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Results:
1-7
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Results: 7
Authors:
Xin, HP
Welty, RJ
Hong, YG
Tu, CW
Citation: Hp. Xin et al., Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes, J CRYST GR, 227, 2001, pp. 558-561
GaN0.011P0.989-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates
Authors:
Xin, HP
Welty, RJ
Tu, CW
Citation: Hp. Xin et al., GaN0.011P0.989-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates, IEEE PHOTON, 12(8), 2000, pp. 960-962
Authors:
Mochizuki, K
Welty, RJ
Asbeck, PM
Lutz, CR
Welser, RE
Whitney, SJ
Pan, NR
Citation: K. Mochizuki et al., GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): Optimization of fabrication process and epitaxial layer structure for high-efficiency high-power amplifiers, IEEE DEVICE, 47(12), 2000, pp. 2277-2283
Authors:
Mochizuki, K
Welty, RJ
Asbeck, PM
Citation: K. Mochizuki et al., GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors with zero-offset and low-knee-voltage characteristics, ELECTR LETT, 36(3), 2000, pp. 264-265
Authors:
Xin, HP
Welty, RJ
Tu, CW
Citation: Hp. Xin et al., GaN0.011P0.989 red light-emitting diodes directly grown on GaP substrates, APPL PHYS L, 77(13), 2000, pp. 1946-1948
Authors:
Chen, PF
Hsin, YMT
Welty, RJ
Asbeck, PM
Pierson, RL
Zampardi, PJ
Ho, WJ
Ho, MCV
Chang, MF
Citation: Pf. Chen et al., Application of GaInP/GaAs DHBT's to power amplifiers for wireless communications, IEEE MICR T, 47(8), 1999, pp. 1433-1438
Authors:
Dang, XZ
Welty, RJ
Qiao, D
Asbeck, PM
Lau, SS
Yu, ET
Boutros, KS
Redwing, JM
Citation: Xz. Dang et al., Fabrication and characterisation of enhanced barrier AlGaN/GaN HFET, ELECTR LETT, 35(7), 1999, pp. 602-603
Risultati:
1-7
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