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Results: 1-23 |
Results: 23
300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO >= 6 V
Authors: Dvorak, MW Bolognesi, CR Pitts, OJ Watkins, SP
Citation: Mw. Dvorak et al., 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO >= 6 V, IEEE ELEC D, 22(8), 2001, pp. 361-363
In-situ monitoring, structural, and optical properties of ultrathin GaSb/GaAs quantum wells grown by OMVPE
Authors: Pitts, OJ Watkins, SP Wang, CX Stotz, JAH Thewalt, MLW
Citation: Oj. Pitts et al., In-situ monitoring, structural, and optical properties of ultrathin GaSb/GaAs quantum wells grown by OMVPE, J ELEC MAT, 30(11), 2001, pp. 1412-1416
P-type carbon doping of GaSb
Authors: Wiersma, R Stotz, JAH Pitts, OJ Wang, CX Thewalt, MLW Watkins, SP
Citation: R. Wiersma et al., P-type carbon doping of GaSb, J ELEC MAT, 30(11), 2001, pp. 1429-1432
InP/GaAsSb/InP double HBTs: A new alternative for InP-based DHB
Authors: Bolognesi, CR Matine, N Dvorak, MW Yeo, P Xu, XG Watkins, SP
Citation: Cr. Bolognesi et al., InP/GaAsSb/InP double HBTs: A new alternative for InP-based DHB, IEEE DEVICE, 48(11), 2001, pp. 2631-2639
Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb
Authors: Fink, V Chevalier, E Pitts, OJ Dvorak, MW Kavanagh, KL Bolognesi, CR Watkins, SP Hummel, S Moll, N
Citation: V. Fink et al., Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb, APPL PHYS L, 79(15), 2001, pp. 2384-2386
Guidelines for interpretation of electron beam computed tomography calciumscores from the Dallas Heart Disease Prevention Project
Authors: Watkins, SP Andrews, TC
Citation: Sp. Watkins et Tc. Andrews, Guidelines for interpretation of electron beam computed tomography calciumscores from the Dallas Heart Disease Prevention Project, AM J CARD, 87(12), 2001, pp. 1387-1388
Layer perfection in ultrathin InAs quantum wells in GaAs(001)
Authors: Gupta, JA Watkins, SP Crozier, ED Woicik, JC Harrison, DA Jiang, DT Pickering, IJ Karlin, BA
Citation: Ja. Gupta et al., Layer perfection in ultrathin InAs quantum wells in GaAs(001), PHYS REV B, 61(3), 2000, pp. 2073-2084
Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors
Authors: Dvorak, MW Matine, N Bolognesi, CR Xu, XG Watkins, SP
Citation: Mw. Dvorak et al., Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors, J VAC SCI A, 18(2), 2000, pp. 761-764
Heavily carbon-doped GaAsSb grown on InP for HBT applications
Authors: Watkins, SP Pitts, OJ Dale, C Xu, XG Dvorak, MW Matine, N Bolognesi, CR
Citation: Sp. Watkins et al., Heavily carbon-doped GaAsSb grown on InP for HBT applications, J CRYST GR, 221, 2000, pp. 59-65
Infrared single wavelength gas composition monitoring for metalorganic vapour-phase epitaxy
Authors: Watkins, SP Pinnington, T Hu, J Yeo, P Kluth, M Mason, NJ Nicholas, RJ Walker, PJ
Citation: Sp. Watkins et al., Infrared single wavelength gas composition monitoring for metalorganic vapour-phase epitaxy, J CRYST GR, 221, 2000, pp. 166-171
Photoreflectance study of phosphorus passivation of GaAs (001)
Authors: Beaudry, R Watkins, SP Xu, XG Yeo, P
Citation: R. Beaudry et al., Photoreflectance study of phosphorus passivation of GaAs (001), J APPL PHYS, 87(11), 2000, pp. 7838-7844
Re: Melanoma in the GI tract
Authors: Newman, JL Hemmings, MB Watkins, SP
Citation: Jl. Newman et al., Re: Melanoma in the GI tract, AM J GASTRO, 95(8), 2000, pp. 2131-2131
Layer perfection in ultrathin MOVPE-grown InAs layers buried in GaAs(001) studied by X-ray standing waves and photoluminescence spectroscopy
Authors: Gupta, JA Woicik, JC Watkins, SP Harrison, DA Crozier, ED Karlin, BA
