCESS FOR GAAS ALGAAS BURIED QUANTUM WIRES/, JPN J A P 1, 33(12B), 1994, pp. 7223-7227
LOW-ENERGY FOCUSED ION-BEAM AND BURIED ELECTRON WAVE-GUIDES FABRICATION
Authors: WAKAYA F NOZAWA A YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., LOW-ENERGY FOCUSED ION-BEAM AND BURIED ELECTRON WAVE-GUIDES FABRICATION, Microelectronic engineering, 23(1-4), 1994, pp. 123-126
TRANSPORT-PROPERTIES OF COUPLED ELECTRON WAVE-GUIDES BURIED IN HETEROSTRUCTURE
Authors: WAKAYA F YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., TRANSPORT-PROPERTIES OF COUPLED ELECTRON WAVE-GUIDES BURIED IN HETEROSTRUCTURE, JPN J A P 1, 32(12B), 1993, pp. 6242-6245
Risultati: 1-17 |