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Results: 1-20 |
Results: 20

Authors: Wahl, U Vantomme, A Langouche, G Araujo, JP
Citation: U. Wahl et al., Emission channeling studies of implanted Er-167m in InP, NUCL INST B, 175, 2001, pp. 262-267

Authors: Wahl, U Vantomme, A Langouche, G Correia, JG Peralta, L
Citation: U. Wahl et al., Direct evidence for implanted Fe on substitutional Ga sites in GaN, APPL PHYS L, 78(21), 2001, pp. 3217-3219

Authors: Doyle, BP Storbeck, EJ Wahl, U Connell, SH Sellschop, JPF
Citation: Bp. Doyle et al., Study of indium-defect interactions in diamond using two-dimensional conversion-electron emission channelling, J PHYS-COND, 12(1), 2000, pp. 67-78

Authors: Wahl, U
Citation: U. Wahl, Advances in electron emission channeling measurements in semiconductors, HYPER INTER, 129(1-4), 2000, pp. 349-370

Authors: Wahl, U
Citation: U. Wahl, Advances in electron emission channeling measurements in semiconductors, HYPER INTER, 129(1-4), 2000, pp. 349-370

Authors: Correia, JG Araujo, JP Marques, JG Ramos, AR Lourenco, AA Amaral, V Galindo, V Senateur, JP Weiss, F Wahl, U Melo, AA Soares, JC Sousa, JB
Citation: Jg. Correia et al., Electron-gamma perturbed angular correlation studies on high-T-C superconductors, HYPER INTER, 129(1-4), 2000, pp. 461-473

Authors: Correia, JG Araujo, JP Marques, JG Ramos, AR Lourenco, AA Amaral, V Galindo, V Senateur, JP Weiss, F Wahl, U Melo, AA Soares, JC Sousa, JB
Citation: Jg. Correia et al., Electron-gamma perturbed angular correlation studies on high-T-C superconductors, HYPER INTER, 129(1-4), 2000, pp. 461-473

Authors: Wahl, U Vantomme, A Langouche, G Correia, JG
Citation: U. Wahl et al., Lattice location and stability of ion implanted Cu in Si, PHYS REV L, 84(7), 2000, pp. 1495-1498

Authors: Wahl, U Vantomme, A Langouche, G Araujo, JP Peralta, L Correia, JG
Citation: U. Wahl et al., Emission channeling studies of Pr in GaN, J APPL PHYS, 88(3), 2000, pp. 1319-1324

Authors: Wahl, U Vantomme, A Langouche, G Araujo, JP Peralta, L Correia, JG
Citation: U. Wahl et al., Lattice location of implanted Cu in highly doped Si, APPL PHYS L, 77(14), 2000, pp. 2142-2144

Authors: Wahl, U Correia, JG Araujo, JP Vantomme, A Langouche, G
Citation: U. Wahl et al., Er-O clustering and its influence on the lattice sites of Er in Si, PHYSICA B, 274, 1999, pp. 342-345

Authors: Wahl, U Correia, JG Vantomme, A Langouche, G
Citation: U. Wahl et al., Lattice location of implanted Cu in Si, PHYSICA B, 274, 1999, pp. 367-370

Authors: Bharuth-Ram, K Restle, M Hofsass, H Ronning, C Wahl, U
Citation: K. Bharuth-ram et al., Lattice site and diffusion of ion-implanted Li in as-grown and Se-rich ZnSe, PHYSICA B, 274, 1999, pp. 875-878

Authors: Osterkamp, J Wahl, U Schmalfuss, G Haas, W
Citation: J. Osterkamp et al., Host-odour recognition in two tick species is coded in a blend of vertebrate volatiles, J COMP PH A, 185(1), 1999, pp. 59-67

Authors: Bharuth-Ram, K Hofsass, H Restle, M Wahl, U
Citation: K. Bharuth-ram et al., Emission channeling studies of defect annealing in the wide band gap semiconductors ZnTe and ZnSe, NUCL INST B, 156(1-4), 1999, pp. 244-251

Authors: Wahl, U Vantomme, A Langouche, G
Citation: U. Wahl et al., Lattice sites and damage annealing of Er in low-dose implanted GaAs, NUCL INST B, 148(1-4), 1999, pp. 492-496

Authors: Araujo, JP Correia, JG Wahl, U Marques, JG Alves, E Amaral, VS Lourenco, AA Galindo, V von Papen, T Senateur, JP Weiss, F Vantomme, A Langouche, G Melo, AA da Silva, MF Soares, JC Sousa, JB
Citation: Jp. Araujo et al., Stability and diffusion of Hg implanted YBa2Cu3O6+x, NUCL INST B, 148(1-4), 1999, pp. 807-812

Authors: Araujo, JP Correia, JG Wahl, U Marques, JG Alves, E Amaral, VS Lourenco, AA Galindo, V von Papen, T Senateur, JP Weiss, F Vantomme, A Langouche, G Melo, AA da Silva, MF Soares, JC Sousa, JB
Citation: Jp. Araujo et al., Stability studies of Hg implanted YBa2Cu3O6+x, NUCL INST B, 147(1-4), 1999, pp. 244-248

Authors: Vantomme, A Wu, MF Hogg, S Wahl, U Deweerd, W Pattyn, H Langouche, G Jin, S Bender, H
Citation: A. Vantomme et al., Stabilisation and phase transformation of hexagonal rare-earth silicides on Si(111), NUCL INST B, 147(1-4), 1999, pp. 261-266

Authors: Wahl, U Vantomme, A Langouche, G Correia, JG
Citation: U. Wahl et al., The influence of oxygen on the lattice sites of rare earths in silicon, J LUMINESC, 80(1-4), 1998, pp. 303-307
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