Citation: Ja. Gupta et al., Layer perfection in ultrathin MOVPE-grown InAs layers buried in GaAs(001) studied by X-ray standing waves and photoluminescence spectroscopy, J SYNCHROTR, 6, 1999, pp. 500-502
Non-blocking collector InP/GaAs0.51Sb0.49/InP double heterojunction bipolar transistors with a staggered lineup base-collector junction
Authors: Bolognesi, CR Matine, N Dvorak, MW Xu, XG Hu, J Watkins, SP
Citation: Cr. Bolognesi et al., Non-blocking collector InP/GaAs0.51Sb0.49/InP double heterojunction bipolar transistors with a staggered lineup base-collector junction, IEEE ELEC D, 20(4), 1999, pp. 155-157
Magnetophotoluminescence of D- singlet and triplet states in GaAs
Authors: Harrison, DA Stotz, JAH Karasyuk, VA Watkins, SP Thewalt, MLW Beckett, DJS Thorpe, AJS
Citation: Da. Harrison et al., Magnetophotoluminescence of D- singlet and triplet states in GaAs, PHYS REV B, 60(23), 1999, pp. 15527-15530
InP/GaAs0.51Sb0.49/InP fully self-aligned double heterojunction bipolar transistors with a C-doped base: preliminary reliability study
Authors: Bolognesi, CR Matine, N Xu, XG Soerensen, G Watkins, SP
Citation: Cr. Bolognesi et al., InP/GaAs0.51Sb0.49/InP fully self-aligned double heterojunction bipolar transistors with a C-doped base: preliminary reliability study, MICROEL REL, 39(12), 1999, pp. 1833-1838
Electrical stress damage reversal in nonpassivated fully self-aligned InPHBTs by ozone surface treatment
Authors: Matine, N Soerensen, G Bolognesi, CR DiSanto, D Xu, X Watkins, SP
Citation: N. Matine et al., Electrical stress damage reversal in nonpassivated fully self-aligned InPHBTs by ozone surface treatment, ELECTR LETT, 35(25), 1999, pp. 2229-2231
Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors
Authors: Xu, XG Hu, J Watkins, SP Matine, N Dvorak, MW Bolognesi, CR
Citation: Xg. Xu et al., Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors, APPL PHYS L, 74(7), 1999, pp. 976-978
An X-ray standing wave study of ultrathin InAs films in GaAs(001) grown byatomic layer epitaxy
Authors: Gupta, JA Woicik, JC Watkins, SP Miyano, KE Pellegrino, JG Crozier, ED
Citation: Ja. Gupta et al., An X-ray standing wave study of ultrathin InAs films in GaAs(001) grown byatomic layer epitaxy, J CRYST GR, 195(1-4), 1998, pp. 34-40
MOVPE growth of single monolayers of InAs in GaAs studied by time-resolvedreflectance difference spectroscopy
Authors: Gupta, JA Watkins, SP Ares, R Soerensen, G
Citation: Ja. Gupta et al., MOVPE growth of single monolayers of InAs in GaAs studied by time-resolvedreflectance difference spectroscopy, J CRYST GR, 195(1-4), 1998, pp. 205-210
Time-resolved reflectance difference spectroscopy of InAs growth under alternating flow conditions
Authors: Ares, R Hu, J Yeo, P Watkins, SP
Citation: R. Ares et al., Time-resolved reflectance difference spectroscopy of InAs growth under alternating flow conditions, J CRYST GR, 195(1-4), 1998, pp. 234-241
Comparison of single- and double-barrier pseudomorphic InGaP/InGaAs HFETs
Authors: Xu, XG McLaughlin, S Hu, J Watkins, SP Bolognesi, CR
Citation: Xg. Xu et al., Comparison of single- and double-barrier pseudomorphic InGaP/InGaAs HFETs, J CRYST GR, 195(1-4), 1998, pp. 687-693
Bond-length strain in buried Ga1-xInxAs thin-alloy films grown coherently on InP(001)
Authors: Woicik, JC Gupta, JA Watkins, SP Crozier, ED
Citation: Jc. Woicik et al., Bond-length strain in buried Ga1-xInxAs thin-alloy films grown coherently on InP(001), APPL PHYS L, 73(9), 1998, pp. 1269-1271
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