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Results:
1-13
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Results: 13
Authors:
WONGLEUNG J
WILLIAMS JS
PETRAVIC M
Citation: J. Wongleung et al., THE INFLUENCE OF CAVITIES AND POINT-DEFECTS ON BORON-DIFFUSION IN SILICON, Applied physics letters, 72(19), 1998, pp. 2418-2420
Authors:
WILLIAMS JS
CONWAY M
DAVIES JA
PETRAVIC M
TAN HH
WONGLEUNG J
Citation: Js. Williams et al., ANALYSIS OF SEMICONDUCTORS BY ION CHANNELING - APPLICATIONS AND PITFALLS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 453-459
Authors:
WONGLEUNG J
EAGLESHAM DJ
SAPJETA J
JACOBSON DC
POATE JM
WILLIAMS JS
Citation: J. Wongleung et al., THE PRECIPITATION OF FE AT THE SI-SIO2 INTERFACE, Journal of applied physics, 83(1), 1998, pp. 580-584
Authors:
KINOMURA A
WILLIAMS JS
WONGLEUNG J
PETRAVIC M
NAKANO Y
HAYASHI Y
Citation: A. Kinomura et al., EFFICIENT GETTERING OF LOW CONCENTRATIONS OF COPPER CONTAMINATION TO HYDROGEN-INDUCED NANOCAVITIES IN SILICON, Applied physics letters, 73(18), 1998, pp. 2639-2641
Authors:
FATIMA S
WONGLEUNG J
GERALD JF
JAGADISH C
Citation: S. Fatima et al., ELECTRICAL CHARACTERIZATION OF THE THRESHOLD FLUENCE FOR EXTENDED DEFECT FORMATION IN P-TYPE SILICON IMPLANTED WITH MEV SI IONS, Applied physics letters, 72(23), 1998, pp. 3044-3046
Authors:
KINOMURA A
WILLIAMS JS
WONGLEUNG J
PETRAVIC M
Citation: A. Kinomura et al., MICROSTRUCTURAL DIFFERENCE BETWEEN PLATINUM AND SILVER TRAPPED IN HYDROGEN-INDUCED CAVITIES IN SILICON, Applied physics letters, 72(21), 1998, pp. 2713-2715
Authors:
KINOMURA A
WILLIAMS JS
WONGLEUNG J
PETRAVIC M
Citation: A. Kinomura et al., GETTERING OF PLATINUM AND SILVER TO CAVITIES FORMED BY HYDROGEN IMPLANTATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 297-300
Authors:
WONGLEUNG J
WILLIAMS JS
Citation: J. Wongleung et Js. Williams, RUTHERFORD BACKSCATTERING AND CHANNELING STUDY OF AU TRAPPED AT CAVITIES IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 34-38
Authors:
WONGLEUNG J
WILLIAMS JS
ELLIMAN RG
NYGREN E
EAGLESHAM DJ
JACOBSON DC
POATE JM
Citation: J. Wongleung et al., PROXIMITY GETTERING OF AU TO ION-BEAM-INDUCED DEFECTS IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 253-256
Authors:
WONGLEUNG J
WILLIAMS JS
NYGREN E
Citation: J. Wongleung et al., DIFFUSION AND TRAPPING OF AU TO CAVITIES INDUCED BY H-IMPLANTATION INSI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 424-428
Authors:
WONGLEUNG J
NYGREN E
WILLIAMS JS
Citation: J. Wongleung et al., GETTERING OF AU TO DISLOCATIONS AND CAVITIES IN SILICON, Applied physics letters, 67(3), 1995, pp. 416-418
Authors:
MOHADJERI B
WILLIAMS JS
WONGLEUNG J
Citation: B. Mohadjeri et al., GETTERING OF NICKEL TO CAVITIES IN SILICON INTRODUCED BY HYDROGEN IMPLANTATION, Applied physics letters, 66(15), 1995, pp. 1889-1891
Authors:
WONGLEUNG J
ASCHERON CE
PETRAVIC M
ELLIMAN RG
WILLIAMS JS
Citation: J. Wongleung et al., GETTERING OF COPPER TO HYDROGEN-INDUCED CAVITIES IN SILICON, Applied physics letters, 66(10), 1995, pp. 1231-1233
Risultati:
1-13
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