Citation: Tks. Wong et al., PATTERNING OF POLY(3-ALKYLTHIOPHENE) THIN-FILMS BY DIRECT-WRITE ULTRAVIOLET-LASER LITHOGRAPHY, Materials science & engineering. B, Solid-state materials for advanced technology, 55(1-2), 1998, pp. 71-78
Authors:
LEE S
LEE P
ZHANG GX
FENG ZP
GRIBKOV VA
LIU M
SERBAN A
WONG TKS
Citation: S. Lee et al., HIGH REP RATE HIGH-PERFORMANCE PLASMA-FOCUS AS A POWERFUL RADIATION SOURCE, IEEE transactions on plasma science, 26(4), 1998, pp. 1119-1126
Citation: Wk. Man et al., GRAIN-SIZE AND HILLOCK GROWTH OF VACUUM-EVAPORATED SNO2 THIN-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1593-1597
Citation: Tks. Wong et Wk. Man, SCANNING PROBE MICROSCOPY AND TUNNELING MEASUREMENTS OF POLYCRYSTALLINE TIN OXIDE-FILMS, Thin solid films, 287(1-2), 1996, pp. 45-50
Citation: Cc. Hsu et al., SPIRAL GROWTH OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 2115-2117
Citation: Tks. Wong et Ih. Wilson, SURFACE-MORPHOLOGY OF ARSENIC IMPLANTED SILICON DIOXIDE OBSERVED BY ATOMIC-FORCE MICROSCOPY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 91(1-4), 1994, pp. 639-643
Citation: Cc. Hsu et al., SURFACE-MORPHOLOGY OF METALORGANIC VAPOR-PHASE EPITAXY-GROWN INP OBSERVED BY ATOMIC-FORCE MICROSCOPY, Journal of crystal growth, 133(1-2), 1993, pp. 185-188
Citation: Cc. Hsu et al., SURFACE-MORPHOLOGY OF METALORGANIC VAPOR-PHASE EPITAXY-GROWN GAAS OBSERVED BY ATOMIC-FORCE MICROSCOPY, Applied physics letters, 63(13), 1993, pp. 1839-1841