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Results: 1-16 |
Results: 16

Authors: CARPINELLI JM WEITERING HH PLUMMER EW
Citation: Jm. Carpinelli et al., CHARGE REARRANGEMENT IN THE GEXPB1-X GE(111) INTERFACE/, Surface science, 401(3), 1998, pp. 457-463

Authors: ERWIN SC WEITERING HH
Citation: Sc. Erwin et Hh. Weitering, THEORY OF THE HONEYCOMB CHAIN-CHANNEL RECONSTRUCTION OF M SI(111)-(3X1)/, Physical review letters, 81(11), 1998, pp. 2296-2299

Authors: LIN KC HOLLAND OW FELDMAN LC WEITERING HH
Citation: Kc. Lin et al., SURFACE CHARACTERIZATION OF SILICON-ON-INSULATOR MATERIAL, Applied physics letters, 72(18), 1998, pp. 2313-2315

Authors: KEMPA K BROIDO DA WEITERING HH
Citation: K. Kempa et al., CORRELATIONAL SWITCHING BETWEEN 3X1 AND 6X1 SURFACE RECONSTRUCTIONS ON SI(111) WITH SUBMONOLAYER AG ADSORPTION, Physica. B, Condensed matter, 230, 1997, pp. 800-802

Authors: WEITERING HH CARPINELLI JM
Citation: Hh. Weitering et Jm. Carpinelli, ELECTRONIC-PROPERTIES OF THE A GE(111) INTERFACE/, Surface science, 384(1-3), 1997, pp. 240-253

Authors: CARPINELLI JM WEITERING HH BARKOWIAK M STUMPF R PLUMMER EW
Citation: Jm. Carpinelli et al., SURFACE-CHARGE ORDERING TRANSITION - ALPHA-PHASE OF SN GE(111)/, Physical review letters, 79(15), 1997, pp. 2859-2862

Authors: WEITERING HH SHI X JOHNSON PD CHEN J DINARDO NJ KEMPA K
Citation: Hh. Weitering et al., MOTT INSULATING GROUND-STATE ON A TRIANGULAR SURFACE LATTICE, Physical review letters, 78(7), 1997, pp. 1331-1334

Authors: WEITERING HH SHI X ERWIN SC
Citation: Hh. Weitering et al., BAND DISPERSIONS OF THE PI-BONDED-CHAIN RECONSTRUCTION OF SI(111)3X1-LI - A CRITICAL-EVALUATION OF THEORY AND EXPERIMENT, Physical review. B, Condensed matter, 54(15), 1996, pp. 10585-10592

Authors: CARPINELLI JM WEITERING HH
Citation: Jm. Carpinelli et Hh. Weitering, LOW-TEMPERATURE RECONSTRUCTION PATHWAY TO THE SI(111)(ROOT-3X-ROOT-3)R30-DEGREES-AG INTERFACE, Physical review. B, Condensed matter, 53(19), 1996, pp. 12651-12654

Authors: WEITERING HH
Citation: Hh. Weitering, NEW BARIUM-INDUCED SURFACE RECONSTRUCTIONS ON SI(111), Surface science, 355(1-3), 1996, pp. 271-277

Authors: WEITERING HH SULLIVAN JP CAROLISSEN RJ PEREZSANDOZ R GRAHAM WR TUNG RT
Citation: Hh. Weitering et al., INHOMOGENEOUS SCHOTTKY BARRIERS AT AG SI(111) AND AG/SI(100) INTERFACES/, Journal of applied physics, 79(10), 1996, pp. 7820-7829

Authors: CARPINELLI JM WEITERING HH
Citation: Jm. Carpinelli et Hh. Weitering, SCANNING-TUNNELING-MICROSCOPY STUDY OF THE METAL-INDUCED SI(111)3X1 RECONSTRUCTION - EVIDENCE FOR DIMERIZED CHAIN FORMATION, Surface science, 333, 1995, pp. 1015-1021

Authors: WEITERING HH DINARDO NJ PEREZSANDOZ R CHEN J MELE EJ
Citation: Hh. Weitering et al., STRUCTURAL MODEL FOR THE METAL-INDUCED SI(111)3X1 RECONSTRUCTION, Physical review. B, Condensed matter, 49(23), 1994, pp. 16837-16840

Authors: WEITERING HH CHEN J PEREZSANDOZ R DINARDO NJ
Citation: Hh. Weitering et al., ELECTRON LOCALIZATION AND THE NONMETAL-TO-METAL TRANSITION AT ULTRATHIN ALKALI-METAL SI(111) INTERFACES/, Surface science, 309, 1994, pp. 978-983

Authors: WEITERING HH SULLIVAN JP CAROLISSEN RJ GRAHAM WR TUNG RT
Citation: Hh. Weitering et al., ELECTRICAL CHARACTERISTICS OF SILVER SILICON CONTACTS, Applied surface science, 70-1, 1993, pp. 422-427

Authors: WEITERING HH CHEN J DINARDO NJ PLUMMER EW
Citation: Hh. Weitering et al., ELECTRON CORRELATION, METALLIZATION, AND FERMI-LEVEL PINNING AT ULTRATHIN K SI(111) INTERFACES/, Physical review. B, Condensed matter, 48(11), 1993, pp. 8119-8135
Risultati: 1-16 |