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Citation: Jr. Waldrop et Mf. Chang, NEGATIVE DIFFERENTIAL RESISTANCE OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - INFLUENCE OF EMITTER EDGE CURRENT/, IEEE electron device letters, 16(1), 1995, pp. 8-10
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Authors:
SULLIVAN GJ
SZWED MK
HARDWICK DA
HIGGINS JA
WALDROP JR
CHANG MF
Citation: Gj. Sullivan et al., IMPROVED THERMAL PERFORMANCE OF ALGAAS GAAS HBTS BY TRANSFERRING THE EPITAXIAL LAYERS TO HIGH-THERMAL-CONDUCTIVITY SUBSTRATES/, Electronics Letters, 29(21), 1993, pp. 1890-1891
Citation: Jr. Waldrop et Rw. Grant, SCHOTTKY-BARRIER HEIGHT AND INTERFACE CHEMISTRY OF ANNEALED METAL CONTACTS TO ALPHA-6H-SIC - CRYSTAL-FACE DEPENDENCE, Applied physics letters, 62(21), 1993, pp. 2685-2687