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Results: 1-11 |
Results: 11
SILC-RELATED EFFECTS IN FLASH (EPROM)-P-2S - PART I - A QUANTITATIVE MODEL FOR STEADY-STATE SILC
Authors: DEBLAUWE J VANHOUDT J WELLEKENS D GROESENEKEN G MAES HE
Citation: J. Deblauwe et al., SILC-RELATED EFFECTS IN FLASH (EPROM)-P-2S - PART I - A QUANTITATIVE MODEL FOR STEADY-STATE SILC, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1745-1750
SILC-RELATED EFFECTS IN FLASH (EPROM)-P-2S - PART II - PREDICTION OF STEADY-STATE SILC-RELATED DISTURB CHARACTERISTICS
Authors: DEBLAUWE J VANHOUDT J WELLEKENS D GROESENEKEN G MAES HE
Citation: J. Deblauwe et al., SILC-RELATED EFFECTS IN FLASH (EPROM)-P-2S - PART II - PREDICTION OF STEADY-STATE SILC-RELATED DISTURB CHARACTERISTICS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1751-1760
READ-DISTURB AND ENDURANCE OF SSI-FLASH E(2)PROM DEVICES AT HIGH OPERATING TEMPERATURES
Authors: DEBLAUWE J WELLEKENS D GROESENEKEN G HASPESLAGH L VANHOUDT J DEFERM L MAES HE
Citation: J. Deblauwe et al., READ-DISTURB AND ENDURANCE OF SSI-FLASH E(2)PROM DEVICES AT HIGH OPERATING TEMPERATURES, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2466-2474
VOLTAGE VARIANT SOURCE SIDE INJECTION FOR MULTILEVEL CHARGE STORAGE IN FLASH EEPROM
Authors: MONTANARI D VANHOUDT J WELLEKENS D VANHOREBEEK G HASPESLAGH L DEFERM L GROESENEKEN G MAES HE
Citation: D. Montanari et al., VOLTAGE VARIANT SOURCE SIDE INJECTION FOR MULTILEVEL CHARGE STORAGE IN FLASH EEPROM, IEEE transactions on components, packaging, and manufacturing technology. Part A, 20(2), 1997, pp. 196-202
IMPACT OF TUNNEL-OXIDE NITRIDATION ON ENDURANCE AND READ-DISTURB CHARACTERISTICS OF FLASH E(2)PROM DEVICES
Authors: DEBLAUWE J WELLEKENS D VANHOUDT J DEGRAEVE R HASPESLAGH L GROESENEKEN G MAES HE
Citation: J. Deblauwe et al., IMPACT OF TUNNEL-OXIDE NITRIDATION ON ENDURANCE AND READ-DISTURB CHARACTERISTICS OF FLASH E(2)PROM DEVICES, Microelectronic engineering, 36(1-4), 1997, pp. 301-304
WRITE ERASE DEGRADATION AND DISTURB EFFECTS IN SOURCE-SIDE INJECTION FLASH EEPROM DEVICES
Authors: WELLEKENS D VANHOUDT J GROESENEKEN G MAES HE FARAONE L
Citation: D. Wellekens et al., WRITE ERASE DEGRADATION AND DISTURB EFFECTS IN SOURCE-SIDE INJECTION FLASH EEPROM DEVICES, Quality and reliability engineering international, 11(4), 1995, pp. 239-246
INVESTIGATION OF THE SOFT-WRITE MECHANISM IN SOURCE-SIDE INJECTION FLASH EEPROM DEVICES
Authors: VANHOUDT JF WELLEKENS D GROESENEKEN G MAES HE
Citation: Jf. Vanhoudt et al., INVESTIGATION OF THE SOFT-WRITE MECHANISM IN SOURCE-SIDE INJECTION FLASH EEPROM DEVICES, IEEE electron device letters, 16(5), 1995, pp. 181-183
WRITE ERASE DEGRADATION IN-SOURCE SIDE INJECTION FLASH EEPROMS - CHARACTERIZATION TECHNIQUES AND WEAROUT MECHANISMS
Authors: WELLEKENS D VANHOUDT J FARAONE L GROESENEKEN G MAES HE
Citation: D. Wellekens et al., WRITE ERASE DEGRADATION IN-SOURCE SIDE INJECTION FLASH EEPROMS - CHARACTERIZATION TECHNIQUES AND WEAROUT MECHANISMS, I.E.E.E. transactions on electron devices, 42(11), 1995, pp. 1992-1998
A 5 V-COMPATIBLE FLASH EEPROM CELL WITH MICROSECOND PROGRAMMING TIME FOR EMBEDDED MEMORY APPLICATIONS
Authors: VANHOUDT J WELLEKENS D FARAONE L HASPESLAGH L DEFERM L GROESENEKEN G MAES HE
Citation: J. Vanhoudt et al., A 5 V-COMPATIBLE FLASH EEPROM CELL WITH MICROSECOND PROGRAMMING TIME FOR EMBEDDED MEMORY APPLICATIONS, IEEE transactions on components, packaging, and manufacturing technology. Part A, 17(3), 1994, pp. 380-389
SINGLE POLY CELL AS THE BEST CHOICE FOR RADIATION-HARD FLOATING-GATE EEPROM TECHNOLOGY
Authors: WELLEKENS D GROESENEKEN G VANHOUDT J MAES HE
Citation: D. Wellekens et al., SINGLE POLY CELL AS THE BEST CHOICE FOR RADIATION-HARD FLOATING-GATE EEPROM TECHNOLOGY, IEEE transactions on nuclear science, 40(6), 1993, pp. 1619-1627
HIMOS - A HIGH EFFICENCY FLASH E(2)PROM CELL FOR EMBEDDED MEMORY APPLICATIONS
Authors: VANHOUDT J HASPESLAGH L WELLEKENS D DEFERM L GROESENEKEN G MAES HE
Citation: J. Vanhoudt et al., HIMOS - A HIGH EFFICENCY FLASH E(2)PROM CELL FOR EMBEDDED MEMORY APPLICATIONS, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2255-2263
Risultati: 1-11 |